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| MUBW 35-12 A7 Converter - Brake - Inverter Module (CBI2) 21 D11 1 D12 D13 2 D14 D15 7 3 D16 14 23 24 8 NTC T7 22 D7 T1 16 15 6 T2 11 10 D2 12 D1 T3 18 17 T4 D3 T5 20 19 T6 13 D5 5 D4 4 D6 9 Three Phase Rectifier VRRM = 1600V IDAVM = 44 A IFSM = 400 A Brake Chopper VCES = 1200 V IC25 = 35 A VCE(sat) = 2.3 V Three Phase Inverter VCES = 1200 V IC25 = 50 A VCE(sat) = 2.6 V Application: AC motor drives with q Input Rectifier Bridge D11 - D16 Symbol VRRM IFAV IDAVM IFSM Ptot TC = 80C; sine 180 TC = 80C; rectangular; d = 1/3 TVJ = 25C; t = 10 ms; sine 50 Hz TC = 25C Conditions Maximum Ratings 1600 30 29 400 120 V A A A W q q Input from single or three phase grid Three phase synchronous or asynchronous motor electric braking operation Features q q q Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.4 1.4 2.0 1 1.7 0.2 V V mA mA s 1.06 K/W q VF IR trr RthJC IF = 35 A; TVJ = 25C TVJ = 125C VR = VRRM; TVJ = 25C TVJ = 125C VR = 100 V; IF = 20 A; di/dt = -20 A/s (per diode) q q High level of integration - only one power semiconductor module required for the whole drive Fast rectifier diodes for enhanced EMC behaviour NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery Industry standard package with insulated copper base plate and soldering pins for PCB mounting Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-8 031 MUBW 35-12 A7 Output Inverter T1 - T6 Symbol VCES VGES VGEM IC25 IC80 RBSOA tSC (SCSOA) Ptot Conditions TVJ = 25C to 150C Continuous Transient TC = 25C TC = 80C VGE = 15 V; RG = 47 W; TVJ = 125C Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 47 W; TVJ = 125C non-repetitive TC = 25C Maximum Ratings 1200 20 30 50 35 ICM = 50 VCEK VCES 10 225 V V V A A A s W Equivalent Circuits for Simulation Conduction D11 - D16 Rectifier Diode (typ. at TJ = 125C) V0 = 0.96 V; R0 = 13 mW T1 - T6 / D1 - D6 IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.13 V; R0 = 50 mW Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.26V; R0 = 15 mW T7 / D7 IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.37 V; R0 = 62 mW Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.39 V; R0 = 56 mW Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.6 2.9 4.5 1 200 100 70 500 70 5.3 3.9 1650 120 3.1 6.5 1.1 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.55 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 35 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Thermal Response Inductive load, TVJ = 125C VCE = 600 V; IC = 35 A VGE = 15 V; RG = 47 W D11 - D16 Rectifier Diode (typ.) Cth1 = 0.131 J/K; Rth1 = 0.851 K/W Cth2 = 0.839 J/K; Rth2 = 0.209 K/W T1 - T6 / D1 - D6 IGBT (typ.) Cth1 = 0.201 J/K; Rth1 = 0.419 K/W Cth2 = 1.25 J/K; Rth2 = 0.131 K/W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 35 A (per IGBT) Output Inverter D1 - D6 Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 50 33 A A Free Wheeling Diode (typ.) Cth1 = 0.116 J/K; Rth1 = 0.973 K/W Cth2 = 0.879 J/K; Rth2 = 0.217 K/W T7 / D7 Symbol VF IRM trr RthJC Conditions IF = 35 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 30 A; diF/dt = -500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.8 1.8 27 150 V V A ns 1.19 K/W IGBT (typ.) Cth1 = 0.156 J/K; Rth1 = 0.545 K/W Cth2 = 1.162 J/K; Rth2 = 0.155 K/W Free Wheeling Diode (typ.) Cth1 = 0.043 J/K; Rth1 = 2.738 K/W Cth2 = 0.54 J/K; Rth2 = 0.462 K/W (c) 2000 IXYS All rights reserved 2-8 MUBW 35-12 A7 Brake Chopper T7 Symbol VCES VGES VGEM IC25 IC80 RBSOA tSC (SCSOA) Ptot Symbol Conditions TVJ = 25C to 150C Continuous Transient TC = 25C TC = 80C VGE = 15 V; RG = 82 W; TVJ = 125C Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 82 W; TVJ = 125C non-repetitive TC = 25C Conditions Maximum Ratings 1200 20 30 35 25 ICM = 35 VCEK VCES 10 180 V V V A A A s W Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.3 2.6 4.5 0.8 200 100 75 500 70 3.1 2.4 1000 70 3 6.5 0.8 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.7 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 20 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 20 A VGE = 15 V; RG = 82 W VCE = 25 V; VGE = 0 V; f = 1 MH z VCE = 600V; VGE = 15 V; IC = 20 A Brake Chopper D7 Symbol VRRM IF25 IF80 Symbol VF IR IRM trr RthJC (c) 2000 IXYS All rights reserved Conditions TVJ = 25C to 150C TC = 25C TC = 80C Conditions IF = 20 A; TVJ = 25C TVJ = 125C VR = VRRM; TVJ = 25C TVJ = 125C IF = 20 A; diF/dt = -400 A/s; TVJ = 125C VR = 600 V Maximum Ratings 1200 16 11 V A A Characteristic Values min. typ. max. 3.6 2.6 0.06 0.07 13 110 V V mA mA A ns 3.2 K/W 3-8 MUBW 35-12 A7 Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Dimensions in mm (1 mm = 0.0394") Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+150 150 -40...