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| SI5904DC Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) () 0.075 @ VGS = 4.5 V 0.134 @ VGS = 2.5 V ID (A) 4.2 3.1 D1 D2 1206-8 ChipFETt 1 S1 D1 D1 D2 D2 G1 S2 G2 G1 Marking Code CB XX Lot Traceability and Date Code S1 N-Channel MOSFET G2 Bottom View Part # Code S2 N-Channel MOSFET Ordering Information: SI5904DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 20 12 4.2 3.0 10 1.8 2.1 1.1 Steady State Unit V 3.1 2.2 0.9 1.1 0.6 --55 to 150 260 _C W A THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 60 110 40 Unit _C/W C/ Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71065 S-21251--Rev. B, 05-Aug-02 www.vishay.com 2-1 SI5904DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 3.1 A VGS = 2.5 V, ID = 2.3 A VDS = 10 V, ID = 3.1 A IS = 0.9 A, VGS = 0 V 10 0.065 0.115 8 0.8 1.2 0.075 0.143 0.6 100 1 5 V nA mA A S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.9 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 ID 1 A, VGEN = 4.5 V, RG = 6 VDS = 10 V, VGS = 4.5 V, ID = 3.1 A 4 0.6 1.3 12 35 19 9 40 18 55 30 15 80 ns 6 nC Notes a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 5 thru 3 V 8 I D -- Drain Current (A) 2.5 V I D -- Drain Current (A) 8 10 TC = --55_C 25_C Transfer Characteristics 6 6 125_C 4 2V 2 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) www.vishay.com 2-2 Document Number: 71065 S-21251--Rev. B, 05-Aug-02 SI5904DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.30 r DS(on) -- On-Resistance ( ) 0.25 0.20 0.15 0.10 0.05 0.00 0 2 4 6 8 10 C -- Capacitance (pF) 600 500 400 300 200 100 0 0 Crss 4 8 12 16 20 Coss Ciss Capacitance VGS = 2.5 V VGS = 4.5 V ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V) Gate Charge 5 V GS -- Gate-to-Source Voltage (V) VDS = 10 V ID = 3.1 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.1 A 1.4 3 r DS(on) -- On-Resistance () (Normalized) 2 3 4 1.2 2 1.0 1 0.8 0 0 1 Qg -- Total Gate Charge (nC) 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.20 On-Resistance vs. Gate-to-Source Voltage r DS(on) -- On-Resistance ( ) I S -- Source Current (A) 0.15 ID = 3.1 A 0.10 TJ = 150_C TJ = 25_C 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Document Number: 71065 S-21251--Rev. B, 05-Aug-02 www.vishay.com 2-3 SI5904DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 50 Single Pulse Power 0.2 V GS(th) Variance (V) 40 ID = 250 mA Power (W) 30 --0.0 --0.2 20 --0.4 10 --0.6 --50 --25 0 25 50 75 100 125 150 0 10 --4 10 --3 10 --2 10 --1 Time (sec) 1 10 100 600 TJ -- Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 1000 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 2-4 Document Number: 71065 S-21251--Rev. B, 05-Aug-02 |
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