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Semiconductor
RFL1N12L, RFL1N15L
1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09528.
September 1998
Features
* 1A, 120V and 150V
[ /Title (RFL1N 12L, RFL1N1 5L) /Subject 1A, 20V nd 50V, .900 hm, ogic evel, -Chanel ower OSETs) /Author ) /Keyords Harris emionducor, ogic evel, -Chanel ower OSETs, O05AF)
* rDS(ON) = 1.900
Ordering Information
PART NUMBER RFL1N12L RFL1N15L PACKAGE TO-205AF TO-205AF BRAND RFL1N12L RFL1N15L
NOTE: When ordering, use the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN (CASE) GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
(c) Harris Corporation 1998
File Number
1513.2
7-1
RFL1N12L, RFL1N15L
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFL1N12L Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 1M) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL 120 120 1 5 10 8.33 0.0667 -55 to 150 260 RFL1N15L 150 150 1 5 10 8.33 0.0667 -55 to 150 260 UNITS V V A A V W W/oC
oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0 120 150 VGS(TH) IDSS VGS = VDS, ID = 250A, (Figure 8) VDS = Rated BVDSS VDS = 0.8 x Rated BVDSS, TC = 125oC Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 0V, VDS = 25V, f = 1MHz,(Figure 9) VGS = 10V, VDS = 0 ID = 1A, VGS = 5V, (Figures 6, 7) ID = 1A, VGS = 5V ID 1A, VDD = 75V, RG = 6.25, RL = 75, VGS = 5V, (Figures 10, 11, 12) 1 10 10 24 30 2 1 25 100 1.900 1.9 25 45 45 50 200 80 35 15 V V V A A A V ns ns ns ns pF pF pF
oC/W
Electrical Specifications
PARAMETER
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage RFL1N12L RFL1N15L Gate Threshold Voltage Zero Gate Voltage Drain Current
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulse test: width 300s duty cycle 2%. 3. Repetitive rating: pulse witdh limited by maximum junction temperature. SYMBOL VSD trr ISD = 1A ISD = 1A, dISD/dt = 50A/s TEST CONDITIONS MIN TYP 150 MAX 1.4 UNITS V ns
7-2
RFL1N12L, RFL1N15L Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
1.2 1.0 ID, DRAIN CURRENT (A) 0.8 0.6 0.4 0.2 0 25
1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 TC, CASE TEMPERATURE (oC) 125 150
50
75 100 125 TC, CASE TEMPERATURE (oC)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON)
TC = 25oC
4 VGS = 10V VGS = 5V VGS = 4V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
3
1
2 VGS = 3V 1 PULSE DURATION = 80s DUTY CYCLE 2% TC = 25oC VGS = 2V
0.1 RFL1N12L RFL1N15L
0.01
1
10 100 VDS, DRAIN TO SOURCE (V)
1000
0
1
3 4 5 6 7 8 2 VDS, DRAIN TO SOURCE VOLTAGE (V)
9
10
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
5 ID(ON), ON-STATE DRAIN CURRENT (A)
4
rDS(ON), DRAIN TO SOURCE ON
VDS = 10V PULSE DURATION = 80s DUTY CYCLE 2%
-40oC
-25oC
4
VGS = 5V PULSE DURATION = 80s DUTY CYCLE 2%
125oC
RESISTANCE ()
3 125oC 2 125oC 1 -40oC 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5
3 25oC 2
1 0.5
-40oC
0
1
2 3 ID, DRAIN CURRENT (A)
4
5
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT
7-3
RFL1N12L, RFL1N15L Typical Performance Curves
ID = 1A VGS = 5V VGS(TH), NORMALIZED GATE THRESHOLD VOLTAGE
Unless Otherwise Specified (Continued)
2
NORMALIZED DRAIN TO SOURCE ON RESISTANCE
2
ID = 250A VGS = VDS
1.5
1.5
1
1
0.5
0.5
-50
0
50
100
150
-50
TJ, JUNCTION TEMPERATURE (oC)
0 50 100 TJ, JUNCTION TEMPERATURE (oC)
150
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
240 200 C, CAPACITANCE (pF) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
150 VDS, DRAIN TO SOURCE VOLTAGE (V) VDS RL = 75 IG(REF) = 0.095mA VGS = 5V GATE SOURCE VOLTAGE VDD = BVDSS 4 37.5 0.75VDSS 0.50VDSS 0.25VDSS DRAIN SOURCE VOLTAGE I 20 G(REF) IG(ACT) I 80 G(REF) IG(ACT) 10 VGS, GATE TO SOURCE VOLTAGE (V)
8
112.5
160 120 CISS 80 40 COSS CRSS 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 60
6
75
VDD = BVDSS
2
0 t, TIME (s)
0
NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
tON td(ON) tr RL VDS
+
tOFF td(OFF) tf 90%
90%
RG DUT
-
VDD 0
10% 90%
10%
VGS VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
6-4

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