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| RF Power Field Effect Transistor LDMOS, 1600 -- 1700 MHz, 30W, 28V 5/5/05 Preliminary MAPLST1617-030CF Features Designed for INMARSAT applications in the 1620-1670 MHz frequency band. Typical Two Tone Performance (IMD=-30 dBc): Average Output Power: 15W Gain: 14dB (typ.) Efficiency: 38% (typ.) 10:1 VSWR Ruggedness at 30W, 28V, 1670MHz) Package Style MAPLST1617-030CF Maximum Ratings Parameter Drain--Source Voltage Gate--Source Voltage Total Power Dissipation @ TC = 25 C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 97 -40 to +150 +200 Units Vdc Vdc W C C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.8 Unit C/W NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 1600-- 1700 MHz, 30W, 28V MAPLST1617-030CF 5/5/05 Preliminary Characteristic DC CHARACTERISTICS @ 25C Characteristic Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 Adc) OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) 65 DS GS Gate--Source Leakage Current Current Zero Gate Voltage Drain Leakage (VGS = 5 Vdc, VV = = 0) (V = 26 Vdc, DS 0) DS GS Symbol Min Typ Max Unit Symbol V(BR)DSS IDSS IDSS IGSS IDSS VGS(th) IGSS VDS(Q) VDS(on) Gm Min 65 -- -- -- -- -- 2 2 -- -- Typ -- -- -- -- -- -- -- -- 0.2 1.2 Max -- 101 11 1 4 Unit Vdc Adc Adc Adc Adc Vdc Adc Vdc Vdc S Gate Threshold Voltage Gate--Source Leakage Current (VDS = 10 Vdc, ID = 1 mA) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON (VDS = 28 Vdc, ID = 250 mA) CHARACTERISTICS Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25C Input Capacitance (Including Input Matching Capacitor in Package) DYNAMIC CHARACTERISTICS (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance M/A-COM FUNCTIONAL TESTS (In (VDS = 28 Vdc, VGS = 0, f = 1 MHz) 4.5 -- -- Ciss Coss -- -- 90 32.5 -- -- pF pF Test Fixture) (2) Crss -- 1.5 -- pF RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture) CW Gain (VDS = 28 Vdc, POUT = 30 W (avg.), IDQ = 250 mA, f0 = 1670 MHz) CW Drain Efficiency (VDS = 28 Vdc, POUT = 30 W (avg.), IDQ = 250 mA, f0 = 1670 MHz) CW Input Return Loss (VDS = 28 Vdc, POUT = 30 W (avg.), IDQ = 250 mA, f0 = 1670 MHz) IMD (VDS = 28 Vdc, POUT = 15 W (avg.) (30 W PEP), IDQ = 250 mA, f0 = 1670 MHz, f1 = 1670.1 MHz) Output VSWR Tolerance (VDS = 28 Vdc, POUT = 30 W (avg.), IDQ = 250 mA, f0 = 1670 MHz) Gps EFF () -- -- 14 50 -- -- dB % IRL -- -10 -9 dB IMD -- -30 -- dBc No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 1600-- 1700 MHz, 30W, 28V MAPLST1617-030CF 5/5/05 Preliminary C1,C7 Electrolytic Surface Mt. Cap., 100 F C2,C8 Ceramic Chip Capacitor, 0.1 F C3,C9 Ceramic Chip Capacitor, 1000 pF C4,C5,C10,C13 Chip Capacitor, 10 pF ATC100B C6,C11 Chip Capacitor, 1.2 pF ATC100B C12 Chip Capacitor, 1.0 pF ATC100B J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1,L2 Inductor, 35.5 nH, CoilCraft B09T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST1617-030CF R1 Chip Resistor (0805), 10k Ohm R2 Chip Resistor (0805), 10 Ohm Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Distributed Microstrip Element, 0.820" x 0.082" Distributed Microstrip Element, 0.590" x 0.082" Distributed Microstrip Element, 0.370" x 0.160" Distributed Microstrip Element, 0.320" x 0.300" Distributed Microstrip Element, 0.140" x 0.300" Distributed Microstrip Element, 0.040" x 0.660" Distributed Microstrip Element, 0.186" x 0.660" Distributed Microstrip Element, 0.425" x 0.380" Distributed Microstrip Element, 0.150" x 0.082" Distributed Microstrip Element, 0.610" x 0.082" Distributed Microstrip Element, 0.820" x 0.082" PC Board (74350132-01), Arlon (GX03005522) Woven GlassTeflon .031" Thick, Er=2.5, 2 Oz Copper Both Sides Figure 1. 1620--1670 MHz Test Fixture Schematic Figure 2. 1620--1670 MHz Test Fixture Component Layout 3 RF Power LDMOS Transistor, 1600-- 1700 MHz, 30W, 28V MAPLST1617-030CF 5/5/05 Preliminary 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 55 1670 MHz, 28V, IDQ = 250mA 45 Gain (dB) 35 25 15 Gain Eff 5 33 38 42 Pout (dBm ) 44 46 Graph 1. CW: Gain and Efficiency vs. Output Power -25 -30 -35 -40 IMD (dBc) -45 -50 -55 -60 -65 -70 33 35 36 37 38 39 40 41 42 1.67GHz (IM3) 1.67GHz (IM5) 1670 MHz, 28V, IDQ = 250mA (2-TONE, 100kHz Spacing) Pout (dBm-Avg.) Graph 2. Two Tone: Intermodulation Distortion vs. Output Power 4 Drain Eff (%) RF Power LDMOS Transistor, 1600-- 1700 MHz, 30W, 28V MAPLST1617-030CF 5/5/05 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 5 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 |
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