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HMC486
v01.0106
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz
1
AMPLIFIERS - CHIP
Typical Applications
The HMC486 is ideal for use as a power amplifier for: * Point-to-Point Radios * Point-to-Multi-Point Radios * Test Equipment & Sensors * Military End-Use * Space
Features
Saturated Output Power: +34 dBm @ 24% PAE Output IP3: +40 dBm Gain: 26 dB DC Supply: +7.0 V @ 1300 mA 50 Ohm Matched Input/Output 2.51 mm x 2.51 mm x 0.1 mm
Functional Diagram
General Description
The HMC486 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 7 to 9 GHz. This amplifier die provides 26 dB of gain, +34 dBm of saturated power and 24% PAE from a +7.0 V supply voltage. Output IP3 is +40 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
Electrical Specifications, TA = +25 C, Vdd = +7V, Idd = 1300 mA*
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) * Adjust Vgg between -2 to 0V to achieve Idd= 1300 mA typical. 30 22 Min. Typ. 7-8 25 0.04 11 8 33 33.5 40 6.5 1300 30.5 0.06 23 Max. Min. Typ. 8-9 26 0.04 12 6 33.5 34 38 7 1300 0.06 Max. Units GHz dB dB/ C dB dB dBm dBm dBm dB mA
1 - 130
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC486
v01.0106
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz
Broadband Gain & Return Loss
30 25 20 RESPONSE (dB) 15
Gain vs. Temperature
34 32 30 28 26 GAIN (dB) 24 22 20 18 16 14 12 10
+25C +85C -55C
1
AMPLIFIERS - CHIP
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10 5 0 -5 -10 -15 4 5 6 7
S21 S11 S22
8
9
10
11
6
6.5
7
7.5
8
8.5
9
9.5
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
+25C +85C -55C
-2 RETURN LOSS (dB) -5
+25C +85C -55C
RETURN LOSS (dB) 9 9.5 10
-4
-6
-10
-8
-15 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz)
-10 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz)
P1dB vs. Temperature
36 35 34 33 P1dB (dBm) 32 31 30 29 28 27 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz)
+25C +85C -55C
Psat vs. Temperature
36 35 34 33 Psat (dBm) 32 31 30 29 28 27 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz)
+25C +85C -55C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC486
v01.0106
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz
1
AMPLIFIERS - CHIP
Output IP3 vs. Temperature
46 44 42 40 OIP3 (dBm) 38 36 34 32 30 28 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz)
+25C +85C -55C
Power Compression @ 8 GHz
36 Pout (dBm), GAIN (dB), PAE (%) 32 28 24 20 16 12 8 4 0 -10 -8
Pout (dBm) Gain (dB) PAE (%)
-6
-4
-2
0
2
4
6
8
10
12 14
16
INPUT POWER (dBm)
Gain, Power & OIP3 vs. Supply Voltage @ 8 GHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 42 40 38 36 34 32 30 28 26 24 22 6.5 7 Vdd Supply Voltage (Vdc) 7.5
Gain P1dB Psat OIP3
Gain, Power & OIP3 vs. Supply Current @ 8 GHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 42 40 38 36 34 32 30 28 26 24 22 700 800 900 1000 1100 1200 1300
Gain P1dB Psat OIP3
Idd Supply Current (mA)
Noise Figure vs. Temperature
12 11 10 NOISE FIGURE (dB) 9 8 7 6 5 4 3 2 1 0 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz)
+25C +85C -55C
Reverse Isolation vs. Temperature
0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz)
+25C +85C -55C
1 - 132
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC486
v01.0106
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +8 Vdc -2.0 to 0 Vdc +15 dBm 175 C 9.45 W 9.5 C/W -65 to +150 C -55 to +85 C Class 1A Gate Bias Voltage (Vgg) RF Input Power (RFin)(Vdd = +7.0 Vdc) Channel Temperature
Power Dissipation
10.5 10 9.5 9 8.5 8 7.5 7 -10 -8 8 GHz Max Pdiss @ +85C
1
AMPLIFIERS - CHIP
1 - 133
POWER DISSIPATION (W)
Continuous Pdiss (T= 85 C) (derate 105 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature
-6 -4 -2 0 2 4 6 8 10 12 14 16 18
ESD Sensitivity (HBM)
INPUT POWER (dBm)
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Vdd
Vdd (V) +6.5 +7.0 +7.5 Idd (mA) 1305 1300 1295
Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1300 mA at +7.0V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC486
v01.0106
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz
1
AMPLIFIERS - CHIP
Outline Drawing
Die Packaging Information [1]
Standard GP-1 Alternate [2]
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND PAD IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE .002
1 - 134
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC486
v01.0106
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz
Pad Descriptions
Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms from 7 - 9 GHz. Interface Schematic
1
Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 F are required.
2 - 4, 6, 7
Vdd 1-5
5
RFOUT
This pad is AC coupled and matched to 50 Ohms from 7 - 9 GHz. Gate control for amplifier. Adjust to achieve Idd of 1300 mA. Please follow "MMIC Amplifier Biasing Procedure" Application Note. External bypass capacitors of 100 pF and 0.1 F are required.
8
Vgg
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
1 - 135
AMPLIFIERS - CHIP
HMC486
v01.0106
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz
1
AMPLIFIERS - CHIP
Assembly Diagram
1 - 136
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC486
v01.0106
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
1
AMPLIFIERS - CHIP
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RF Ground Plane
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup.
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
RF Ground Plane
0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

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