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PC355NT
PC355NT
s Features
1. High current transfer ratio ( CTR : MIN. 600% at I F = 1mA, V CE = 2V) 2. Opaque type, mini-flat package PC355NT ( 1-channel ) 3. Subminirature type ( The volume is smaller than that of our conventional DIP type by as far as 30%) 4. Isolation voltage between input and output PC355NT ***Viso : 3 750V rms 5. Recognized by UL (NO. E64380)
Mini-Flat Package, High Sensitivity Photocoupler
s Outline Dimensions
PC355NT 2.54 0.25 4 355 1 Anode mark 2 0.4 0.1 0.1 0.1 2.6 0.2 1 C0.4 Input side 2 5.3 0.3 3 4.4 0.2 Internal connection diagram 4 3
( Unit : mm )
1 2 3 4
Anode Cathode Emitter Collector
3.6 0.3
0.5 + 0.4 - 0.2 7.0 + 0.2 - 0.7
6
s Package Specifications
Model No. PC355NT Taping specifications Taping reel diameter 178mm (750pcs.)
s Applications
1. Hybrid substrates that require high density mounting. 2. Programmable controllers
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device."
0.2 0.05
PC355NT s Absolute Maximum Ratings
Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation *2 Isolation voltage Operating temperature Storage temperature *3 Soldering temperature Symbol IF I FM VR P V CEO V ECO IC PC P tot V iso T opr T stg T sol
( Ta = 25C )
Rating 50 1 6 70 35 6 80 150 170 3 750 - 30 to + 100 - 40 to + 125 260 Unit mA A V mW V V mA mW mW V rms C C C
Input
Soldering area 0.2mm or more
Output
*1 Pulse width <=100 s, Duty ratio : 0.001 *2 40 to 60% RH, AC for 1 minute *3 For 10 senconds
s Electro-optical Characteristics
Parameter Forward voltage Reverse current Terminal capacitance Collector dark current Collector-emitter breakdown voltage Emitter-collector breakdown voltage Current transfer ratio Collector-emitter saturation voltage Isolation resistance Floating capacitance Rise time Response time Fall time Symbol VF IR Ct ICEO BV CEO BV ECO CTR V CE(sat) R ISO Cf tr tf Conditions IF = 20mA VR = 4V V = 0, f = 1kHz VCE = 10V, I F = 0 IC = 0.1mA, I F = 0 IE = 10 A, I F = 0 IF = 1mA, V CE = 2V IF = 20mA, I C = 1mA DC500V, 40 to 60% RH V = 0, f = 1MHz VCE = 2V, I C = 2mA RL = 100 MIN. 35 6 600 5 x 1010 TYP. 1.2 30 1 600 0.8 1011 0.6 60 53
( Ta = 25C )
MAX. 1.4 10 250 10 - 6 7 500 1.0 1.0 300 250 Unit V A pF A V V % V pF s s
Input
Output
Transfercharacteristics
PC355NT
Fig. 1 Forward Current vs. Ambient Temperature
70 Diode power dissipation P ( mW ) 0 25 50 75 100 125 60 Forward current I F ( mA ) 50 40 30 20 10 0 - 30
Fig. 2 Diode Power Dissipation vs. Ambient Temperature
100
80 70 60
40
20
0 - 30
0
50 55
a
100 ( C)
Ambient temperature T a ( C )
Ambient temperature T
Fig. 3 Collector Power Dissipation vs. Ambient Temperature
200 Collector power dissipation P C ( mW )
Fig. 4 Total Power Dissipation vs. Ambient Temperature
300 ( mW )
tot
250
150
Total power dissipation P 0 25 50 75 100 125
200 170 150
100
100 50
50
0 - 30
0 - 30
0
25
50
100
Ambient temperature Ta ( C)
Ambient temperature T a ( C)
Fig. 5 Peak Forward Current vs. Duty Ratio
10000 5000 Peak forward current I FM ( mA ) 2000 1000 500 200 100 50 20 10 5
5 10
-3 2
Fig. 6 Forward Current vs. Forward Voltage
500 200 Forward current I F ( mA ) 100 50 20 10 5 2 1 T a = 75C 50C 25C 0C - 25C
Pulse width <=100 s T a = 25C
5 10
-2 2
5 10
-1 2
5
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Duty ratio
Forward voltage V F ( V)
PC355NT
Fig. 7 Current Transfer Ratio vs. Forward Current
5000 V CE = 2V Current transfer ratio CTR ( % ) T a = 25C Collector current I C ( mA ) 4000 80 I F = 10mA P C ( MAX. ) 60
Fig. 8 Collector Current vs. Collectoremitter Voltage
100 T a = 25C
5m
A
3000
2000
40
2mA
1000
20
1mA
0 0.1 1 10 100 Forward current I F ( mA )
0 0 1 2 3 4 5 Collector-emitter voltage V CE ( V )
Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature
150 Relative current transfer ratio ( % ) I F = 1mA V CE = 2V
Fig.10 Collector-emitter Saturation Voltage vs. Ambient Temperature
1.6 1.4 Collector-emitter saturation voltage V CE(sat ) ( V) 1.2 1.0 0.8 0.6 0.4 0.2 0 - 30 I F = 20mA I C = 1mA
100
50
0 - 30
0
20
40
60
80
100
0
20
40
60
80
100
Ambient temperature T a ( C )
Ambient temperature T a ( C )
Fig.11 Collector Dark Current vs. Ambient Temperature
10
-5
Fig.12 Responce Time vs. Load Resistance
500 V CE = 2V 200 I C = 2mA T = 25C 100 a Response time ( s ) 50 20 10 5 2 1 0.5 0.2 0.1 ts td tr tf
5
V CE = 10V
Collector dark current I CEO ( A)
10
-6
5
10
-7
5
10
-8
5
10
-9
5
10 10
- 10
5
- 11
- 30
0
20
40
60
a
80 ( C )
100
0.01
0.1
1
L
10 (k )
100
Ambient temperature T
Load resistance R
PC355NT
Fig.13 Collector-emitter Saturation Voltage vs. Forward Current
6.4 T a = 25C Collector-emitter saturation voltage V CE(sat ) ( V) I C = 0.5mA 1mA 3mA 5mA 7mA 3.2 30mA 50mA
Test Circuit For Response Time
VCC Input Input RD RL Output Output 10% 90% td tr ts tf
4.8
1.6
0
0
0.8
1.6
2.4
3.2
4.0
Forward current I F ( mA )
s Temperature Profile of Soldering Reflow
( 1 ) One time soldering reflow is recommended within the condition of temperature and time profile shown below.
30 seconds 230C
200C
180C
1 minute 25C 2 minutes 1.5 minutes 1 minute
( 2 ) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above ( 1 ) . q Please refer to the chapter " Precautions for Use."

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