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DATA SHEET
N-CHANNEL GaAs MESFET
NEZ1011-2E, NEZ1414-2E
2W X, Ku-BAND POWER GaAs MESFET
DESCRIPTION
The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability.
FEATURES
* High Output Power : Po (1 dB) = +34.0 dBm typ. * High Linear Gain * High Efficiency : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E) : 30 % typ.
* Input and Output Internally Matched for Optimum performance
ORDERING INFORMATION
Part Number NEZ1011-2E NEZ1414-2E T-78 Package
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NEZ1011-2E, NEZ1414-2E)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Symbol VDS VGS IDS Ratings 15 -7 3.0 (NEZ1011-2E) 2.5 (NEZ1414-2E) +20 -20 15 175 -65 to +175 Unit V V A
Gate Forward Current Gate Reverse Current Total Power Dissipation Channel Temperature Storage Temperature
IGF IGR PT Tch Tstg
mA mA W C C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device.
The information in this document is subject to change without notice.
Document No. P13725EJ1V0DS00 (1st edition) Date Published September 1998 N CP(K) Printed in Japan
(c)
1998
NEZ1011-2E, NEZ1414-2E
RECOMMENDED OPERATING LIMITS
Characteristics Drain to Source Voltage Gain Compression Channel Temperature Gate Resistance
Note
Symbol VDS Gcomp Tch Rg
Test Condition
MIN. 9.0
TYP. 9.0
MAX. 9.0 3 +130
Unit V dB C
200
1000
1000
Note Rg is the series resistance between the gate supply and the FET gate.
[NEZ1011-2E] ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristics Saturated Drain Current Pinch-off Voltage Gate to Drain Breakdown Voltage Thermal Resistance Linear Gain Output Power at 1 dB Gain Comp. Drain Current at 1 dB Gain Comp. Power Added Efficiency at 1 dB Gain Compression Point 3rd Order Intermodulation Distortion Symbol IDSS Vp BVGD Rth GL Po (1 dB) IDS (1 dB) Test Conditions VDS = 1.5 V, VGS = 0 V VDS = 2.5 V, IDS = 10 mA IGD = 10 mA Channel to Case f = 10.7, 11.2, 11.7 GHz VDS = 9.0 V IDS = 0.7 A (RF OFF) Rg = 1 k 8.0 33.0 MIN. 0.7 -2.5 TYP. 1.6 -1.3 15 5.5 8.5 34.0 0.8 30 1.0 7.0 MAX. 2.5 -0.5 Unit A V V C/W dB dBm A %
add (1 dB)
IM3 Pout = +27.5 dBm (2 tone)
-40
dBc
[NEZ1414-2E] ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristics Saturated Drain Current Pinch-off Voltage Gate to Drain Breakdown Voltage Thermal Resistance Linear Gain Output Power at 1 dB Gain Comp. Drain Current at 1 dB Gain Comp. Power Added Efficiency at 1 dB Gain Compression Point Symbol IDSS Vp BVGD Rth GL Po (1 dB) IDS (1 dB) Test Conditions VDS = 1.5 V, VGS = 0 V VDS = 2.5 V, IDS = 10 mA IGD = 10 mA Channel to Case f = 14.0 to 14.5 GHz VDS = 9.0 V IDS = 0.7 A (RF OFF) Rg = 1 k 7.0 33.0 MIN. 0.7 -3.0 TYP. 1.6 -1.3 15 5.5 7.5 34.0 0.8 30 1.0 7.0 MAX. 3.0 -0.5 Unit A V V C/W dB dBm A %
add (1 dB)
2
NEZ1011-2E, NEZ1414-2E
[NEZ1011-2E] TYPICAL CHARACTERISTICS (TA = 25C)
OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs. INPUT POWER 80 +35 Pout
70
Pout - Output Power - dBm
60
+30
50
add
40
30 +25 20
10
+20 +20 +25 Pin - Input Power - dBm +30
0 TEST CONDITIONS Vds : 9.0 (V) Ids : 0.7 (A)
add - Efficiency - %
3
NEZ1011-2E, NEZ1414-2E
[NEZ1011-2E] TYPICAL S-PARAMETERS
