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| SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2196 (F20W50VX2) 500V 20A FEATURES Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case :: MTO-3P Case E-pack (Unit : mm) Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter RATINGS Absolute Maximum Ratings Tc = 25 Item Symbol Conditions Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage Gate-Source Voltage VGSS ID Continuous Drain CurrentDC IDP Continuous Drain CurrentPeak) IS Continuous Source CurrentDC Total Power Dissipation PT IAS Single Pulse Avalanche Current Tch = 25 Recommended torque 0.5 Nm Mounting Torque Ratings -55150 150 500 30 20 60 20 125 20 0.8 Unit V A W A Nm Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranconductance gfs Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage jc Themal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions 2SK2196( F20W50VX2 ) Min. 500 Typ. Max. 250 0.1 6 2.5 15 0.27 3.0 Unit V A ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = 30V, VDS = 0V ID = 10A, VDS = 10V ID = 10A, VGS = 10V ID = 1mA, VDS = 10V IS = 10A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 20A VDS = 10V, VGS = 0V, f = 1MHZ ID = 10A, VGS = 10V, RL = 15 85 2400 170 500 135 340 S 0.35 3.5 V 1.5 1.0 / nC pF 225 565 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2196 40 Tc = -55C 35 30 Transfer Characteristics 25C 100C Drain Current ID [A] 25 20 15 10 5 0 150C VDS = 25V pulse test TYP 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK2196 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 1 ID = 10A 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2196 5 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2196 100 Safe Operating Area 10 100s 200s R DS(ON) limit 1 1ms Drain Current ID [A] 10ms DC 0.1 Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2196 Transient Thermal Impedance 100 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-5 10-3 10-4 10-2 10-1 100 101 102 Time t [s] 2SK2196 10000 Capacitance Ciss Capacitance Ciss Coss Crss [pF] 1000 Coss 100 Crss Tc=25C TYP 10 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2196 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2196 500 Gate Charge Characteristics 20 Drain-Source Voltage VDS [V] 15 VDD = 400V 300 200V 100V 10 200 VGS 5 100 ID = 20A 0 0 20 40 60 80 100 120 0 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 VDS |
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