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| FDY4000CZ Complementary N & P-Channel PowerTrench(R) MOSFET August 2006 FDY4000CZ Complementary N & P-Channel PowerTrench(R) MOSFET Features Q1: N-Channel Max rDS(on) = 0.7 at VGS = 4.5V, ID = 600mA Max rDS(on) = 0.85 at VGS = 2.5V, ID = 500mA Max rDS(on) = 1.25 at VGS = 1.8V, ID =150 mA Q2: P-Channel Level shifting Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers tm General Description This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench(R) process to optimize the rDS(ON) @ VGS= 2.5V and specify the rDS(ON) @ VGS = 1.8V. Applications Max rDS(on) = 1.2 at VGS = -4.5V, ID = -350mA Max rDS(on) = 1.6 at VGS = -2.5V, ID = -300mA Max rDS(on) = 2.7 at VGS = -1.8V, ID = -150mA ESD protection diode (note 3) RoHS Compliant 6 5 4 G2 5 2 G1 S2 4 3 D2 1 2 3 D1 6 1 S1 MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation (Steady State) Operating and Storage Jaunting Temperature Range (Note 1a) (Note 1b) (Note 1a) Q1 20 12 600 1000 625 446 -55 to 150 Q2 -20 8 -350 -1000 Units V V mA mW C Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 200 280 C/W Package Marking and Ordering Information Device Marking E Device FDY4000CZ Package SC89-6 Reel Size 7" Tape Width 8mm Quantity 3000units (c)2006 Fairchild Semiconductor Corporation FDY4000CZ Rev. B 1 www.fairchildsemi.com FDY4000CZ Complementary N & P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage ID = 250A, VGS = 0V ID = -250A, VGS = 0V ID = 250A, referenced to 25C ID = -250A, referenced to 25C VDS = 16V, VDS =0V VDS = -16V, VDS =0V VGS = 12V, VDS = 0V VGS = 4.5V, VDS = 0V VGS = 8V, VDS = 0V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q1 Q2 20 -20 15 -15 1 -3 10 1 10 V mV/C A A On Characteristics (note 2) VGS(th) VGS(th) TJ Gate to Source Threshold Voltage VGS = VDS, ID = 250A VGS = VDS, ID = -250A Q1 Q2 Q1 Q2 Q1 0.6 -0.6 1.0 -1.0 -3 3 0.30 0.40 0.80 0.35 0.5 0.8 1.3 0.7 1.8 1 0.70 0.85 1.25 1.00 1.2 1.6 2.7 1.6 1.5 -1.5 V mV/C Gate to Source Threshold Voltage ID = 250A, referenced to 25C Temperature Coefficient ID = -250A, referenced to 25C VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 150mA, VGS = 4.5V, ID = 600mA,TJ = 125C VGS = -4.5V, ID = --350mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VGS = -4.5V, ID = -350mA, TJ =125C VDS = 5V, ID = 600mA VDS = -5V, ID = -350mA rDS(on) Drain to Source On Resistance Q2 Q1 Q2 gFS Forward Transconductance S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Q1 VDS = 10V, VGS = 0V, f = 1MHz Q2 VDS = -10V, VGS = 0V, f = 1MHz Q1 Q2 Q1 Q2 Q1 Q2 60 100 20 30 10 15 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller"Charge Q1 VDD= 10V, ID = 1A, VGS= 4.5V, Rg = 6 Q2 VDD= -10V, ID = -0.5A, VGS= -4.5V, Rg = 6 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 6 6 8 13 8 8 2.4 1 0.8 1.0 0.16 0.2 0.26 0.3 12 12 16 23 16 16 4.8 2 1.1 1.4 ns ns ns ns nC nC nC Q1 VDS= 10V, ID = 600mA, VGS= 4.5V Q2 VDS= -10V, ID = -350mA, VGS= -4.5V 2 FDY4000CZ Rev. B www.fairchildsemi.com FDY4000CZ Complementary N & P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 150mA (Note 2) VGS = 0V, IS = -150mA (Note 2) Q1 IF = 600mA, di/dt = 100A/s Q2 IF = -350mA, di/dt = 100A/s Q1 Q2 Q1 Q2 Q1 Q2 0.7 -0.8 8 11 1 2 1.2 -1.2 V ns nC Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJCis guaranteed by design while RJA is determined by the user's board design. b) 280C/W when mounted on a minimum pad of 2 oz copper a) 200C/W when mounted on a 1 in2 pad of 2 oz copper Scale 1:1 on letter size paper 2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 3 FDY4000CZ Rev. B www.fairchildsemi.com FDY4000CZ Complementary N & P-Channel PowerTrench(R) MOSFET Typical Characteristics Q1 (N-Channel) 1 3.0V 2.5V 0.6 2.0V R D S (O N ), N O R M A LIZ E D D R A IN -S O U R C E O N -R E S IS T A N C E VGS = 4.5V 3.5V 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 0.2 0.4 0.6 4.5V 2.5V 3.0V 3.5V VGS = 2.0V I D , DRAIN CURRENT (A) 0.8 0.4 0.2 0 0 0.25 0.5 0.75 1 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 1 Figure 1. On-Region Characteristics 1.6 Figure 2. Normalized on-Resistance vs. Drain Current and Gate Voltage 0.9 R DS(ON), ON-RESISTANCE (OHM) ID = 300mA ID, DRAIN CURRENT (A) R D S (O N ), N O R M A LIZE D D R A IN -S O U R C E O N -R E S IS TA N C E 1.4 ID = 600mA VGS = 