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TYPICAL PERFORMANCE CURVES
APT60GU30B APT60GU30S
(R)
APT60GU30B_S
300V
POWER MOS 7 IGBT
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
TO-247
D3PAK
C G E
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @
* SSOA rated
G
C
E
C G E
All Ratings: TC = 25C unless otherwise specified.
APT60GU30B_S UNIT
300 20 30
7
Volts
TC = 25C
100 60 200 200A @ 300V 417 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
300 3 4.5 1.5 1.5 250
A nA
3-2004 050-7464 Rev A
6 2.0
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C)
2 2
Volts
I CES I GES
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2500 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT60GU30B_S
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 150V I C = 30A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 300V Inductive Switching (25C) VCC = 200V VGE = 15V I C = 30A
4 5
MIN
TYP
MAX
UNIT pF V nC A
2990 275 21 7.0 100 20 30 200 48 20 215 85 TBD 130 240 48 20 250 155 TBD 200 340
MIN TYP MAX UNIT C/W gm ns ns
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
4 5
R G = 20 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 200V VGE = 15V I C = 30A R G = 20 TJ = +125C
Turn-on Switching Energy (Diode)
6
J
THERMAL AND MECHANICAL CHARACTERISTICS 0.30 N/A 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Countinous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7464
Rev A
3-2004
TYPICAL PERFORMANCE CURVES
60 50 40 30 20 10 0 TC=125C TC=-55C
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
60 50 40
APT60GU30B_S
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TC=25C
TC=-55C TC=25C 30 20 10 0
TC=125C
0 0.5 1 1.5 2 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
0 0.5 1 1.5 2 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC = 30A TJ = 25C
FIGURE 1, Output Characteristics(VGE = 15V) 200
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 GATE CHARGE (nC) FIGURE 4, Gate Charge IC = 60A 1.5 IC = 15A 1.0 IC = 30A 120 VCE = 240V VCE = 60V VCE = 150V
180
IC, COLLECTOR CURRENT (A)
160 140 120 100 80 60 40 20 0 0 1 TJ = -55C TJ = 25C TJ = 125C 234 56 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3 2.5 2 1.5 1 0.5 IC= 60A
IC= 30A IC= 15A
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
2
0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
6 7 8 9 10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
0
5
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 160
0 -50
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
IC, DC COLLECTOR CURRENT(A)
1.15
140 120 100 80 60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
Lead Temperature Limited
050-7464
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
Rev A
3-2004
60
td(ON), TURN-ON DELAY TIME (ns)
300 VGE= 15V
td (OFF), TURN-OFF DELAY TIME (ns)
APT60GU30B_S
50 40 30 20 10
250 200 150 100 50 0 VCE = 200V RG = 20 L = 100 H
VGE =15V,TJ=25C
VGE =15V,TJ=125C
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 60 50
tr, RISE TIME (ns) tf, FALL TIME (ns)
RG = 20, L = 100H, VCE = 200V
VCE = 200V TJ = 25C, TJ =125C RG = 20 L = 100 H
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 180 160 140
40 30 20 10
120 100 80 60 40
TJ = 125C, VGE = 10V or 15V
TJ = 25C, VGE = 10V or 15V
TJ = 25 or 125C,VGE = 15V
20 0
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 600
EON2, TURN ON ENERGY LOSS (J)
VCE = 200V L = 100 H RG = 20
RG = 20, L = 100H, VCE = 200V
20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1200
EOFF, TURN OFF ENERGY LOSS (J)
10
500 400 300 200 100
1000 800 600 400 200 0
TJ = 125C, VGE = 10V or 15V
TJ =125C, VGE=15V
VCE = 200V L = 100 H RG = 20
TJ = 25C, VGE=15V
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 1400
SWITCHING ENERGY LOSSES (J)
VCE = 200V VGE = +15V TJ = 125C
TJ = 25C, VGE = 10V or 15V
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 1200
SWITCHING ENERGY LOSSES (J)
VCE = 200V VGE = +15V RG = 20
1200 1000
1000 800 600
Eoff 60A
Eoff 60A 800 Eon2 60A 600 400 200 0 5 Eoff 30A Eoff 15A
Eon2 60A 400 200 0 Eoff 30A Eon2 30A Eon2 15A 0
3-2004
Eon2 30A Eon2 15A
Rev A
Eoff 15A
050-7464
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
5,000 Cies
250
APT60GU30B_S
200
C, CAPACITANCE ( F)
P
1,000 500 Coes 100 50 Cres 10
IC, COLLECTOR CURRENT (A)
150
100
50
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.35 0.30 0.9 0.25 0.7 0.20 0.15 0.10 0.05 0 0.5 0.3 0.1 0.05 10-5 10-4
0 50 100 150 200 250 300 350 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0
ZJC, THERMAL IMPEDANCE (C/W)
Note:
PDM t1 t2
SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL
400
FMAX, OPERATING FREQUENCY (kHz)
Junction temp. ( C) 0.0218 0.00450F
100
Power (watts)
0.119
0.0119F
Fmax = min(f max1 , f max 2 )
50
f max1 =
TJ = 125C TC = 75C D = 50 % VCE = 200V RG = 5
0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
0.160 Case temperature
0.121F
f max 2 = Pdiss =
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
20 30 40 50 60 70 80 90 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
10
TJ - TC R JC
050-7464
Rev A
3-2004
APT60GU30B_S
APT15DS30
10% td(on)
Gate Voltage
TJ = 125 C
V CC
IC
V CE
tr 90%
Collector Current
5% 10%
5%
Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90% Gate Voltage
TJ = 125 C
A
*DRIVER SAME TYPE AS D.U.T.
td(off)
Collector Current
tf
90%
100uH
V CE IC V CLAMP B
Collector Voltage Switching Energy
10% 0
A DRIVER*
D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
TO-247 Package Outline
Collector (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
1.04 (.041) 1.15 (.045)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
0.46 (.018) 0.56 (.022) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082)
1.27 (.050) 1.40 (.055)
3.81 (.150) 4.06 (.160) (Base of Lead)
3-2004
1.01 (.040) 1.40 (.055)
Gate Collector Emitter
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Collector) and Leads are Plated
Rev A
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
050-7464
Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Emitter Collector Gate Dimensions in Millimeters (Inches)
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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