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| CYT5551D SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5551D type consists of two (2) isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial planar process, this SUPERminiTM device is ideal for high voltage amplifier applications. MARKING CODE: FULL PART NUMBER SOT-228 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg JA -65 to +150 62.5 C C/W SYMBOL VCBO VCEO VEBO IC PD 180 160 6.0 600 2.0 UNITS V V V mA W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX ICBO VCB=120V 50 ICBO VCB=120V, TA=100C 50 IEBO VBE=4.0V 50 BVCBO IC=100A 180 BVCEO IC=1.0mA 160 BVEBO IE=10A 6.0 VCE(SAT) IC=10mA, IB=1.0mA 0.15 VCE(SAT) IC=50mA, IB=5.0mA 0.20 VBE(SAT) IC=10mA, IB=1.0mA 1.00 VBE(SAT) IC=50mA, IB=5.0mA 1.00 hFE VCE=5.0V, IC=1.0mA 80 VCE=5.0V, IC=10mA 80 250 hFE hFE VCE=5.0V, IC=50mA 30 fT VCE=10V, IC=10mA, f=100MHz 100 300 Cob VCB=10V, IE=0, f=1.0MHz 6.0 Cib VEB=0.5V, IC=0, f=1.0MHz 20 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 200 NF VCE=5.0V, IC=200A, RS=10 f=10Hz to 15.7kHz 8.0 UNITS nA A nA V V V V V V V MHz pF pF dB R1 (11-August 2005) Central TM CYT5551D SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS Semiconductor Corp. SOT-228 CASE - MECHANICAL OUTLINE LEAD CODE: 1) COLLECTOR 2) COLLECTOR 3) COLLECTOR 4) COLLECTOR 5) EMITTER Q2 6) BASE Q2 7) EMITTER Q1 8) BASE Q1 Q1 Q1 Q2 Q2 MARKING CODE: FULL PART NUMBER R1 (11-August 2005) |
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