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| Advance Product Information August 29, 2000 20 - 40 GHz IQ Mixer * * * * * TGC1430H Key Features and Performance 0.25um pHEMT Technology 20 - 40 GHz RF/LO Frequencies DC - 1GHz IF -11 +/- 1dB Conversion Gain 15 dBm Input Drive Primary Applications Chip Dimensions 1.50 mm x 2.0 mm * * * Point-to-Point Radio Point-to-Multipoint Communications Image Reject Mixers 0 -5 Conversion Gain (dB) -10 -15 -20 -25 -30 18 20 22 24 26 28 30 32 34 36 38 40 LO Frequency (GHz) +100MHz -500MHz -100MHz +750MHz +250MHz -750MHz -250MHz +1GHz +500MHz -1GHz Conversion Gain (dB) 0 -5 -10 -15 -20 -25 -30 18 20 22 24 26 28 30 32 34 36 38 40 LO Frequency (GHz) +100MHz -500MHz -100MHz +750MHz +250MHz -750MHz -250MHz +1GHz +500MHz -1GHz Conversion Gain vs IF Frequency (LO Input @ +15dBm) In-Phase IF Port Conversion Gain vs IF Frequency (LO Input @ +15dBm) Quadrature IF Port Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information August 29, 2000 TGC1430H IF RF LO IF TGC1430G - Recommended Assembly Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information August 29, 2000 TGC1430H Assembly Process Notes Reflow process assembly notes: *= *= *= *= *= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com |
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