Vds = 9.0 V, Ids = 0.7 A START 9.5 GHz, STOP 13 GHz, STEP 100 MHz Marker 1: 10.7 GHz 2: 11.7 GHz
S11 1.0 0.5 1 2.0 +135 +45 S12 +90
1 0 2 2 180 0
-0.5 -1.0
-2.0
-135 -90
-45
Rmax = 1
Rmax = 0.25
S21 +90 0.5 +135 1 +45
S22 1.0 2.0
1 180 2 0 0 2
-135 -90
-45 -0.5 -1.0 -2.0
Rmax = 5
Rmax = 1
4
NEZ1011-2E, NEZ1414-2E
[NEZ1011-2E] TYPICAL S-PARAMETERS
MAG. AND ANG. Vds = 9.0 V, Ids = 0.7 A
FREQUENCY GHz MAG. S11 ANG. (deg.) 9.50 9.60 9.70 9.80 9.90 10.0 10.1 10.2 10.3 10.4 10.5 10.6 10.7 10.8 10.9 11.0 11.1 11.2 11.3 11.4 11.5 11.6 11.7 11.8 11.9 12.0 12.1 12.2 12.3 12.4 12.5 12.6 12.7 12.8 12.9 13.0 0.764 0.761 0.758 0.753 0.746 0.736 0.722 0.706 0.686 0.668 0.645 0.624 0.598 0.578 0.554 0.528 0.507 0.478 0.456 0.422 0.394 0.358 0.318 0.279 0.240 0.209 0.200 0.212 0.252 0.309 0.361 0.416 0.469 0.519 0.559 0.597 -167.277 -178.028 171.529 160.103 148.570 136.528 124.575 112.284 100.666 89.224 77.773 67.151 56.412 46.466 36.030 26.451 16.580 6.600 -3.277 -13.834 -24.217 -36.871 -49.672 -65.213 -84.430 -107.600 -138.676 -167.414 166.906 147.122 131.557 118.401 107.640 98.604 89.444 81.722 0.015 0.016 0.016 0.017 0.021 0.024 0.028 0.032 0.035 0.040 0.044 0.050 0.054 0.059 0.062 0.066 0.070 0.074 0.075 0.079 0.084 0.086 0.096 0.096 0.100 0.105 0.097 0.103 0.098 0.095 0.105 0.097 0.102 0.106 0.082 0.088 MAG. S12 ANG. (deg.) -43.230 -65.634 -91.498 -118.516 -141.838 -171.701 167.511 144.823 121.478 105.970 87.091 70.741 54.078 37.806 21.296 6.098 -7.465 -22.940 -35.751 -49.149 -63.862 -77.583 -92.366 -107.789 -123.743 -138.506 -155.009 -170.320 175.893 160.769 143.930 131.537 116.588 99.572 84.259 66.604 2.130 2.340 2.425 2.517 2.750 2.799 2.790 2.912 2.927 2.942 2.970 2.970 2.945 2.944 2.917 2.906 2.920 2.902 2.889 2.933 2.901 2.874 2.890 2.905 2.857 2.845 2.824 2.638 2.617 2.572 2.409 2.256 2.162 2.023 1.844 1.863 MAG. S21 ANG. (deg.) -95.531 -111.739 -123.950 -134.894 -151.673 -167.695 176.393 161.709 146.204 131.119 116.345 101.187 86.551 72.072 57.262 43.390 29.090 14.522 0.451 -14.070 -29.339 -43.606 -56.908 -73.786 -89.725 -105.536 -120.676 -138.590 -153.421 -167.311 174.881 158.493 143.945 130.613 116.717 102.174 0.635 0.611 0.584 0.553 0.516 0.476 0.432 0.388 0.344 0.299 0.260 0.229 0.208 0.200 0.202 0.212 0.222 0.237 0.248 0.256 0.264 0.265 0.262 0.257 0.246 0.233 0.214 0.193 0.174 0.160 0.155 0.163 0.183 0.211 0.246 0.287 MAG. S22 ANG. (deg.) -83.968 -91.286 -98.187 -106.003 -114.652 -123.658 -133.644 -145.015 -157.688 -172.088 171.488 152.876 131.672 109.753 89.248 70.797 54.193 39.808 26.634 14.662 3.065 -8.418 -19.614 -31.209 -43.300 -55.965 -71.338 -87.955 -107.656 -130.767 -155.714 178.469 155.527 135.870 119.252 104.110
5
NEZ1011-2E, NEZ1414-2E
[NEZ1414-2E] TYPICAL CHARACTERISTICS (TA = 25C)
OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs. INPUT POWER 80
+35
Pout
70
Pout - Output Power - dBm
60
+30
50
40
+25
add
30
20
10
+20 +20 +25 Pin - Input Power - dBm +30
0 TEST CONDITIONS Vds : 9.0 (V) Ids : 0.7 (A)
6
add - Efficiency - %
NEZ1011-2E, NEZ1414-2E
[NEZ1414-2E] TYPICAL S-PARAMETERS
Vds = 9.0 V, Ids = 0.7 A START 12.5 GHz, STOP 16 GHz, STEP 100 MHz Marker 1: 14.0 GHz 2: 14.5 GHz
S11 1.0 0.5 2.0 +135 1 2 +45 S12 +90
