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| FMA3014 12.7-16GHZ MMIC LIMITING AMPLIFIER FEATURES: * * * * * * * Self-Biased Single Supply 32dB Gain 17dBm Output pHEMT Technology Input Return Loss < -15dB Output Return Loss < -12dB Preliminary Datasheet v2.1 FUNCTIONAL SCHEMATIC: VDD RF Input RF Output GENERAL DESCRIPTION: The FMA3014 is a high performance 12.716GHz Gallium Arsenide monolithic amplifier. It is suitable for use in broadband communication and electronic warfare applications. The FMA3014 is ideally suited as a limiting amplifier where output power is invariant of input power. An example is the reduction of variability of mixer conversion loss to input LO drive level. TYPICAL APPLICATIONS: * * * * Electronic Warfare Broadband Communication Infrastructure Cellular Backhaul Point to Point Radio ELECTRICAL SPECIFICATIONS: PARAMETER Small Signal Gain Input Return Loss Output Return Loss Output Power at 1dB compression point Saturated Output Power Noise Figure Self-bias Current 12.7-16GHz 12.7-16GHz Small signal 15 17 6 100 7 130 dBm dB mA CONDITIONS (VDD=4.5V, ID=100mA) 12.7-16GHz 12.7-16GHz 12.7-16GHz 12.7-16GHz MIN 28 -8 -8 13 TYP 32 -15 -12 15 MAX UNITS dB dB dB dBm Note: TAMBIENT = +25C, Z0 = 50 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3014 Preliminary Datasheet v2.1 ABSOLUTE MAXIMUM RATINGS: PARAMETER Max Input Power Gate Voltage Drain Voltage Operating Temp Storage Temp SYMBOL Pin VG1 VDD Toper Tstor ABSOLUTE MAXIMUM +20dBm Not Required +6V -40C to +85C -55C to +150C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. PAD LAYOUT: B C PAD REF A B C D E F G H I J K L PAD NAME I B D O E F G H J K L M DESCRIPTION PIN COORDINATES (m) (97,1613) (1206,1900) A RF in 1st and 2nd stage drain 3rd and 4th stage drain RF out 4th stage bias adjust Ground for pad E 3rd stage bias adjust Ground for pad G 2nd stage bias adjust Ground for pad I 1st stage bias adjust Ground for pad K D LK (2166,1900) (2904,1202) (2721,754) (2467,754) (1957,754) (1703,754) (1225,754) (1061,754) (636,754) (472,754) JI H G F E Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening. Pads without identifiers are ground connections used in wafer testing. DIE SIZE (m) 3000 x 2000 DIE THICKNESS (m) 100 MIN. BOND PAD PITCH (m) 164um MIN. BOND PAD OPENING (m x m ) 100 x 100 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3014 Preliminary Datasheet v2.1 TYPICAL PERFORMANCE FOR ON WAFER MEASUREMENTS: Note: Measurement Conditions ID= 110mA, VDD= 4.5V, TAMBIENT = 25C Gain 40 Input Return Loss 0 -5 35 Return Loss (dB) 30 Gain (dB) -10 25 -15 20 -20 15 -25 10 10 11 12 13 14 15 16 Frequency (GHz) 17 18 19 20 -30 10 11 12 13 14 15 16 Frequency (GHz) 17 18 19 20 Output Return Loss 0 Reverse Isolation -40 -45 -50 -5 Return Loss (dB) -10 Isolation (dB) 10 11 12 13 14 15 16 Frequency (GHz) 17 18 19 20 -55 -60 -65 -70 -15 -20 -25 -75 -30 -80 10 11 12 13 14 15 16 Frequency (GHz) 17 18 19 20 TYPICAL MEASURED PERFORMANCE FOR 10 SITE ON WAFER POWER TRANSFER CHARACTERISTIC: 25 20 15 10 5 -30 -25 -20 -15 -10 -5 25 20 Pout(dBm 10 5 0 -5 0 -30 -25 -20 Pin (dBm) -15 -10 Pin (dBm ) -10 Note: Measurement conditions: VDD = 4.5V Id=110mA (typ) Note: Measurement conditions: VDD = 6V Id=110mA (typ) 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com P u (d m ot B 15 FMA3014 Preliminary Datasheet v2.1 BIASING CIRCUIT SCHEMATIC: VDD C1 RF input 100pF C2 100nF RF Output Assembly Diagram: C1 100pF Capacitor Note: Bond Wire length should be kept to a minimum BILL OF MATERIALS: LABEL Board C1 C2 COMPONENT All RF tracks should be 50 characteristic material Capacitor, 100pF, chip capacitor Capacitor, 100nF, 0402 4 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3014 Preliminary Datasheet v2.1 EFFECT OF BONDWIRES AND BOND COMPENSATION: A pair of bondwires in the `V' formation shown in the figure above, should if kept reasonably short, yield a combined inter-connect inductance of below 0.25nH. The FMA3014 has excellent return losses (blue triangles) and these are modified by the addition of a 0.25nH bondwire inductance (pink squares) as shown in the figures below. 0 0 . 1 0 . 2 8 . 0 6 . 0 Swp Max 16GHz 4. 0 0 3. 0 4. 2.0 5.0 10 .0 0 . 0 1 2 . 0 4 . 0 6 . 0 8 . 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5 0.0 12 -0. 1.0 6 0. Swp Max 16GHz 2. 0 0.5 0. 40. 30 . 2 8 . 0 0 . 1 - 0.8 S(2,2) 4 . -0 RFOW 0 3. 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 2 -0. -0.8 S(1,1) matched -1.0 S(1,1) with bonds -0 .6 .0 -2 0 -5 -10 -15 -20 -25 -30 -35 -40 12 13 14 Frequency (GHz) 15 16 DB(|S(1,1)|) RFOW DB(|S(1,1)|) with bonds DB(|S(1,1)|) matched Once bonded the return losses are still at a reasonable level. They can be improved with simple compensation networks. The figures also show the effect of this bondwire compensation network (brown diamonds). The networks are shown at the end of this section. Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com -3 .0 S(1,1) .4 -0 RFOW Swp Min 12GHz -10.0 -4 .0 -5.0 0. 4 0 4. 5.0 S(2,2) with bonds 6 . 0 - Swp Min 12GHz 0.2 10.0 S(2,2) matched 0 -5 -10 -15 -20 -25 -30 -35 -40 12 13 14 Frequency (GHz) 15 16 DB(|S(2,2)|) RFOW DB(|S(2,2)|) with bonds DB(|S(2,2)|) matched Input Output Dimensions in mm. Material is 10 thou 4350 Er=3.38 5 Website: www.filtronic.com FMA3014 Preliminary Datasheet v2.1 PREFERRED ASSEMBLY INSTRUCTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260C. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. ORDERING INFORMATION: PART NUMBER FMA3014 (Gel-pak available on request) DESCRIPTION Die in Waffle-pack HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters, noise data and large-signal models are available on request. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com |
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