View IRF7811APBF_541798.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 95264A
IRF7811APBF
Applications High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l 100% RG Tested l Lead-Free
l
S S
HEXFET(R) Power MOSFET
VDSS
28V
RDS(on) max
12m
Qg
17nC
1
8 7
A A D D D D
2
Benefits
l l l
S G
3
6
Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current
4
5
Top View
SO-8
Absolute Maximum Ratings
Symbol
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation
Max
11f 9.1 91 2.5 1.6 0.02 12 -55 to + 150 300 (1.6mm from case)
Units
A
f f
c
f
W W/C V C
Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Smoldering Temperature, for 10 seconds
Thermal Resistance
Symbol
RJL RJA
g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ
--- ---
Max
20 50
Units
C/W
Notes through are on page 10
www.irf.com
1
1/11/05
IRF7811APBF
Static @ TJ = 25C (unless otherwise specified)
Symbol
BV DSS V DSS/T J RDS(on) VGS(th) V GS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd ) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
28 --- --- --- 1.0 --- --- --- --- --- 28 --- --- --- --- --- --- --- 0.9 --- --- --- --- --- --- --- --- 0.025 8.7 10 --- -4.0 --- --- --- --- --- 17 3.3 1.3 4.7 7.2 6.0 24 --- 7.5 4.1 19 6.5 1760 960 54 --- --- 10 12 3.0 --- 1.0 150 100 -100 --- 26 --- --- --- --- --- --- 3.7 --- --- --- --- --- --- --- pF VGS = 0V VDS = 15V = 1.0MHz ns nC nC VDS = 15V VGS = 4.5V ID = 9.0A See Fig. 16 nA S V mV/C A V
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 11A
V/C Reference to 25C, I D = 1mA m VGS = 4.5V, ID = 9.0A
f f
VDS = VGS , ID = 250A VDS = 28V, V GS = 0V VDS = 24V, V GS = 0V, T J = 100C VGS = 12V VGS = -12V VDS = 15V, I D = 9.0A
VDS = 16V, V GS = 0V VDD = 15V, V GS = 4.5V ID = 9.0A Clamped Inductive Load
f
Avalanche Characteristics
Symbol
EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current
d
Typ. --- ---
Max. 58 9.0
Units mJ A
Diode Characteristics
Symbol
IS ISM VSD trr Qrr trr Qrr
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- --- --- 0.8 0.66 72 93 73 100 11 A 91 1.0 --- 110 140 110 150 V ns nC ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 9.0A, V GS = 0Ve TJ = 125C, IS = 9.0A, V GS = 0Ve TJ = 25C, IF = 9.0A, V R = 15V di/dt = 100A/s di/dt = 100A/s
e e
TJ = 125C, IF = 9.0A, V R = 15V
2
www.irf.com
IRF7811APBF
100
TOP 10V 4.5V 3.5V 2.7V 2.5V 2.0V 1.8V BOTTOM 1.5V
VGS
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
VGS 10V 4.5V 3.5V 2.7V 2.5V 2.0V 1.8V BOTTOM 1.5V
TOP
1
1
0.1
1.5V
1.5V
0.01 0.1 1
20s PULSE WIDTH Tj = 25C
10 100
0.1 0.1 1
20s PULSE WIDTH Tj = 150C
10 100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
2.0
RDS(on) , Drain-to-Source On Resistance
ID = 11A VGS = 10V
ID, Drain-to-Source Current ()
T J = 150C
10.00
1.5
1.00
T J = 25C
0.10
(Normalized)
1.0
0.01 1.4 1.8 2.2
VDS = 15V 20s PULSE WIDTH
2.6 3.0 3.4
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRF7811APBF
100000
12
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, Cds SHORTED gs Crss = C gd Coss = Cds + Cgd
ID= 9.0A 10 8 6 4 2 0
VDS=1 5V
10000
C, Capacitance (pF)
Ciss
1000
Coss
100
Crss
10 1 10 100
0
10
20
30
40
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100.0
1000 OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
10.0 T J = 150C
ID, Drain-to-Source Current (A)
100
10
100sec 1msec
T J = 25C 1.0
1 Tc = 25C Tj = 150C Single Pulse 0 1 10
10msec
VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-toDrain Voltage (V)
0.1
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRF7811APBF
12
VDS
10
RD
VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
ID , Drain Current (A)
D.U.T.
+
8
-V DD
6
4
Fig 10a. Switching Time Test Circuit
2
VDS
0 25 50 75 100 125 150
90%
T J , Junction Temperature (C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100
10
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7811APBF
RDS (on) , Drain-to-Source On Resistance ( )
0.013
R DS(on) , Drain-to -Source On Resistance ( )
0.03
0.011 VGS = 4.5V
0.02
0.009 VGS = 10V 0.007
ID = 9.0A
0.01
0.005 0 10 20 30 40 50 60 ID , Drain Current (A)
0.00 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
EAS, Single Pulse Avalanche Energy (mJ)
D.U.T. VGS
3mA
+ V - DS
140
TOP
120 100 80 60 40 20 0
BOTTOM
ID 4.0A 7.2A 9.0A
IG
ID
Current Sampling Resistors
Fig 14. Basic Gate Charge Test Circuit
15V
V(BR)DSS tp
VDS L
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
25
A
50
75
100
125
150
I AS
tp
0.01
Starting TJ , Junction Temperature (C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
www.irf.com
IRF7811APBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id Vds Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Waveform
www.irf.com
7
IRF7811APBF
Power MOSFET Selection for Non-Isolated DC/DC Converters
Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Power losses in the control switch Q1 are given by; Synchronous FET The power loss equation for Q2 is approximated by;
* Ploss = Pconduction + P + Poutput drive
Ploss = Irms x Rds(on)
+ ( g x Vg x f ) Q
(
2
)
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
This can be expanded and approximated by;
Q + oss x Vin x f + (Qrr x Vin x f ) 2
*dissipated primarily in Q1. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs' susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on.
Ploss = (Irms 2 x Rds(on ) ) Qgs 2 Qgd +I x x Vin x f + I x x Vin x f ig ig + (Qg x Vg x f ) + Qoss x Vin x f 2
This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Q gs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by the power supply input buss voltage.
Figure A: Qoss Characteristic
8
www.irf.com
IRF7811APBF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
8 6 E 1
7
6
5 H 0.25 [.010] A
c D E e e1 H K L y
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 B ASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y
K x 45
8X L 7
8X c
NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050]
F OOTPRINT 8X 0.72 [.028]
6.46 [.255]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER
INT ERNAT IONAL RECT IFIER LOGO
XXXX F7101
www.irf.com
9
IRF7811APBF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board R is measured at TJ approximately at 90C
Starting TJ = 25C, L = 1.4mH
RG = 25, I AS = 9.0A.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/05
10
www.irf.com

▲Up To Search▲

Price & Availability of IRF7811APBF

	To Download IRF7811APBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .