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AOL1444 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1444 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1444 is Pb-free (meets ROHS & Sony 259 specifications). AOL1444L is a Green Product ordering option. AOL1444 and AOL1444L are electrically identical.
Features
VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4.3m (VGS = 10V) RDS(ON) < 6.3m (VGS = 4.5V)
Ultra SO-8TM Top View D
Fits SOIC8 footprint !
D
S
Bottom tab connected to drain G
G
S
Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Maximum Symbol 30 Drain-Source Voltage VDS Gate-Source Voltage VGS 20 Continuous Drain B,G Current Pulsed Drain Current Continuous Drain G Current Avalanche Current C
C
Units V V A
TC=25C
G B
85 ID IDM IDSM IAR 73 200 17 13 30 45 100 50 2.1 1.3 -55 to 175 Symbol RJA RJC Typ 19.6 48 1 Max 25 60 1.5
TC=100C TA=25C TA=70C
A A mJ W W C Units C/W C/W C/W
Repetitive avalanche energy L=0.1mH EAR TC=25C PD Power Dissipation B TC=100C TA=25C PDSM Power Dissipation A TA=70C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter t 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Case
Alpha & Omega Semiconductor, Ltd.
AOL1444
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(t ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A VDS=5V, ID=20A Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 1.45 200 1.8 3.2 4.3 4.9 85 0.7 Min 30 0.005 1 5 100 3 4.3 5.2 6.3 1 85 7000 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Coss Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Gate Drain Charge Qgd Turn-On DelayTime tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime Turn-Off Fall Time tf trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
6070 638 375 0.45 96.4 46.4 13.6 15.6 15.7 14.2 55.5 14 31 24
0.6 115 55
VGS=4.5V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s IF=20A, dI/dt=100A/s
21 21 75 21 38 29
A: The value of RJA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev0. Dec 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOL1444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 50 40 ID(A) 30 20 10 0 0 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 1 5 10V 4.5V 3.5V ID(A) VGS=3V 60 VDS=5V 50 40 125C 30 20 10 0 1 1.5 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 2 4
25C
6.0 Normalized On-Resistance 5.5 5.0 RDS(ON) (m) 4.5 4.0 3.5 3.0 2.5 2.0 0 20 40 60 80 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 14 ID=20A 12 10 RDS(ON) (m) 8 6 4 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VGS=10V VGS=4.5V
1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 125C 1.0E+00 ID=20A
VGS=4.5V VGS=10V
TC=100C TA=25C 125C
25C
IS (A)
1.0E-01 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 0.0 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 0.2 0.4 1.2
-55 to 175
Alpha & Omega Semiconductor, Ltd.
AOL1444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 8000 VDS=15V ID=20A Capacitance (pF) 7000 6000 5000 4000 3000 2000 1000 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Crss Ciss
1000 10s 100 ID (Amps) 100s Power (W) RDS(ON) limited TJ(Max)=175C TC=25C 1ms 10ms
1000 800 600 400 200 0 0.0001 0.001
TJ(Max)=175C TC=25C
10
DC
1
0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=1.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
TC=100C TA=25C
0.1 PD
-55 to 175
Ton Single Pulse T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOL1444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 ID(A), Peak Avalanche Current TA=25C 80 60 40 20 0 0.00001 120 100 80 60 40 20 0 0.0001 0.001 0.01 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B)
Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability
100 80 Current rating ID(A) 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
Power Dissipation (W)
100 80 Power (W) 60 40 20 0 0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 PD 0.01 Single Pulse 0.001 0.00001 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W 0.001 0.01 0.1 1 Ton
T
0.0001
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.

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