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| MJ10023 GENERAL DESCRIPTION Silicon NPN Power Darlington Transistor Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. TO-3 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0V TYP Tmb 25 IC = 20A; IB = 1.2A f = 16KHz IF = 20A IC=20A,IB1=1.2A,VCC=250V - MAX 600 400 40 80 250 6.0 5 1.0 UNIT V V A A W V A V s LIMITING VALUES SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V Tmb 25 MIN -55 - MAX 600 400 40 80 20 40 250 150 150 UNIT V V A A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf PARAMETER Collector cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 5MHz Collector capacitance at f = 1MHz Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time CONDITIONS VBE = 0V; VCE = VCEmax VBE = 0V; VCE = VCEmax Tj = 125 IB = 0A; IC = 100mA L = 25mH IC = 20A; IB = 1.2A IC = 20A; IB = 1.2A IC = 10A; VCE = 5V IF = 20A VCB = 10V IC=20A,IB1=1.2A,VCC=250V IC=20A,IB1=1.2A,VCC=250V TYP 300 2.5 MAX 2.0 5.0 UNIT mA mA V 6 3.5 5.0 600 3.0 1.0 V V V MHz pF s s 1.0 0.3 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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