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| IGBT Preliminary Data Sheet IXGH 20N120 VCES IXGT 20N120 IC25 VCE(sat) tfi(typ) = 1200 V = 40 A = 2.5 V = 380 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 47 Clamped inductive load TC = 25C Maximum Ratings 1200 1200 20 30 40 20 80 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 260 W C C C C C Features V V V V A A A A G E C (TAB) G DS TO-247 (IXGH) TO-268 (IXGT) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering Md Weight Mounting torque (TO-247) TO-247 TO-268 *International standard packages 1.13/10 Nm/lb.in. 6 5 g g JEDEC TO-247 and TO-268 *High current handling capability *MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVCES VGE(th) ICES IC = 1 mA, VGE = 0 V IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Min. 1200 2.5 TJ = 25C TJ = 125C Characteristic Values Typ. Max. V 5.0 250 1 100 2.0 2.5 V A mA nA V * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode power supplies * Capacitor discharge Advantages * Easy to mount with one screw * Reduces assembly time and cost * High power density (c) 2002 IXYS All rights reserved DS98966 (11/02) IXGH 20N120 IXGT 20N120 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies Coes Cres IC(ON) Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-247 0.25 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 47 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 47 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES VGE = 10V, VCE = 10V VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % 1750 90 31 90 63 13 26 28 20 400 380 6.5 30 27 0.90 700 550 9.5 0.83 800 700 10.5 pF pF pF A nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 Characteristic Values Min. Typ. Max. 12 16 S TO-247 TO-247 Outline TO-268 Outline Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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