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| CE CHENYI ELECTRONICS FEATURES . In MiniMELF case especiaily for automated insertion The zener voltage are graded according to the intermational E24 standed. Smaller voltage tolerances and higher zener voltage on request ZMM1 THRU ZMM200 0.5W SILICON PLANAR ZENER DIODES MECHANICAL DATA . Case: Mini-MELF(SOD-80) glass case . weight: Approx. 0.05 gram ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25 Symbols Zener current see table "Characteristics" Power dissipation at TA=25 Junction temperature Storage temperature range Value ) Units Ptot TJ TSTG 500 175 1) mW -55 to +175 1)Valid provided that a distance of 8mm from case are kept at ambient temperature ELECTRCAL CHARACTERISTICS(TA=25 Symbols Thermal resistance junction to ambient ) Min Typ Max 300 1) Units K/W R JA 1) Valid provided that a distance at 8mm from case are kept at ambient temperature Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 8 CE CHENYI ELECTRONICS Zener Voltage range 1) ZMM1 THRU ZMM200 0.5W SILICON PLANAR ZENER DIODES ZMM1 THRU ZMM200 SILICON PLANAR ZENER DIODES Dynamic resistance 1) Maximum reverse Leakage Current of zener voltage Type ZMM1 3) ZMM2.0 ZMM2.4 ZMM2.7 ZMM3.0 ZMM3.3 ZMM3.6 ZMM3.9 ZMM4.3 ZMM4.7 ZMM5.1 ZMM5.6 ZMM6.2 ZMM6.8 ZMM7.5 ZMM8.2 ZMM9.1 ZMM10 ZMM11 ZMM12 ZMM13 ZMM15 ZMM16 ZMM18 ZMM20 ZMM22 ZMM24 ZMM27 ZMM30 ZMM33 ZMM36 ZMM39 ZMM43 ZMM47 ZMM51 ZMM56 ZMM62 ZMM68 ZMM75 ZMM82 ZMM91 ZMM100 ZMM110 ZMM120 ZMM130 ZMM150 ZMM160 ZMM180 ZMM200 Vznom v 0.75 2.0 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 3) IZT mA V 0.7...0.8 1.9...2.1 2.28...2.56 2.5...2.9 2.8...3.2 3.1...3.5 3.4...3.8 3.7...4.1 4.0...4.6 4.4...5.0 4.8...5.4 5.2...6.0 5.8...6.6 6.4...7.2 7.0...7.9 7.7...8.7 8.5...9.6 9.4...10.6 10.4...11.6 11.4...12.7 12.4...14.1 13.8...15.6 15.3...17.1 16.8...19.1 18.8...21.2 20.8...23.3 22.8...25.6 25.1...28.9 28...32 31...35 34...38 37...41 40...46 44...50 48...54 52...60 58...66 64...72 70...79. 77...87 85...96 94...106 104...116 114...127. 124...141 138...156 153...171 168...191 188...212 <8 rZjt and rZjk at IZK mA <50 A -<100 <50 <10 <4 <2 <2 <2 <1 <0.5 <550 <450 <200 <150 <50 <70 <70 <90 <110 <110 <170 <170 1 IR and IR at VR A -<200 <100 <50 2) TKVZ V -%/K -0.26...-0.23 -0.09...-0.06 -0.09...-0.06 -0.09...-0.06 -0.08...-0.05 -0.08...-0.05 -0.08...-0.05 -0.08...-0.05 -0.06...-0.03 -0.05...+0.05 -0.02...+0.02 -0.05...+0.05 0.03...0.06 0.03...0.07 0.03...0.08 0.03...0.09 0.03...0.1 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 <85 <600 <40 1 5 <75 <60 <35 <25 <10 <8 <7 <7 <10 <15 <20 <20 <26 <30 <40 <50 <55 <55 <20 <10 <2 <220 <80 <0.1 <90 <110 <125 <135 <150 <200 <250 <300 <450 <450 <600 <800 <950 <1250 <1400 <1700 <2000 <500 <600 <700 <5 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 0.04...0.12 2.5 <1000 <1500 <2000 <5000 <5500 <6000 <6500 <7000 <8500 <10000 0.25 <10 1 0.1 0.05...0.12 1) Tested with pluse tp=20ms 2) Valid provided that electrodes are kept at amibent temperature 3) The ZMM1 is a silicon diode with operation in forward direction. Hence,the index of all parameters should be "F" instead of "Z", Connect the cathode to the negative pole. Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 8 CE CHENYI ELECTRONICS ZMM1 THRU ZMM200 0.5W SILICON PLANAR ZENER DIODES ZMM1...ZMM200 SILICON PLANER ZENER DIODES BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT (PULSED) BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT (PULSED) Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 3 of 8 CE CHENYI ELECTRONICS ZMM1 THRU ZMM200 0.5W SILICON PLANAR ZENER DIODES ZMM1...ZMM200 SILICON PLANER ZENER DIODES BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT (PULSED) Admissible power dissipation Forward Characteristics versus ambient temperature Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 4 of 8 CE CHENYI ELECTRONICS ZMM1 THRU ZMM200 0.5W SILICON PLANAR ZENER DIODES ZMM1...ZMM200 SILICON PLANER ZENER DIODES Pulse thermal resistance versus pulse duration Dynamic resistance versus Zener current Capacitance versus Zener voltage Dynamic resistance versus Zener current Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 5 of 8 CE CHENYI ELECTRONICS ZMM1 THRU ZMM200 0.5W SILICON PLANAR ZENER DIODES ZMM1...ZMM200 SILICON PLANER ZENER DIODES Dynamic resistance versus Zener current Thermal differential resistance versus Zener voltage Dynamic resistance versus Zener voltage Temperature dependence of Zener voltage versus voltage Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 6 of 8 CE CHENYI ELECTRONICS ZMM1 THRU ZMM200 0.5W SILICON PLANAR ZENER DIODES ZMM1...ZMM200 SILICON PLANER ZENER DIODES Temperature dependence of Zener voltage versus voltage Thermal differential resistance versus Zener voltage Dynamic resistance versus Zener voltage Temperature dependence of Zener voltage versus voltage Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 7 of 8 CE CHENYI ELECTRONICS ZMM1 THRU ZMM200 0.5W SILICON PLANAR ZENER DIODES ZMM1...ZMM200 SILICON PLANER ZENER DIODES Temperature dependence of Zener voltage versus voltage Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 8 of 8 |
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