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| Composite Transistors XN121M NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 5 0.650.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 4 0.95 3 2 0.3 -0.05 0.40.2 0.16 -0.06 +0.1 1.1 -0.1 q UN221M x 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 100 300 150 -55 to +150 Unit V V mA mW C C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.1 0.1 to 0.3 4 : Emitter 5 : Base (Tr1) EIAJ : SC-74A Mini Type Pakage (5-pin) Marking Symbol: EM Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large) VCE(sat) VOH VOL R1 R1/R2 fT VCB = 10V, IE = -2mA, f = 200MHz Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k -30% 2.2 0.047 150 MHz 4.9 0.2 +30% 80 0.5 0.99 0.06 0.25 V V V k min 50 50 0.1 0.5 0.2 typ max Unit V V A A mA +0.1 1.450.1 s Features 1 Composite Transistors PT -- Ta 500 XN121M Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) IC -- VCE 240 10 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 500 hFE -- IC VCE=10V 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.003 0.001 25C 200 Collector current IC (mA) IB=1.0mA 0.9mA 0.8mA 0.7mA Forward current transfer ratio hFE 400 160 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 300 Ta=75C 25C 200 -25C 120 80 -25C 40 0.1mA 100 0 0 2 4 6 8 10 12 0 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 5 104 IO -- VIN f=1MHz IE=0 Ta=25C VO=5V Ta=25C VIN -- IO 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 4 Output current IO (A) Input voltage VIN (V) 103 10 3 1 0.3 0.1 0.03 3 102 2 101 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 2 |
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