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| LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon 3 COLLECTOR MMBT6428LT1 MMBT6429LT1 3 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO Value 6428LT1 6429LT1 Unit 50 60 6.0 200 45 55 Vdc Vdc Vdc mAdc CASE 318-08, STYLE 6 SOT-23 (TO-236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ , Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING MMBT6428LT1 = 1KM, MMBT6429LT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) (I C = 1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 0.1mAdc, I E = 0) (I C = 0.1mAdc, I E = 0) Collector Cutoff Current ( V CE = 30Vdc, ) Collector Cutoff Current ( V CB = 30Vdc, I E = 0 ) Emitter Cutoff Current ( V EB = 5.0Vdc, I C= 0) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. I CBO -- I EBO -- 0.01 0.01 Adc MMBT6428 MMBT6429 V (BR)CBO MMBT6428 MMBT6429 I CBO -- 0.1 Adc 60 55 -- -- Adc V (BR)CEO 50 45 -- -- Vdc Vdc M22-1/4 LESHAN RADIO COMPANY, LTD. MMBT6428LT1 MMBT6429LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE MMBT6428 MMBT6429 MMBT6428 MMBT6429 MMBT6428 MMBT6429 MMBT6428 MMBT6429 VCE(sat) -- -- V BE(on) Min Max Unit -- ON CHARACTERISTICS DC Current Gain (I C = 0.01 mAdc, V CE = 5.0 Vdc) (I C = 0.1 mAdc, V CE = 5.0Vdc) (I C = 1.0 mAdc, V CE = 5.0Vdc) (I C = 10 mAdc, V CE = 5.0Vdc) Collector-Emitter Saturation Voltage (I C = 10 mAdc, I B = 0.5 mAdc) (I C = 100 mAdc, I B = 0.5 mAdc) Base-Emitter On Voltage (I C = 1.0 mAdc, V CE = 5.0mAdc) 250 500 250 500 250 500 250 500 -- -- 650 1250 -- -- -- -- Vdc 0.2 0.6 0.66 Vdc 0.56 SMALL-SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product (V CE = 5.0 Vdc, I C = 1.0mAdc, f = 100 MHz) Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB= 0.5 Vdc, I C = 0 , f = 1.0 MHz) fT C obo C ibo 100 -- -- 700 3.0 8.0 MHz pF pF RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model M22-2/4 LESHAN RADIO COMPANY, LTD. MMBT6428LT1 MMBT6429LT1 NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25C) NOISE VOLTAGE 30 30 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz e n , NOISE VOLTAGE (nV) I C = 10 mA R S~0 ~ e n , NOISE VOLTAGE (nV) 20 20 RS~ 0 ~ f = 10 Hz 10 10 3.0 mA 1.0 mA 100 Hz 7.0 5.0 7.0 10 kHz 5.0 1.0 kHz 300 A 3.0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 100 kHz 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 f, FREQUENCY (Hz) I C , COLLECTOR CURRENT (mA) Figure 2. Effects of Frequency 10 7.0 5.0 2.0 Figure 3. Effects of Collector Current BANDWIDTH = 1.0 Hz NF, NOISE FIGURE (dB) I C = 10 mA 3.0 mA 1.0 mA 300 A 100 A 10 A 50 100 200 500 1k 2k I n , NOISE CURRENT (pA) 16 BANDWIDTH = 10 Hz to 15.7 kHz 12 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 8.0 500 A 100 A I C = 1.0 mA 4.0 10 A 30 A 5k 10k 20k 50k 100k 0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS~ 0 ~ 10 20 f, FREQUENCY (Hz) R S , SOURCE RESISTANCE () Figure 4. Noise Current 100 Hz NOISE DATA 300 20 Figure 5. Wideband Noise Figure V T , TOTAL NOISE VOLTAGE (nV) 200 BANDWIDTH = 1.0 Hz 3.0 mA 1.0 mA 300 A I C = 10 mA 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 NF, NOISE FIGURE (dB) 16 I C = 10 mA 3.0 mA 1.0 mA 12 100 A 30 A 10 A 300 A 8.0 100 A 4.0 30 A BANDWIDTH = 1.0 Hz 10 A 0 1k 2k 5k 10k 20k 50k 100k 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k R S , SOURCE RESISTANCE () R S , SOURCE RESISTANCE () Figure 6. Total Noise Voltage Figure 7. Noise Figure M22-3/4 LESHAN RADIO COMPANY, LTD. MMBT6428LT1 MMBT6429LT1 h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 V CE = 5.0 V 2.0 T A = 125C 25C 1.0 -55C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) Figure 8. DC Current Gain R VBE , BASE- EMITTER TEMPERATURE COEFFICIENT (mV/ C) 1.0 -0.4 T J = 25C 0.8 -0.8 V, VOLTAGE (VOLTS) 0.6 V BE @ V CE = 5.0 V -1.2 0.4 -1.6 T J = 25C to 125C 0.2 -2.0 -55C to 25C -2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 V CE(sat) @ I C /I B = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. "On" Voltages 8.0 6.0 Figure 10. Temperature Coefficients f T , CURRENT- GAIN -- BANDWIDTH PRODUCT (MHz) 50 T J = 25C C ob C eb C cb C ib 300 C, CAPACITANCE (pF) 4.0 3.0 200 2.0 100 V CE = 5.0 V 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 0.8 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 T J = 25C V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current-Gain -- Bandwidth Product M22-4/4 |
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