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APTM50DHM75T
Asymmetrical - Bridge MOSFET Power Module
VBUS VBUS SENSE Q1 CR3
VDSS = 500V RDSon = 75mW max @ Tj = 25C ID = 46A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile
G1 S1 OUT1 OUT2 Q4
CR2 G4 0/VBUS SENSE S4 0/VBUS NTC2
NTC1
VBUS SENSE
G4 S4
OUT2
VBUS
0/VBUS
OUT1
S1 G1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 500 46 34 184 30 75 357 46 50 2500 Unit V A V mW W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM50DHM75T - Rev 2 May, 2004
Tc = 25C
APTM50DHM75T
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A
VGS = 0V,VDS= 500V VGS = 0V,VDS= 400V Tj = 25C Tj = 125C
Min 500
Typ
Max 100 500 75 5 100
Unit V A mW V nA
VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 46A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 46A RG = 5W Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 46A, RG = 5 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 46A, RG = 5 Min Typ 5600 1200 90 123 33 65 18 35 87 77 755 726 1241 846 J J ns Max Unit pF
nC
Diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt = 200A/s IF = 60A VR = 400V di/dt = 200A/s Min Tc = 70C Typ 60 1.6 1.9 1.4 130 170 220 920 Max 1.8 V Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1.
APT website - http://www.advancedpower.com
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APTM50DHM75T - Rev 2 May, 2004
APTM50DHM75T
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor diode 2500 -40 -40 -40 Min Typ Max 0.35 0.9 150 125 100 4.7 160 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
RT = e ae1 1 ou T: Thermistor temperature exp e B25 / 85 c c T - T /u RT: Thermistor value at T / e 25 ou e R 25
Min
Typ 68 4080
Max
Unit kW K
Package outline
APT website - http://www.advancedpower.com
3-6
APTM50DHM75T - Rev 2 May, 2004
APTM50DHM75T
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
0 0.00001
Low Voltage Output Characteristics 180 160 ID, Drain Current (A) 140 120 100 80 60 40 20 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 23A
Transfert Characteristics
120
VGS=10&15V ID, Drain Current (A) 8V 7.5V 7V 6.5V 6V 5.5V
100 80 60 40 20 0
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
TJ=25C TJ=125C TJ=-55C
25
0
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 50 40 30 20 10 0
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0
VGS=10V
VGS=20V
20
40
60
80
100
25
ID, Drain Current (A)
50 75 100 125 TC, Case Temperature (C)
150
APTM50DHM75T - Rev 2 May, 2004
APT website - http://www.advancedpower.com
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APTM50DHM75T
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 VGS, Gate to Source Voltage (V) C, Capacitance (pF) Ciss Coss 1000
limited by RDSon
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS=10V ID=23A
-50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
100
limited by RDSon
100s
10 1ms 10ms Single pulse TJ=150C 1 100ms
1
0.1 10 100 1000 VDS, Drain to Source Voltage (V)
10000
Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=46A 12 T =25C J V =250V
CE
10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC)
APTM50DHM75T - Rev 2 May, 2004
VCE=400V
1000
100
Crss
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
APT website - http://www.advancedpower.com
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APTM50DHM75T
Delay Times vs Current 100 80 60 40 20 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Current 2.5 Switching Energy (mJ) 2 1.5 1 0.5 0 10 20 30 40 50 60 70 ID, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 10 15 20 25 30 35 40 ID, Drain Current (A)
VDS=333V D=50% RG=5 TJ=125C VDS=333V RG=5 TJ=125C L=100H
Rise and Fall times vs Current 120 100 tr and tf (ns) 80 60 40 20 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Gate Resistance 4 Switching Energy (mJ) 3.5 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage Eon
VDS=333V ID=46A TJ=125C L=100H VDS=333V RG=5 TJ=125C L=100H
td(off)
td(on) and td(off) (ns)
tf
td(on)
tr
VDS=333V RG=5 TJ=125C L=100H
Eon
Eoff
Eoff
IDR, Reverse Drain Current (A)
400
1000
100
TJ=150C
10 TJ=25C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTM50DHM75T - Rev 2 May, 2004

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