 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| N-CHANNEL 100V - 0.3 - 1A TO-92 STripFETTM POWER MOSFET TYPE STQ1NE10L s s s s s STQ1NE10L VDSS 100 V RDS(on) <0.4 ID 1A TYPICAL RDS(on) = 0.3 EXCEPTIONAL HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES, etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION TO-92 TO-92 (Ammopack) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Ptot(1) dv/dt (2) EAS (3) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 16 1 0.6 4 3 0.025 6 400 -55 to 150 Unit V V V A A A W W/C V/ns mJ C C (*) Pulse width limited by safe operating area. (1) Related to Rthj -l (2) ISD 1A, di/dt 200A/s, VDD V (BR)DSS, Tj TJMAX (3) Starting T j = 25 oC, ID = 1A, VDD = 50V December 2002 . 1/9 STQ1NE10L THERMAL DATA Rthj-Lead Rthj-amb Tl Thermal Resistance Junction-Lead Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 40 125 260 C/W C/W C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 16 V Min. 100 1 10 100 Typ. Max. Unit V A A nA ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 A ID = 0.5 A ID = 0.5 A Min. 1 0.30 0.35 Typ. Max. 2.5 0.40 0.45 Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15V ID = 0.5 A Min. Typ. 2 345 45 20 Max. Unit S pF pF pF VDS = 25V f = 1 MHz VGS = 0 2/9 STQ1NE10L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 0.5 A VDD = 50 V VGS = 10 V RG = 4.7 (Resistive Load, Figure 3) VDD= 80 V ID= 1 A VGS= 5 V Min. Typ. 11 12 7 1.5 3.5 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 0.5 A VDD = 50 V VGS = 5 V RG = 4.7, (Resistive Load, Figure 3) Min. Typ. 20 13 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1 A VGS = 0 52 90 3.5 Test Conditions Min. Typ. Max. 1 4 1.5 Unit A A V ns nC A ISD = 1 A di/dt = 100A/s Tj = 150C VDD = 30 V (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance Junction-lead 3/9 STQ1NE10L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STQ1NE10L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics . . . 5/9 STQ1NE10L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STQ1NE10L TO-92 MECHANICAL DATA mm DIM. MIN. TYP. MAX. MIN. inch TYP. MAX. A 4.58 5.33 0.180 0.210 B 4.45 5.2 0.175 0.204 C 3.2 4.2 0.126 0.165 D 12.7 0.500 E 1.27 0.050 F 0.4 0.51 0.016 0.020 G 0.35 0.14 7/9 STQ1NE10L 8/9 STQ1NE10L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 9/9 |
Price & Availability of STQ1NE10L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |