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| QS6J3 Transistors Small switching (-20V, -1.5A) QS6J3 Features 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Pch Treueh MOSFET have a low on-state resistance with a fast switching. 3) Nch Treueh MOSFET is reacted a low voltage drive (2.5V). External dimensions (Unit : mm) TSMT6 1pin mark (1) 2.8 1.6 (6) 0.4 (3) 0.16 (4) Each lead has same dimensions Applications Switch Abbreviated symbol : J03 Structure Silicon P-channel MOSFET Equivalent circuit (6) (5) 1 (4) Packaging specifications Package Type QS6J3 Code Basic ordering unit (pieces) Taping TR 3000 2 2 1 (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE (1) Tr1 (2) Tr1 (3) Tr2 (4) Tr2 (5) Tr2 (6) Tr1 0.85 2.9 (2) (5) Source Gate Drain Source Gate Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits -20 12 1.5 6.0 -0.75 -6.0 1.25 150 -55 to +150 Unit V V A A A A W / Total C C 1 1 2 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board Thermal resistance Parameter Channel to ambient Mounted on a ceramic board Symbol Rth (ch-a) Limits 100 Unit C / W / Total 1/3 QS6J3 Transistors Electrical characteristics (Ta=25C) Parameter Symbol Min. IGSS - Gate-source leakage Drain-source breakdown voltage V(BR) DSS -20 Zero gate voltage drain current IDSS - VGS (th) -0.7 Gate threshold voltage - Static drain-source on-state RDS (on) - resistance - 1.0 Yfs Forward transfer admittance Ciss - Input capacitance Coss Output capacitance - Reverse transfer capacitance Crss - Turn-on delay time td (on) - Rise time tr - Turn-off delay time td (off) - Fall time tf - Total gate charge Qg - Gate-source charge Qgs - Gate-drain charge Qgd - Pulsed Typ. - - - - 155 170 310 - 270 40 35 10 12 45 20 3.0 0.8 0.85 Max. 10 - -1 -2.0 215 235 430 - - - - - - - - - - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=12V, VDS=0V ID= -1mA, VGS=0V VDS= -20V, VGS=0V VDS= -10V, ID= -1mA ID= -1.5A, VGS= -4.5V ID= -1.5A, VGS= -4V ID= -0.75A, VGS= -2.5V VDS= -10V, ID= -0.75A VDS= -10V VGS=0V f=1MHz ID= -0.75A VDD -15V VGS= -4.5V RL=20 RG=10 VDD -15V RL=10 VGS= -4.5V RG=10 ID= -1.5A Body diode (Source-drain) Parameter Forward voltage Symbol VSD Min. - Typ. - Max. -1.2 Unit V Conditions IS= -0.75A, VGS=0V Electrical characteristic curves 1000 GATE-SOURCE VOLTAGE : -VGS (V) Ta=25C f=1MHz VGS=0V Ciss 1000 SWITCHING TIME : t (ns) CAPACITANCE : C (pF) tf 100 Ta=25C VDD= -15V VGS= -4.5A RG=10 Pulsed 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 Ta=25C VDD= -15V ID= -1.5A RG=10 Pulsed 100 td (off) td (on) tr 10 Coss Crss 10 0.01 0.1 1 10 100 1 0.01 0.1 1 10 2.5 3 3.5 DRAIN-SOURCE VOLTAGE : -VDS (V) DRAIN CURRENT : -ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 10 Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics DRAIN CURRENT : -ID (A) 400 ID= -1.5A ID= -0.75A 1 0.1 Ta=125C Ta=75C Ta=25C Ta= -25C SOURCE CURRENT : -IS (A) VDS= -10V Pulsed 500 Ta=25C Pulsed 10 Ta=25C VGS=0V Pulsed 300 1 200 0.1 0.01 100 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 0 2 4 6 8 10 12 GATE-SOURCE VOLTAGE : -VGS (V) GATE-SOURCE VOLTAGE : -VGS (V) 0.01 0.0 0.5 1.0 1.5 2.0 SOURCE-DRAIN VOLTAGE : -VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage 2/3 QS6J3 Transistors STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) VGS= -4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C VGS= -4V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 10000 10000 10000 Ta=125C Ta=75C Ta=25C Ta= -25C VGS= -2.5V Pulsed 1000 1000 1000 100 100 100 10 0.1 1 10 10 0.1 1 10 10 0.1 1 10 DRAIN CURRENT : -ID (A) DRAIN CURRENT : -ID (A) DRAIN CURRENT : -ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current () Fig.8 Static Drain-Source On-State Resistance vs. Drain Current () Fig.9 Static Drain-Source On-State Resistance vs. Drain Current () Measurement circuits Pulse Width VGS ID RL D.U.T. RG VDD VDS VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tr Fig.10 Switching Time Measurement Circuit Fig.11 Switching Waveforms VG VGS ID RL IG(Const) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.12 Gate Charge Measurement Circuit Fig.13 Gate Charge Waveform 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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