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Datasheet File OCR Text: |
SHINDENGEN General Purpose Rectifiers SMT Bridges D1UB80 800V 1A OUTLINE DIMENSIONS Case : SOP-4 Unit : m RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 800 V IO Average Rectified Forward Current50Hz sine wave, R-load, Ta=25*Z 1 A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25A 30 *Z 2 Current Squared Time I2t 1ms*...t*10ms Tj=25 *Z As 3 *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage VF I =0.4A, Pulse measurement, Rating of per diode Max.0.95 V F Pulse measurement, Rating of per diode Reverse Current I R Max.10 EA R V =800v, Thermal Resistance AEjl junction to lead *@ Without heatsink Max.25 *Z/W AEja junction to ambient Without heatsink Max.62.5 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D1UB80 Forward Voltage 10 Forward Current IF [A] Tl=150C [TYP] Tl=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D1UB80 2.5 Forward Power Dissipation Forward Power Dissipation PF [W] SIN 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 Average Rectified Forward Current IO [A] Tj = 150C Sine wave D1UB80 1.6 Derating Curve Average Rectified Forward Current IO [A] 1.4 1.2 SIN 1 0.8 0.6 0.4 0.2 0 Alumina substrate 50.8mm 2 Soldering land 1mm Conductor layer 20m Substrate thickness 0.64mm 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = VRM 0 0 IO VR tp D=tp /T T D1UB80 1.6 Derating Curve Average Rectified Forward Current IO [A] 1.4 1.2 SIN 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Lead Temperature Tl [C] VR = VRM 0 0 IO VR tp D=tp /T T D1UB80 40 Peak Surge Forward Capability IFSM 35 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 30 non-repetitive, sine wave, Tj=25C before surge current is applied 25 20 15 10 5 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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