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| AP03N70H/J Pb Free Plating Product Advanced Power Electronics Corp. Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement RoHS Compliant G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 3.6 3.3A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP03N70J) is available for low-profile applications. GD S TO-252(H) G DS TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 30 3.3 2.1 13.2 45 0.36 2 Units V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 85 3.3 3.3 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Units /W /W Data & specifications subject to change without notice 200705052-1/4 AP03N70H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=1.6A VDS=VGS, ID=250uA VDS=10V, ID=1.6A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=30V ID=3.3A VDS=480V VGS=10V VDD=300V ID=3.3A RG=10,VGS=10V RD=91 VGS=0V VDS=25V f=1.0MHz Min. 600 2 - Typ. 0.6 2 11.4 3.1 4.2 8.4 6 17.7 5.9 600 45 4 Max. Units 3.6 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 3 2 Test Conditions IS=3A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/s Min. - Typ. 422 2580 Max. Units 1.5 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=15mH , RG=25 , IAS=3A. 3.Pulse width <300us , duty cycle <2%. 2/4 AP03N70H/J 4 T C =25 C 3 o 10V 6.0V 2 T C =150 C o 10V 5.0V ID , Drain Current (A) ID , Drain Current (A) 2 4.5V 1 2 5.0V 1 4.0V 1 4.5V V G =4.0V 0 V G =3.5V 0 0 5 10 15 20 25 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.5 2.1 Normalized BVDSS (V) 1.1 I D =1.6A V G =10V Normalized RDS(ON) 1.7 1.0 1.3 0.9 0.9 0.5 0.8 -50 0 50 100 150 0.1 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Temperature 100 5 Fig 4. Normalized On-Resistance v.s. Junction Temperature 4 10 VGS(th) (V) 1.3 3 IS (A) 1 T j = 150 o C T j = 25 o C 2 0.1 1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP03N70H/J f=1.0MHz 16 10000 14 VGS , Gate to Source Voltage (V) 12 I D =3.3A V DS =480V C iss C (pF) 10 8 100 C oss 6 4 C rss 2 1 0 0 4 8 12 16 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 Normalized Thermal Response (Rthjc) DUTY=0.5 0.2 10us ID (A) 1 0.1 0.05 0.02 100us 1ms 0.1 0.01 PDM t Single Pulse 0.1 10ms T c =25 o C Single Plude 100ms T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.01 1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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