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GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-554H4 is a GaAlAs infrared LED having a peak wavelength as 850nm. It features ultra-high power, high response speed and molded package with higher radiant intensity. In addition to improving the S/N ratio in applied optical systems, the MIE-554H4 has greatly improved long-distance characteristics as well as significantly increased its range of applicability. 1.00 (.040) 7.62 (.300) MIE-554H4 Package Dimensions 5.05 (.200) Unite: mm ( inches ) 5.47 (.215) 5.90 (.230) Features l SEE NOTE 2 FLAT DENOTES CATHODE Ultra-high radiant intensity High response speed Standard T-1 3/4 ( 5mm ) package , Peak wavelength p = 850 nm Radiant angle : 50 2.54NOM. (.100) SEE NOTE 3 1.00MIN. (.040) 0.50 TYP. (.020) 23.40 MIN (.920) l l l l Application l l A C Data communication SIR Notes : 1.Tolerance is 0.25 mm (.010") unless otherwise noted. 2.Protruded resin under flange is 1.5 mm (.059") max. 3.Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings '@ TA=25oC Parameter Power Dissipation Peak Forward Current(300pps,10s pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55oC to +100oC 260 C for 5 seconds o o o Unit mW A mA V Unity Opto Technology Co., Ltd 11/20/2000 MIE-554H4 Optical-Electrical Characteristics : Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Rise Time Fall Time Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA IF=50mA IF=50mA Symbol Ie VF IR 21/2 Tr Tf Min. Typ . 2.1 1.5 850 30 50 20 30 Max. 1.8 100 @ TA=25 C Unit mW/sr V A nm nm deg . nsec nsec o Typical Optical-Electrical Characteristic Curves : Relative Radiant 1 0.5 0 750 850 Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION 950 3 2.5 2 1.5 1 0.5 0 -40 -20 0 20 40 o 80 60 40 20 0 1.2 1.6 2.0 2.4 2.8 Forward Voltage (V) FIG.2 FORWARD CURRENT VS. FORWARD VOLTAGE 5 0.8 Out Put Power To Value IF=20mA 100 Forward Current (mA) 60 Ambient Temperature TA ( C) FIG.3 RELATIVE RADIANT INTENSITY VS. VS. AMBIENT TEMPERATURE 0 10 20 Relative Radiant Intensity Out Put Power Relative To Value at IF=20mA 4 3 2 1 0 0 20 40 60 80 100 Forward Current (mA) 30 40 1.0 0.9 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG.5 RADIATION DIAGRAM 50 60 70 80 90 FIG.4 RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT Unity Opto Technology Co., Ltd 11/20/2000 |
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