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Absolute Maximum Ratings
Symbol Conditions 1)
VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = -IC IFM = -ICM IFSM I 2t RGE = 20 k Tcase = 25/85 C Tcase = 25/85 C; tp = 1 ms per IGBT, Tcase = 25 C AC, 1 min. DIN 40040 DIN IEC 68 T.1 Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 C tp = 10 ms; Tj = 150 C
Values Units
1200 1200 290 / 200 580 / 400 20 1350 -40 ... +150 (125) 2500 Class F 40/125/56 195 / 130 580 / 400 1450 10 500 V V A A V W C V
SEMITRANS(R) M Low Loss IGBT Modules SKM 200 GB 124 D
Inverse Diode A A A A2s
SEMITRANS 3
Characteristics
Symbol Conditions 1)
V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon Eoff VF = VEC VF = VEC VTO rt IRRM Qrr Rthjc Rthjc Rthch VGE = 0, IC = 4 mA VGE = VCE, IC = 6 mA Tj = 25 C VGE = 0 VCE = VCES Tj = 125 C VGE = 20 V, VCE = 0 IC = 150 A VGE = 15 V; IC = 200 A Tj = 25 (125) C VCE = 20 V, IC = 150 A per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 600 V VGE = -15 V / +15 V3) IC = 150 A, ind. load RGon = RGoff = 7 Tj = 125 C
min.
typ.
- 5,5 0,4 12 - 2,1(2,4) 2,5(3,0) - - 11 1,6 0,8 - 75 50 520 50 21 19 2,0(1,8) 2,25(2,05) 1,1 - 78 19,5 - - -
max.
- 6,5 14 - 0,32 2,45(2,85) - - 700 15 2 1 20 - - - - - - 2,5 - 1,2 7 - - 0,09 0,25 0,038
Units
V V mA mA A V V S pF nF nF nF nH ns ns ns ns mWs mWs V V V m A C C/W C/W C/W
VCES
4,5 - - - - - 62 - - - - - - - - - - - - - - - - - - - -
GB Features * MOS input (voltage controlled) * N channel, homogeneous Silicon structure NPT-IGBT (Non punch through) * Low saturation voltage * Low inductance case * Low tail current with low temperature dependence * High short circuit capability, self limiting to 6 * Icnom * Latch-up free * Fast & soft inverse CAL diodes 8) * Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould * Large clearance (12 mm) and creepage distances (20 mm) Typical Applications B 6 - 161
* Switching (not for linear use) * Inverter drives * UPS
1) 2) 3) 8)
Inverse Diode 8) IF = 150 A VGE = 0 V; IF = 200 A Tj = 25 (125) C Tj = 125 C 2) Tj = 125 C 2) IF = 150 A; Tj = 125 C2) IF = 150 A; Tj = 125 C2) per IGBT per diode per module
Thermal characteristics
Tcase = 25 C, unless otherwise specified IF = - IC, VR = 600 V, -diF/dt = 1500 A/s, VGE = 0 V Use VGEoff = -5... -15 V CAL = Controlled Axial Lifetime Technology
Cases and mech. data B 6 - 162
(c) by SEMIKRON 0898 B 6 - 157
SKM 200 GB 124 D
1400 W 1200 1000 800 600 400 200 Ptot 0 0 TC 20 40 60 80 100 120 140 160 C
M200G124.X LS-1
70 mWs 60 50 40 30 20 10 E 0 0 IC 50 100 150 200 250
M200G124.X LS -2
E on
Tj = 125 C VCE = 600 V VGE = + 15 V RG = 7
E off
300
A
350
Fig. 1 Rated power dissipation Ptot = f (TC)
Fig. 2 Turn-on /-off energy = f (IC)
90 mWs 80 70 60 50 40 30 20
M200G124.X LS-3
1000
M200G124.X LS -4
E on
Tj = 125 C VCE = 600 V VGE = + 15 V IC = 150 A
A
t p=10s
1 pulse TC = 25 C Tj 150 C
100
100s
E off
10
1ms
Not for linear use
10ms 10 E 0 0R G 10 20 30 40 50 60 1 1 VCE 10 100 1000 V 10000 IC
Fig. 3 Turn-on /-off energy = f (RG)
M200G124.X LS -5
Fig. 4 Maximum safe operating area (SOA) IC = f (VCE)
M200G124.X LS -6
2,5
Tj 150 C
VGE = 15 V RGoff = 7 IC = 150 A
12
2
10 di/dt= 1000 A/s 3000 A/s 5000 A/s
8 1,5 6 1 4 0,5 ICpuls/IC 0 0 200 V CE 400 600 800 1000 1200 1400 V
Tj 150 C VGE = 15 V tsc 10 s L < 25 nH IC = 150 A
allowed numbers of short circuits: <1000 time between short circuits: >1s
2 ICSC/IC 0 0 VCE
200
400
600
800
1000 1200 V
1400
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit IC = f (VCE)
B 6 - 158
0898
(c) by SEMIKRON
M2 0 0G1 24 .X LS -8
300 A 250
Tj = 150 C VGE 15V
200
150
100
50 IC
0 0 TC 40 80 120 160 C
Fig. 8 Rated current vs. temperature IC = f (TC)
M2 0 0G1 24 .X LS -9
M 20 0G1 24 .X LS -1 0
300 A 250 17V 15V 13V 11V 9V 7V
300 A 250 17V 15V 13V 11V 9V 7V
200
200
150
150
100
100
