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150W, 50V, 150MHz N-CHANNEL RF POWER VERTICAL MOSFET
PRELIMINARY INFORMATION
VRF150
BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS
Features
* * * * * * * 150W WITH 10dB TYPICAL GAIN @ 150MHz, 50V 150W WITH 18dB MIN GAIN @ 30MHz, 50V EXCELLENT STABILITY & LOW IMD COMMON SOURCE CONFIGURATION 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS NITRIDE PASSIVATED REFRACTORY GOLD METALLIZATION
DESCRIPTION:
The VRF150 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and intermodulation distortion.
1. DRAIN 2. SOURCE
3. GATE 4. SOURCE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C)
Symbol
V(BR)DSS VDGO VGS ID PDISS TJ T STG
Parameter
Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Power Dissipation Max Operating Junction Temperature Storage Temperature
Value
125 125 40 16 300 +200 -65 to +150
Unit
V V V A W C C
Thermal Data
Re(J-C) Thermal Resistance Junction-Case 0.6 C/W
VRF150.PDF 03-23-04
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PRELIMINARY INFORMATION
VRF150
STATIC
ELECTRICAL SPECIFICATIONS (Tcase = 25 C) 25
Symbol
Off Characteristics: V(BR)DSS VGS = 0V IDSS VGS = 0V IGSS VGS = 20V On Characteristics: VGS(Q) VDS = 10V VDS(ON) VGS = 10V GFS VDS = 10V Dynamic Characteristics: CISS VGS = 0V COSS VGS = 0V CRSS VGS = 0V
Test Conditions
IDS = 100mA VDS = 50V VDS = 0V ID = 250mA ID = 10A ID = 250mA VDS = 50V VDS = 50V VDS = 50V f = 1 MHz f = 1 MHz f = 1 MHz
Min.
125 ----1.0 1.0 5.0 -------
Value Typ.
------3.0 2.0 --480 230 40
Max.
--5.0 1.0 5.0 5.0 ---------
Unit
V mA A V V mho pF pF pF
FUNCTIONAL TESTS
Symbol
POUT GPS GPS D IMD(d3) Load Mismatch
Test Conditions
f = 150MHz VDD = 50V IDQ = 250mA f = 150MHz VDD = 50V POUT = 150WPEP IDQ = 250mA f = 30MHz f = 150MHz f1 = 30MHz VDD = 50V f = 30MHz VDD = 50V POUT = 150WPEP IDQ = 250mA VDD = 50V POUT = 150WPEP IDQ = 250mA f2=30.001MHz POUT = 150WPEP IDQ = 250mA VDD = 50V POUT = 150WPEP VDQ = 250mA 30:1 VSWR - All Phase Angles
Min.
150 ---------
Value Typ.
10 18 50 -32
Max.
-----------
Unit
W dB dB % dBc
No degradation in Output Power
VRF150.PDF 03-23-04
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PRELIMINARY INFORMATION
VRF150
TEST CIRCUIT INFORMATION
151
VRF150.PDF 03-23-04
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PRELIMINARY INFORMATION Power Out vs. Power In
VRF150
Vdd = 50V, Idq = 250mA, Freq = 175 MHz
160.00 140.00 120.00 Pout (W) 100.00 80.00 60.00 40.00 20.00 0.00 0.00
2.00
4.00
6.00
8.00 Pin (W)
10.00
12.00
14.00
16.00
Gain vs. Power Out
Vdd = 50V, Idq = 250mA, Freq = 175 MHz
12.0 11.5 11.0 Gain (dB) 10.5 10.0 9.5 9.0 8.5 8.0 0.00
20.00
40.00
60.00
80.00 Pout (W)
100.00
120.00
140.00
160.00
VRF150.PDF 03-23-04
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PRELIMINARY INFORMATION
VRF150
PACKAGE MECHANICAL DATA
VRF150.PDF 03-23-04
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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