4.5V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 TA = 125oC 1.2 1 0.8 TA = 25oC 0.6 -50 -25 0 25 50 75 100 o 125 150 1 2 3 4 5 Figure 3. Normalized on-Resistance vs. Temperature 1.5 I S , RE VER SE DR A IN CU R RE NT (A ) 1 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs. Gate-to-Source Voltage VDS = 5V ID , DRAIN CURRENT (A) 1.2 TA = -55 C 125oC o 25oC VGS = 0V 0.1 TA = 125oC 0.01 25oC 0.001 -55oC 0.9 0.6 0.3 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current and Temperature 4 FDY4000CZ Rev. B www.fairchildsemi.com FDY4000CZ Complementary N & P-Channel PowerTrench(R) MOSFET Typical Characteristics Q1 (N-Channel) 5 V GS , GATE-SOURCE VOLTAGE (V) ID = 600mA 4 VDS = 5V 3 10V 2 15V 100 90 80 CAPACITAN C E (pF) 70 60 50 40 30 20 10 Crss 0 4 8 12 16 Coss Ciss f = 1MHz VGS = 0 V 1 0 0 0.2 0.4 0.6 0.8 1 Qg, GATE CHARGE (nC) 0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 10 Figure 8. Capacitance vs. Drain to source voltage 30 P(pk), PEAK TRANSIENT POWER (W) 25 20 15 10 5 0 0.0001 SINGLE PULSE RJA = 280C/W TA = 25C ID , DRAIN CURRENT (A) 1 RDS(ON) LIMIT 1ms 10ms 0.1 VGS = 4.5V SINGLE PULSE o RJA = 280 C/W TA = 25 C o 100ms 10s 1s DC 1 10 100 0.01 0.1 0.001 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D=0.5 0.2 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA =280 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.1 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 5 FDY4000CZ Rev. B www.fairchildsemi.com FDY4000CZ Complementary N & P-Channel PowerTrench(R) MOSFET Typical Characteristics Q2 (P-Channel) 1 VGS= -4.5V 0.8 -4.0V 0.6 -3.0V -2.0V -2.5V 2.6 VGS=-1.8V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -I D, DRAIN CURRENT (A) 2.2 -2.0V 1.8 -2.5V -3.0V -3.5V 0.4 -1.8V 1.4 0.2 1 -4.0V -4.5V 0 0 0.5 1 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 2 0.6 0 0.2 0.4 0.6 -ID, DRAIN CURRENT (A) 0.8 1 Figure 12. On-Region Characteristics 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE Figure 13. Normalized on-Resistance vs. Drain Current and Gate Voltage 2 RDS(ON), ON-RESISTANCE (OHM) ID = -0.175A 1.75 1.5 1.25 1 0.75 TA = 25oC 0.5 0.25 ID = -0.35A VGS = -4.5V 1.4 1.2 1 TA = 125oC 0.8 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 14. Normalized on-Resistance vs. Temperature 1 Figure 15. On-Resistance vs. Gate-to-Source Voltage 1 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V VGS = 0V -ID, DRAIN CURRENT (A) 0.8 0.1 0.6 0.01 TA = 125oC 0.4 TA = 125 C -55oC o 0.2 25oC 0.001 25oC -55oC 0 0.5 0.0001 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 16. Transfer Characteristics Figure 17. Source to Drain Diode Forward Voltage vs. Source Current and Temperature 6 FDY4000CZ Rev. B www.fairchildsemi.com FDY4000CZ Complementary N & P-Channel PowerTrench(R) MOSFET Typical Characteristics Q2 (P-Channel) 10 150 ID = -0.35A 125 CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) f = 1 MHz VGS = 0 V 8 VDS = -5V 6 -15V 100 75 Coss 50 25 Crss 0 Ciss 4 -10V 2 0 0 0.5 1 1.5 Qg, GATE CHARGE (nC) 2 2.5 0 2 4 6 8 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 12 Figure 18. Gate Charge Characteristics Figure 19. Capacitance vs. Drain to source voltage 10 P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE RJA = 280/W TA = 25 10 8 -ID, DRAIN CURRENT (A) 1 100s RDS(ON) LIMIT 1ms 10ms 100ms 1s 6 4 0.1 VGS = -4.5V SINGLE PULSE RJA = 280oC/W TA = 25 C o 10s DC 2 0.01 0.01 0 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 20. Normalized on-Resistance vs. Temperature Figure 21. On-Resistance vs. Gate-to-Source Voltage r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA =280 /W P(pk) t1 t2 TJ - T A = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.1 0.1 0.05 0.02 0.01 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 22. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 7 FDY4000CZ Rev. B www.fairchildsemi.com FDY4000CZ Complementary N & P-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout 1.70 1.50 6 4 0.50 0.30 0.15 0.50 1.20 BSC 1.70 1.55 1.25 1.80 1 (0.20) 3 0.30 0.50 1.00 0.60 0.56 0.18 0.10 0.55 LAND PATTERN RECOMMENDATION SEE DETAIL A 0.35 BSC 0.20 BSC 0.10 0.00 DETAIL A SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. 8 FDY4000CZ Rev. B www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I20 |
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