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 VDSM ITAVM ITRMS ITSM VT0 rT
* * * * *
= = = = = =
6500 V 350 A 550 A 4500 A 1.20 V 2.300 m
Phase Control Thyristor
5STP 03X6500
Doc. No. 5SYA1003-04 Sep. 01
Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate
Blocking
Part Number VDSM VDRM VRSM1 IDSM IRSM dV/dtcrit VRSM VRRM 5STP 03X6500 5STP 03X6200 5STP 03X5800 Conditions 6500 V 5600 V 7000 V 6200 V 5300 V 6700 V 150 mA 150 mA 1000 V/s 5800 V 4900 V 6300 V f = 5 Hz, tp = 10ms f = 50 Hz, tp = 10ms tp = 5ms, single pulse VDSM VRSM Tj = 125C
Exp. to 0.67 x VDRM, Tj = 125C
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110C
Mechanical data
FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 0.4 kg 38 mm 21 mm 10 kN 8 kN 12 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
5STP 03X6500
On-state
ITAVM ITRMS ITSM It
2
Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral
350 A 550 A 4500 A 4850 A
2 2
Half sine wave, TC = 70C tp = tp = 10 ms 8.3 ms 10 ms 8.3 ms 1000 A 300 - 900 A Tj = 125C Tj = 125C After surge: VD = VR = 0V
101 kA s tp = 98 kA s tp =
VT VT0 rT IH IL
On-state voltage Threshold voltage Slope resistance Holding current
3.50 V 1.20 V 2.300 m 30-80 mA 15-60 mA
IT = IT =
Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Latching current
80-500 mA 50-200 mA
Switching
di/dtcrit Critical rate of rise of on-state current 100 A/s 200 A/s Cont. f = 50 Hz VD 0.67VDRM , Tj = 125C 60 sec. f = 50Hz VD = 0.4VDRM ITRM = 1000 A IFG = 2 A, tr = 0.5 s IFG = 2 A, tr = 0.5 s
td tq Qrr
Delay time Turn-off time
min max
3.0 s 700 s
VD 0.67VDRM ITRM = 1000 A, Tj = 125C dvD/dt = 20V/s VR > 200 V, diT/dt = 1 A/s
Recovery charge
900 As 2000 As
Triggering
VGT IGT VGD IGD VFGM IFGM VRGM PG Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Gate power loss 2.6 V 400 mA 0.3 V 10 mA 12 V 10 A 10 V 3W Tj = 25 Tj = 25 VD =0.4 x VDRM VD = 0.4 x VDRM
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Sep. 01 page 2 of 5
5STP 03X6500
Thermal
Tjmax Tstg RthJC Max. operating junction temperature range Storage temperature range Thermal resistance junction to case 125 C -40...140 C 85 K/kW 95 K/kW 45 K/kW RthCH Thermal resistance case to heat sink
Analytical function for transient thermal impedance:
Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled
15 K/kW 7.5 K/kW
ZthJC(t) = a Ri(1 - e -t/ i )
i =1
i Ri(K/kW) i(s) 1 26.07 0.6439 2 12.16 0.0812 3 3.37 0.0161 4 3.1 0.0075 Fig. 1 Transient thermal impedance junction to case.
n
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics. Tj=125C, 10ms half sine
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Sep. 01 page 3 of 5
5STP 03X6500
Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs. mean on-state current.
Fig. 6 Surge on-state current vs. pulse length. Half-sine wave.
Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Sep. 01 page 4 of 5
5STP 03X6500
Fig. 8 Gate trigger characteristics.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of onstate current.
Fig. 11 Peak reverse recovery current vs. decay rate of on-state current.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com
Doc. No. 5SYA1003-04 Sep. 01


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