50 IC 0 0 V CE 1 2 3 4 V 5
50 IC 0 0 VCE 1 2 3 4 V 5
Fig. 9 Typ. output characteristic, tp = 80 s; 25 C
Fig. 10 Typ. output characteristic, tp = 80 s; 125 C
M200G124.X LS-12
300
Pcond(t) = VCEsat(t) * IC(t) VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) * IC(t)
A 250
200
VCE(TO)(Tj) 1,3 + 0,0005 (Tj -25) [V] typ.: rCE(Tj) = 0,0053 + 0,000017 (Tj -25) [] max.: rCE(Tj) = 0,0077 + 0,000023 (Tj -25) [] +2 valid for VGE = + 15 -1 [V]; IC > 0,3 ICnom
150
100
50 IC 0 0 V GE 2 4 6 8 10 12 V 14
Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations
Fig. 12 Typ. transfer characteristic, tp = 80 s; VCE = 20 V
(c) by SEMIKRON
0898
B 6 - 159
SKM 200 GB 124 D
20 V 18 16 14 12 10 8 6 4 V GE 2 0 0 200 QGate 400 600 800 1000 nC 1200 C 0,1 0 VCE 10 20 V 30 1 Cres Coes 600V 800V Cies 10
M200G124.X LS-13
Rthjc = 0,005 ICpuls = 150 A
100 nF
M200G124.X LS -14
VGE = 0 V f = 1 MHz
Fig. 13 Typ. gate charge characteristic
M200G124.X LS-15
Fig. 14 Typ. capacitances vs.VCE Tj = 125 C VCE = 600 V VGE = 15 V RGon = 7 RGoff = 7 induct. load
M200G124.X LS -16
1000 ns
10000
tdoff
ns tdoff 1000 tdon tr
Tj = 125 C VCE = 600 V VGE = 15 V IC = 150 A induct. load
100
t don 100
tf tr t 10 0 IC 50 100 150 200 250 300 A 350 t
tf
10 0 RG 10 20 30 40 50 60
Fig. 15 Typ. switching times vs. IC
M200GB 124.X LS -17
Fig. 16 Typ. switching times vs. gate resistor RG
M200G124.X LS -18
200 A Tj=125C, typ.
10 mJ 8
RG=
4 6
VCC = 600 V Tj = 125 C VGE = 15 V
150
Tj=25C, typ. Tj=125C, max. 6 10 17 4 40 2
100
Tj=25C, max.
50 E offD 0 0 VF 1 2 V 3 0 0 IF 40 80 120 160 200
IF
240 A
Fig. 17 Typ. CAL diode forward characteristic
Fig. 18 Diode turn-off energy dissipation per pulse
B 6 - 160
0898
(c) by SEMIKRON
1 K/W
M 20 0G1 24 .X LS -1 9
1 K/W
M2 0 0G1 24 .X LS -2 0
0,1
0,1
0,01
0,001 ZthJC 0,0001 0,00001 tp single pulse
D=0,50 0,20 0,10 0,05 0,02 0,01
0,01
0,001 single pulse ZthJC 0,0001 0,00001 tp
D=0,5 0,2 0,1 0,05 0,02 0,01
0,0001
0,001
0,01
0,1 s
1
0,0001
0,001
0,01
0,1 s
1
Fig. 19 Transient thermal impedance of IGBT ZthJC = f (tp); D = tp / tc = tp * f
280 A 240 200 160 120 10 80 40 IRR 0 0 IF 40 80 120 160 200 A 240 17 40 6
M200G124.X LS-22
Fig. 20 Transient thermal impedance of inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp * f
280
M200G124.X LS -23
RG= 4
VCC = 600 V Tj = 125 C VGE = 15 V
A 240 200 160 120 17 80 40 IRR 0 0 1000 diF/dt 2000 3000 40 10
RG= 4
VCC = 600 V Tj = 125 C VGE = 15 V IF = 150 A
6
4000
5000
6000 7000 A/s
Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; RG)
Fig. 23 Typ. CAL diode peak reverse recovery current IRR = f (di/dt)
35
M2 0 0G1 24 .X LS -2 4
Typical Applications include Switched mode power supplies DC servo and robot drives Inverters DC choppers AC motor speed control UPS Uninterruptable power supplies General power switching applications Electronic (also portable) welders
C 30 25 20 15 10 5 Qrr 0 0 diF/dt 2000 4000 40 A 10 17 40 6
RG= 4
IF = 200 A
VCC = 600 V Tj = 125 C VGE = 15 V
150 A 110 A 75 A
6000 A/s
8000
Fig. 24 Typ. CAL diode recovered charge
(c) by SEMIKRON
0898
B 6 - 161
SKM 200 GB 124 D
SEMITRANS 3 Case D 56 UL Recognized File no. E 63 532
SKM 200 GB 124 D
Dimensions in mm Case outline and circuit diagram
Mechanical Data
Symbol Conditions min.
M1 M2 a w to heatsink, SI Units to heatsink, US Units for terminals, SI Units for terminals, US Units (M6) (M6) 3 27 2,5 22 - -
Values typ.
- - - - - -
Units max.
5 44 5 44 5x9,81 325 Nm lb.in. Nm lb.in. m/s2 g
This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. Three devices are supplied in one SEMIBOX A without mounting hardware, which can be ordered separately under Ident No. 33321100 (for 10 SEMITRANS 3). Larger packing units of 12 and 20 pieces are used if suitable Accessories B 6 - 4. SEMIBOX C - 1.
(c) by SEMIKRON
B 6 - 162
0898

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