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CBRHD-01 HIGH DENSITY 0.8 AMP DUAL IN LINE BRIDGE RECTIFIER
Central
FEATURES:
TM
Semiconductor Corp.
* Truly efficient use of board space, requires only 42mm2 of board space vs. 120mm2 of board space for industry standard 1.0 Amp surface mount bridge rectifier. * 50% higher density (amps/mm2) than the industry standard 1.0 Amp surface mount bridge rectifier. HD DIP CASE
* This series is UL listed, UL file number E130224
* Glass passivated chips for high reliability.
DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHD-01 is a silicon full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. MARKING CODE: CBRHD-01: CBD1
MAXIMUM RATINGS: (TA=25C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current (TA=40C)(1) Average Forward Current (TA=40C)(2) Peak Forward Surge Current Operating and Storage Junction Temperature Thermal Resistance (3) TJ,Tstg JA -65 to +150 85 C C/W SYMBOL VRRM VR VR(RMS) IO IO IFSM 100 100 70 0.5 0.8 30 UNITS V V V A A A
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IR IR VF CJ VR= 100V VR= 100V, TA=125C IF=400mA VR=4.0V, f=1.0MHz 9.0
MAX 5.0 500 1.0
UNITS A A V pF
(1) Mounted on a Glass-Epoxy P.C.B. (2) Mounted on a Ceramic P.C.B. (3) Mounted on P.C.B. with 0.5" x 0.5" copper pads.
R0 (11-February 2005)
Central
TM
CBRHD-01 HIGH DENSITY 0.8 AMP DUAL IN LINE BRIDGE RECTIFIER
Semiconductor Corp.
HD DIP CASE - MECHANICAL OUTLINE
MARKING CODE: CBRHD01: CBD1
R0 (11-February 2005)

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