 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Click Here & Upgrade PDF Complete Documents Expanded Features Unlimited Pages SPICE Device Model SI6433BDQ Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS * P-Channel Vertical DMOS * Macro Model (Subcircuit Model) * Level 3 MOS * Apply for both Linear and Switching Application * Accurate over the -55 to 125C Temperature Range * Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 72565 21-May-04 www.vishay.com 1 Click Here & Upgrade PDF Complete SPICE Device Model SI6433BDQ Vishay Siliconix Documents Expanded Features Unlimited Pages SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current b Symbol Test Conditions Simulated Data Measured Data Unit VGS(th) ID(on) b VDS = VGS, ID = -250 A VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -4.8 A VGS = -2.5 V, ID = -3.6 A VDS = -5 V, ID = -4.8 A IS = -1.35 A, VGS = 0 V 1.2 75 0.031 0.050 13 -0.79 0.032 0.053 14 -0.77 V A S V Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage b b rDS(on) gfs VSD Dynamic a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = -6 V, RL = 6 ID -1 A, VGEN = -4.5 V, RG = 6 VDS = -6 V, VGS = -4.5 V, ID = -4.8 A 8.7 1.8 3 43 26 67 18 10 1.8 3 45 60 70 35 ns nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2%. www.vishay.com 2 Document Number: 72565 21-May-04 Click Here & Upgrade PDF Complete Documents Expanded Features Unlimited Pages SPICE Device Model SI6433BDQ Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25C UNLESS OTHERWISE NOTED) Document Number: 72565 21-May-04 www.vishay.com 3 |
Price & Availability of SI6433BDQ
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |