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| 2SD1471 Silicon NPN Planar, Darlington Application High gain amplifier Outline UPAK 1 3 2 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 1 3 2SD1471 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 40 30 10 300 500 1 150 -55 to +150 Unit V V V mA mA W C C Notes: 1. Pulse 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 40 30 10 -- -- 1 Typ -- -- -- -- -- -- -- -- -- -- Max -- -- -- 1 10 100000 -- -- 1.5 2.0 Unit V V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 30 V, IE = 0 VCE = 24 V, RBE = VCE = 5 V, IC = 10 mA*2 VCE = 5 V, IC = 100 mA*2 VCE = 5 V, IC = 400 mA*2 I C = 100 mA, IB = 0.1 mA*2 I C = 100 mA, IB = 0.1 mA*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE1* hFE2* 1 hFE3* 1 Collector to emitter saturation voltage Base to emitter saturation voltage VCE(sat) VBE(sat) 2000 3000 3000 -- -- V V Notes: 1. The 2SD1471 is grouped by h FE as follows. 2. Pulse test Mark hFE1 hFE2 hFE3 DT ET 2000 to 100000 5000 to 100000 3000 min 3000 min 10000 min 10000 min 2 2SD1471 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) (on the alumina ceramic board) Collector Current IC (A) Area of Safe Operation 1.0 0.3 0.1 0.03 0.01 0.003 0.001 0 100 150 50 Ambient Temperature Ta (C) 3 100 300 10 30 Collector to Emitter Voltage VCE (V) iC(peak) PW 1m s 1 s =1 s 0m 0.8 Ta = 25C 1 Shot Pulse 0.4 Typical Output Characteristics Ta = 25C 20 18 16 14 12 10 8 6 4 2 IB = 0 A 2 4 6 8 10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio hFE (x103) 0.5 PC = 1W DC Current Transfer Ratio vs. Collector Current 300 VCE = 3 V Pulse Collector Current IC (A) 0.4 100 0.3 30 Ta = 75C 0.2 25 -25 10 0.1 0 3 10 30 100 300 Collector Current IC (mA) 1,000 3 2SD1471 Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Saturation Voltage vs. Collector Current 10 3 VBE(sat) 1.0 VCE(sat) 0.3 Ta = 25C IC /IB = 1,000 0.1 10 30 100 300 Collector Current IC (mA) 1,000 Transient Thermal Resistance 300 Thermal Resistance j-a (C/W) 100 30 10 3 1.0 0.3 1m Ta = 25C On The Alumina Ceramic Board (12.5x30x0.7 mm) 10 m 100 m 1 Time t (s) 10 100 1,000 4 Unit: mm 4.5 0.1 0.4 1.8 Max 1 1.5 0.1 0.44 Max (2.5) (1.5) 1.5 1.5 3.0 0.8 Min 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.4) 0.53 Max 0.48 Max 2.5 0.1 4.25 Max UPAK -- Conforms 0.050 g (0.2) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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