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| BC 846W ... BC 850W NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 20.1 0.3 3 200 mW SOT-323 0.01 g 10.1 1.250.1 Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 2 1.3 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) BC 846W Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Peak Emitter current - Emitter-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM - IEM Tj TS 65 V 80 V 6V 2.10.1 Grenzwerte (TA = 25/C) BC 847W BC 850W 45 V 50 V 200 mW ) 100 mA 200 mA 200 mA 200 mA 150/C - 65...+ 150/C 1 BC 848W BC 849W 30 V 30 V 5V Characteristics (Tj = 25/C) Group A DC current gain - Kollektor-Basis-Stromverhaltnis ) VCE = 5 V, IC = 10 :A VCE = 5 V, IC = 2 mA h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz Small signal current gain - Stromverstarkung hfe Input impedance - Eingangs-Impedanz Output admittance - Ausgangs-Leitwert Reverse voltage transfer ratio Spannungsruckwirkung 1 Kennwerte (Tj = 25/C) Group B typ. 150 200...450 typ. 330 3.2...8.5 kS 30 < 60 :S typ. 2 *10-4 Group C typ. 270 420...800 typ. 600 6...15 kS 60 < 110 :S typ. 3 *10-4 2 hFE hFE typ. 90 110...220 typ. 220 1.6...4.5 kS 18 < 30 :S typ.1.5 *10-4 hie hoe hre ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 12 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. Collector saturation volt. - Kollektor-Sattigungsspannung 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter voltage - Basis-Emitter-Spannung ) VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 30 V IE = 0, VCB = 30 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 5 V, IC = 200 :A RG = 2 kS, f = 1 kHz, )f = 200 Hz VCE = 5 V, IC = 200 :A RG = 2 kS, f = 1 kHz, f = 30 ... 15000 Hz BC 846W... F BC 848W BC 849W... F BC 850W BC 849W BC 850W F F - - RthA - fT CCB0 CEB0 100 MHz - - IEB0 - ICB0 ICB0 - - VBEon VBEon 580 mV - 1 BC 846W ... BC 850W Kennwerte (Tj = 25/C) Typ. 90 mV 200 mV 700 mV 900 mV 660 mV - - - - Max. 250 mV 600 mV - - 700 mV 770 mV 15 nA 5 :A 100 nA - VCEsat VCEsat 1 - - - - Base saturation voltage - Basis-Sattigungsspannung ) VBEsat VBEsat Collector-Base Capacitance - Kollektor-Basis-Kapazitat 3.5 pF 9 pF 6 pF - Emitter-Base Capacitance - Emitter-Basis-Kapazitat 2 dB 1.2 dB 1.4 dB 1.4 dB 10 dB 4 dB 4 dB 4 dB 620 K/W 2) Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren BC 846AW = 1A Marking of available current gain groups per type Stempelung der lieferbaren Stromverstarkungsgruppen pro Typ BC 847AW = 1E BC 848AW = 1J BC 856W ... BC 860W BC 846BW = 1B BC 847BW = 1F BC 848BW = 1K BC 849BW = 2B BC 850BW = 2F BC 847CW = 1G BC 848CW = 1L BC 849CW = 2C BC 850CW = 2G ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 13 |
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