+125 2500 2.7 - 3.3 C C C V~ Nm Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 kW K Characteristic Values min. typ. max. 5 mW mm mm K/W g (c) 2000 IXYS All rights reserved 4-8 MUBW 35-12 A7 Input Rectifier Bridge D11 - D16 120 A 100 IF 80 TVJ= 125C TVJ= 25C 60 80 40 40 TVJ= 125C 120 200 A 160 IFSM TVJ= 45C 50Hz, 80% VRRM 103 As I2t TVJ= 125C 2 TVJ= 45C 20 0 0.0 0.5 1.0 1.5 VF 2.0 V 2.5 0 0.001 102 0.01 0.1 t s 1 1 2 3 4 5 6 7 8 910 ms t Fig. 1 Forward current versus voltage drop per diode 800 W 600 Ptot Fig. 2 Surge overload current Fig. 3 I2t versus time per diode 100 A 80 Id(AV) 60 400 RthA: 0.05 K/W 0.15 K/W 0.3 K/W 0.5 K/W 1 K/W 2 K/W 5 K/W 40 200 20 0 0 40 80 120 Id(AV)M A 0 20 40 60 80 100 120 140 C Tamb 0 0 20 40 60 80 100 120 140 C TC Fig. 4 1.2 K/W 1.0 ZthJC 0.8 Power dissipation versus direct output current and ambient temperature, sin 180 Fig. 5 Max. forward current versus case temperature 0.6 0.4 0.2 DWFN21-16 0.0 0.001 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case (c) 2000 IXYS All rights reserved 5-8 MUBW 35-12 A7 Output Inverter T1 - T6 / D1 - D6 100 A 80 VGE= 17V 15V 13V 100 A 80 60 11V 11V VGE= 17V 15V 13V IC IC 60 40 20 0 0 1 2 3 4 VCE 40 20 0 9V TVJ = 125C 9V TVJ = 25C 5 6V7 0 1 2 3 4 5 VCE 6V7 Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics 100 A 80 IC 90 A 75 IF 60 60 45 40 TVJ = 125C TVJ = 125C TVJ = 25C 30 TVJ = 25C 20 0 4 6 8 10 12 VGE VCE = 20V 15 0 14 V 16 0 1 2 VF 3 V 4 Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of free wheeling diode 50 trr 20 V 200 160 ns 120 80 TVJ = 125C VR = 600V IF = 30A MUBW3512A7 15 VGE 40 A IRM trr 30 10 20 5 VCE = 600V IC = 35A 10 IRM 40 0 0 0 40 80 120 QG nC 0 160 0 200 400 600 800 A/ms -di/dt 1000 Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 6-8 MUBW 35-12 A7 Output Inverter T1 - T6 / D1 - D6 20 mJ Eon 200 ns 150 t Eoff 6 mJ td(off) Eoff 600 ns 400 t VCE = 600V VGE = 15V RG = 47W TVJ = 125C 15 4 10 tr VCE = 600V VGE = 15V RG = 47W TVJ = 125C 100 2 50 200 5 td(on) Eon tf 0 0 20 40 IC 60 A 0 80 0 0 20 40 IC A 0 60 Fig. 13 Typ. turn on energy and switching times versus collector current 8 mJ Eon VCE = 600V VGE = 15V IC = 35A TVJ = 125C Fig. 14 Typ. turn off energy and switching times versus collector current 5 mJ Eoff 1000 ns Eoff td(off) 800 t 600 VCE = 600V VGE = 15V IC = 35A TVJ = 125C 160 ns 120 t 6 4 3 4 Eon 80 td(on) 2 40 400 200 2 tr 1 0 0 20 40 60 RG 0 0 20 40 60 RG 80 W 0 100 tf 80 W 0 100 Fig. 15 Typ. turn on energy and switching times versus gate resistor 60 A ICM ZthJC 10 K/W 1 Fig.16 Typ. turn off energy and switching times versus gate resistor diode IGBT 40 0.1 0.01 20 RG = 47 W TVJ = 125C single pulse 0.001 0.0001 0.00001 0.0001 0.001 MUBW3512A7 0 0 200 400 600 800 1000 1200 1400 V VCE 0.01 0.1 t 1 s 10 Fig. 17 Reverse biased safe operating area RBSOA Fig. 18 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 7-8 MUBW 35-12 A7 Brake Chopper T7 / D7 50 40 A IC TVJ = 25C TVJ = 125C 30 25 A IF 20 TVJ = 125C TVJ = 25C 30 15 20 10 10 VGE = 15V 5 0 0 0 1 2 3 VCE 4 V5 0 1 2 VF 3 V 4 Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of free wheeling diode 800 4 mJ Eoff VCE = 600V VGE = 15V RG = 82W TVJ = 125C 2.0 mJ Eoff 1.5 Eoff VCE = 600V VGE = 15V IC = 20A TVJ = 125C 1000 ns td(off) 750 t ns 600 t td(off) 3 2 400 1.0 500 1 Eoff tf 200 0.5 tf 0 20 40 60 80 100 120 RG 250 0 0 5 10 15 20 25 IC 0 30 A 35 0.0 W 140 0 Fig. 21 Typ. turn off energy and switching times versus collector current 10 K/W 1 ZthJC 0.1 R 0.01 0.001 single pulse IGBT diode Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC 10000 W 1000 0.0001 0.00001 0.0001 0.001 100 0.01 0.1 t 1 s 10 0 25 50 75 100 T MUBW3512A7 125 C 150 Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus temperature (c) 2000 IXYS All rights reserved 8-8 |
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