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| MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje is no limit is e: Th tric Notice parame Som P MIN RELI ARY FS10UMA-5A FS10UMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING 10.5MAX. Dimensions in mm 4.5 3.2 7.0 1.3 16 3.6 12.5MIN. 3.8MAX. 1.0 0.8 2.54 2.54 0.5 2.6 GATE DRAIN SOURCE DRAIN q 10V DRIVE q VDSS ............................................................................... 250V q rDS (ON) (MAX) .............................................................. 0.52 q ID......................................................................................... 10A TO-220 APPLICATION CS Switch for CRT Display monitor MAXIMUM RATINGS (Tc = 25C) Symbol VDSS VGSS ID IDM IDA PD Tch Tstg -- Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 250 20 10 30 10 65 -55 ~ +150 -55 ~ +150 2.0 Unit V V A A A W C C g Jan. 2000 L = 200H 4.5MAX. MITSUBISHI Nch POWER MOSFET IMIN PREL . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY FS10UMA-5A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 250 -- -- 2.0 -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.40 2.00 9.0 950 90 25 20 25 150 40 1.5 -- Max. -- 0.1 1 4.0 0.52 2.60 -- -- -- -- -- -- -- -- 2.0 1.92 Unit V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50 -- -- -- -- -- IS = 5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 MAXIMUM SAFE OPERATING AREA 7 5 POWER DISSIPATION PD (W) 80 DRAIN CURRENT ID (A) 3 2 101 7 5 3 2 tw = 10s 100s 60 40 100 7 5 3 2 1ms 20 TC = 25C Single Pulse 23 5 7 101 23 5 7 102 DC 0 10-1 0 50 100 150 200 7 23 5 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V 7V 6V 10V TC = 25C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V 10V 6V 7V PD = 65W 4.5V 5V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) 8 12 5V 6 8 PD = 65W 4 TC = 25C Pulse Test 4V 4 4V 2 0 0 4 8 12 16 20 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan. 2000 MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje is no limit is e: Th tric Notice parame Som P MIN RELI ARY FS10UMA-5A HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 TC = 25C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 TC = 25C Pulse Test DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () 16 0.8 12 ID = 20A 0.6 VGS = 10V 8 0.4 20V 4 10A 5A 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 102 7 5 3 2 FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 16 TC = 25C 101 7 5 3 2 75C 125C 12 8 100 7 5 3 2 VDS = 10V Pulse Test 7 100 2 3 5 7 101 2 3 57 4 0 TC = 25C VDS = 10V Pulse Test 0 4 8 12 16 20 10-1 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 5 3 SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) 2 CAPACITANCE Ciss, Coss, Crss (pF) 103 7 5 3 2 Ciss 102 7 5 3 2 td(off) tf tr td(on) TCh = 25C VDD = 150V VGS = 10V RGEN = RGS = 50 7 100 2 3 5 7 101 2 3 57 102 7 5 3 2 TCh = 25C f = 1MHZ VGS = 0V Coss Crss 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 101 7 5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan. 2000 MITSUBISHI Nch POWER MOSFET IMIN PREL . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY FS10UMA-5A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 VGS = 0V Pulse Test TC = 25C 75C GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) 20 TCh = 25C ID = 10A 16 SOURCE CURRENT IS (A) VDS = 50V 100V 32 12 24 125C 8 150V 16 4 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 1/2ID 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 0 50 100 150 4.0 3.0 100 7 5 3 2 2.0 1.0 10-1 -50 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 1.2 101 7 5 3 D = 1.0 2 0.5 7 0.2 5 3 2 0.01 0.02 0.1 0.05 PDM Single Pulse tw T D= tw T 1.0 0.8 100 0.6 0.4 -50 0 50 100 150 10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan. 2000 CHANNEL TEMPERATURE Tch (C) |
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