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| BAT85 Schottky Diodes DO-35 min. 1.083 (27.5) FEATURES For general purpose applications. This diode features low turn-on voltmax. .079 (2.0) max. .150 (3.8) age. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. with type designation BAS85. Cathode Mark min. 1.083 (27.5) This diode is also available in the MiniMELF case max. .020 (0.52) MECHANICAL DATA Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Continuous Reverse Voltage Forward Continuous Current at Tamb = 25 C Peak Forward Current at Tamb = 25 C Surge Forward Current at tp < 1 s, Tamb = 25 C Power Dissipation at Tamb = 65 C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 1) Value 30 2001) 3001) 6001) 2001) 125 -65 to +125 -65 to +150 Unit V mA mA mA mW C C C VR IF IFM IFSM Ptot Tj Tamb TS Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature. 4/98 BAT85 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Reverse Breakdown Voltage tested with 10 A Pulses Forward Voltage Pulse Test tp < 300 s, < 2% at IF = 0.1 mA at IF = 1 mA at IF = 10 mA at IF = 30 mA at IF = 100 mA Leakage Current at VR = 25 V Capacitance at VR = 1 V, f = 1 MHz Thermal Resistance Junction to Ambient Air Reverse Recovery Time from IF = 10 mA to IR = 10 mA to IR = 1 mA 1) Min. 30 Typ. - Max. - Unit V V(BR)R VF VF VF VF VF IR Ctot RthJA trr - - - - - - - - - - - - 0.5 - - - - - 0.24 0.32 0.4 - 0.8 2 10 0.431) 5 V V V V V A pF K/mW ns Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature. |
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