0
2 1
180
0
-0.5 -1.0
-2.0
-135 -90
-45
Rmax = 1
Rmax = 0.25
S21 +90 0.5 +135 2 1 +45
S22 1.0 2.0
1 180 0 0 2
-135 -90
-45 -0.5 -1.0 -2.0
Rmax = 5
Rmax = 1
7
NEZ1011-2E, NEZ1414-2E
[NEZ1414-2E] TYPICAL S-PARAMETERS
MAG. AND ANG. Vds = 9.0 V, Ids = 0.7 A
FREQUENCY GHz MAG. S11 ANG. (deg.) 12.5 12.6 12.7 12.8 12.9 13.0 13.1 13.2 13.3 13.4 13.5 13.6 13.7 13.8 13.9 14.0 14.1 14.2 14.3 14.4 14.5 14.6 14.7 14.8 14.9 15.0 15.1 15.2 15.3 15.4 15.5 15.6 15.7 15.8 15.9 16.0 0.720 0.714 0.703 0.694 0.681 0.665 0.647 0.619 0.598 0.564 0.528 0.489 0.458 0.417 0.379 0.345 0.316 0.299 0.283 0.286 0.294 0.316 0.341 0.371 0.404 0.434 0.470 0.500 0.535 0.563 0.592 0.614 0.643 0.667 0.693 0.714 54.026 47.272 40.563 33.714 25.911 18.142 10.006 1.522 -7.303 -16.994 -25.513 -35.940 -46.827 -58.735 -71.139 -86.020 -100.664 -117.676 -135.202 -153.247 -171.013 172.686 157.476 143.634 130.878 119.410 107.612 96.950 86.060 75.185 64.542 54.164 43.880 33.519 24.111 14.872 0.041 0.042 0.046 0.054 0.042 0.049 0.048 0.050 0.065 0.066 0.078 0.076 0.094 0.083 0.104 0.098 0.095 0.100 0.094 0.096 0.098 0.099 0.103 0.108 0.107 0.113 0.104 0.102 0.099 0.091 0.093 0.089 0.089 0.085 0.081 0.076 MAG. S12 ANG. (deg.) -23.488 -33.909 -49.053 -67.659 -75.730 -91.627 -106.322 -123.298 -121.906 -147.244 -144.394 -164.810 174.594 160.842 137.769 123.598 110.275 95.196 85.165 73.113 56.700 46.372 29.217 13.049 0.943 -17.401 -31.285 -45.363 -59.856 -74.474 -86.447 -101.479 -115.807 -129.917 -143.437 -159.317 1.670 1.618 1.805 1.905 1.883 2.076 2.139 2.226 2.244 2.269 2.572 2.705 2.394 2.514 2.483 2.337 2.380 2.475 2.473 2.387 2.393 2.363 2.329 2.311 2.279 2.226 2.173 2.138 2.067 2.002 1.930 1.858 1.768 1.668 1.558 1.473 MAG. S21 ANG. (deg.) -12.914 -27.927 -33.613 -41.620 -59.438 -70.774 -85.459 -106.292 -117.709 -129.798 -146.964 -157.354 -172.475 172.741 160.220 143.589 130.321 115.146 100.169 85.738 72.248 58.619 44.378 30.331 15.402 0.717 -13.915 -28.618 -43.793 -58.791 -74.024 -88.826 -104.195 -119.138 -134.157 -148.375 0.559 0.536 0.513 0.489 0.469 0.444 0.423 0.397 0.376 0.354 0.331 0.308 0.291 0.267 0.245 0.222 0.199 0.177 0.155 0.132 0.113 0.092 0.074 0.059 0.048 0.046 0.054 0.068 0.087 0.109 0.134 0.162 0.197 0.231 0.268 0.311 MAG. S22 ANG. (deg.) 139.492 132.577 125.731 118.906 110.831 102.528 94.278 85.041 76.035 66.079 56.921 46.382 35.057 23.990 12.747 0.830 -10.034 -21.527 -33.131 -45.132 -57.855 -72.397 -89.862 -113.198 -143.105 -178.465 147.862 121.138 100.050 81.796 65.785 51.196 38.392 26.433 15.119 5.747
8
NEZ1011-2E, NEZ1414-2E
PACKAGE DIMENSIONS (UNIT: mm)
8.25 0.15 Gate
Source 9.7 0.13 2.74 0.1 R 0.65
Drain 13 0.1 16.5 0.13
1.8 0.1 9 0.3
3.0 0.2 0.2 MAX.
9
NEZ1011-2E, NEZ1414-2E
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method Partial Heating Soldering Conditions Pin temperature: 260C Time: 5 seconds or less (per pin row) Recommended Condition Symbol -
For details of recommended soldering conditions, please contact your local NEC sales office.
10
NEZ1011-2E, NEZ1414-2E
[MEMO]
11
NEZ1011-2E, NEZ1414-2E
Caution
The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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