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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2005.12.02 Page No. : 1/5 HT112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT112 is designed for use in general purpose amplifier and low-speed switching applications. TO-126 Absolute Maximum Ratings (TA=25C) * Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ................................................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25C) ................................................................................................................... 1.5 W Total Power Dissipation (TC=25C) .................................................................................................................... 30 W * Thermal Resistance Junction To Case Rjc................................................................................................................................... 4.2 oC/W * Maximum Voltages and Currents BVCBO Collector to Base Voltage....................................................................................................................... 100 V BVCEO Collector to Emitter Voltage .................................................................................................................... 100 V BVEBO Emitter to Base Voltage.............................................................................................................................. 5 V IC Collector Current ................................................................................................................................................ 4 A Electrical Characteristics (TA=25C) Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. 100 100 1 500 Typ. Max. 1 2 2 2.5 2.8 100 pF Unit V V mA mA mA V V K IC=1mA IC=30mA VCB=100V VCE=50V VEB=5V IC=2A, IB=8mA IC=2A, VCE=4V IC=1A, VCE=4V IC=2A, VCE=4V VCB=10V, IE=0 *Pulse Test: Pulse Width 380us, Duty Cycle2% Test Conditions HT112 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 10000 10000 Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2005.12.02 Page No. : 2/5 Current Gain & Collector Current 1000 125 C o 1000 125oC o hFE 100 25 C o hFE 75 C o 75 C 100 25 C o 10 hFE @ VCE=4V 10 hFE @ VCE=3V 1 1 10 100 1000 10000 1 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=250IB VCE(sat) @ IC=100IB Saturation Voltage (mV) 1000 25 C o Saturation Voltage (mV) 1000 25 C o 125 C o 75 C o 125 C o 75 C o 100 100 1000 10000 100 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VBE(sat) @ IC=250IB 10000 ON Voltage & Collcetor Current VBE(ON) @VCE=4V Saturation Voltage (mV) ON Voltage (mV) 25 C 1000 o 25 C 1000 125 C 75 C o o o 125 C o 75 C o 100 100 1000 10000 100 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) HT112 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2005.12.02 Page No. : 3/5 ON Voltage & Collcetor Current 10000 VBE(ON) @ VCE=3V 10 Switching Time & Collector Current VCC=30V, IC=250IB1= -250IB2 25 C 1000 125 C o o Switching Times (us) ... Tstg ON Voltage (mV) 1 Tf 75 C o Ton 100 100 0.1 1000 10000 1 10 Collector Current-IC (mA) Collector Current-IC (A) Capcitance & Reverse-Biased Voltage 100 10 Safe Operating Area PT=1mS PT=100mS Collector Current-IC (A) Capacitance (pF) 1 PT=1S Cob 0.1 10 0.1 1 10 100 0.01 1 10 100 Reverse Biased Voltage (V) Forward Voltage (V) HT112 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126 Dimension D A M B 1 2 3 N K Note: Green label is used for pb-free packing Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2005.12.02 Page No. : 4/5 J Marking: Pb Free Mark H 112 Date Code T Pb-Free: " . " (Note) Normal: None Control Code C Pin Style: 1.Emitter 2.Collector 3.Base G F H L DIM A B C D F G H J K L M N Min. 3.60 6.90 13.00 7.20 0.65 1.00 4.52 1.14 0.90 0.45 2.92 2.00 Max. 4.40 7.60 16.50 8.50 0.88 1.42 4.62 1.50 1.50 0.60 3.40 2.70 Unit: mm Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 3-Lead TO-126 Plastic Package HSMC Package Code: T Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HT112 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2005.12.02 Page No. : 5/5 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HT112 HSMC Product Specification |
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