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TYPICAL PERFORMANCE CURVES (R)
APT60GF120JRDQ3 1200V
APT60GF120JRDQ3
FAST IGBT & FRED
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. * Low Forward Voltage Drop * RBSOA and SCSOA Rated * High Freq. Switching to 20KHz * Ultra Low Leakage Current
E G C
E
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
* Ultrafast Soft Recovery Anti-parallel Diode
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT60GF120JRDQ3 UNIT Volts
1200 30 149 79 300 300A @ 1200V 625 -55 to 150
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range
Watts
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350A) Gate Threshold Voltage (VCE = VGE, I C = 500A, Tj = 25C) MIN TYP MAX Units
1200 4.5 5.5 2.5 3.1 0.35
2
6.5 3.0
Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES
mA nA
4-2006 052-6287 Rev A
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
3.0
100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT60GF120JRDQ3
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 100A TJ = 150C, R G = 1.0, VGE = Inductive Switching (25C) VCC = 800V VGE = 15V RG = 1.0 I C = 100A VGE = 15V MIN TYP MAX UNIT pF V nC
7080 785 435 10.0 685 80 420 300 44 100 460 38 14.6 16.4 6.5 44 100 540 125 14.6 21.4 9.2 mJ
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 1200V
Turn-on Switching Energy (With Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 800V VGE = 15V RG = 1.0 I C = 100A
mJ
Turn-on Switching Energy (With Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC VIsolation WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinusoidal Package Weight
Waveform from Terminals to Mounting Base for 1 Min.)
MIN
TYP
MAX
UNIT C/W Volts
0.20 N/A 2500 1.03 29.2 10 1.1
oz gm Ib*in N*m
Torque
Maximum Terminal & Mounting Torque
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
4-2006 Rev A 052-6287
2 For Combi devices, Ices includes both IGBT and diode leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
180 160 IC, COLLECTOR CURRENT (A) 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
V
GE
= 15V
350 15V IC, COLLECTOR CURRENT (A) 300 13V 250 200 11V 150 100 50 0 12V
APT60GF120JRDQ3
TJ = -55C
TJ = 25C
TJ = 125C
10V
9V 8V
180 160 IC, COLLECTOR CURRENT (A) 140 120 100
FIGURE 1, Output Characteristics(TJ = 25C)
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 100A C T = 25C
J
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VCE = 240V VCE = 600V
TJ = -55C
80 60 40 20 0 0
8 6 4 2 0 0
VCE = 960V
TJ = 25C
TJ = 125C
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
100 200 300 400 500 600 700 800 GATE CHARGE (nC) FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
IC = 200A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
5
IC = 200A
4
3
IC = 100A IC = 50A
3
IC = 100A IC = 50A
2
2
1
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
0
8
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 250
0
0
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
200
(NORMALIZED)
150
100 4-2006 052-6287 Rev A
50
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
0 -50
60
td(ON), TURN-ON DELAY TIME (ns)
600
APT60GF120JRDQ3
50 40 30 20 10 T = 25C or 125C J 100 120 140 160 80 60 40 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 200 180 160
RG = 1.0, L = 100H, VCE = 800V VCE = 800V RG = 1.0 L = 100H
td (OFF), TURN-OFF DELAY TIME (ns)
500 400 300 200 100 0
VCE = 800V RG = 1.0 L = 100H VGE =15V,TJ=125C VGE =15V,TJ=25C
VGE = 15V
0
100 120 140 160 80 60 40 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
140 120
RG = 1.0, L = 100H, VCE = 800V
120 100 80 60 40 20 100 120 140 160 80 60 40 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 50 0
tf, FALL TIME (ns)
tr, RISE TIME (ns)
140
TJ = 25 or 125C,VGE = 15V
100 80 60 40 20 0
TJ = 125C, VGE = 15V
TJ = 25C, VGE = 15V
100 120 140 160 80 60 40 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
16
EOFF, TURN OFF ENERGY LOSS (mJ)
EON2, TURN ON ENERGY LOSS (mJ)
= 800V V CE = +15V V GE R = 1.0
G
14 12 10 8 6 4 2 0
= 800V V CE = +15V V GE R = 1.0
G
40
TJ = 125C
TJ = 125C
30
20
10
TJ = 25C
TJ = 25C
100 120 140 160 80 60 40 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
SWITCHING ENERGY LOSSES (mJ)
0
100 120 140 160 80 60 40 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
45
= 800V V CE = +15V V GE R = 1.0
G
70 60 50 40 30 20 10 0 0
J
SWITCHING ENERGY LOSSES (mJ)
= 800V V CE = +15V V GE T = 125C
Eon2,200A
40 35 30 25 20 15 10 5 0
Eon2,200A
4-2006
Eon2,100A Eoff,100A Eoff,50A
Eoff,200A
Eon2,100A
Eoff,200A
Rev A
Eon2,50A
Eoff,100A Eoff,50A
Eon2,50A
052-6287
20 15 10 5 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
TYPICAL PERFORMANCE CURVES
20,000 10,000 C, CAPACITANCE ( F) 5,000 IC, COLLECTOR CURRENT (A) Cies
350 300 250 200 150 100 50
APT60GF120JRDQ3
P
1,000 500
Coes Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
100
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.24 0.20 0.16 0.12 0.08 0.04 0
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9 0.7 0.5 0.3 0.1 0.05 10-5 10-4
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
50 FMAX, OPERATING FREQUENCY (kHz)
T = 75C
10 5
T = 125C J D = 50 % V = 800V CE R = 1.0
G
C
F
TJ (C)
0.0410 Dissipated Power (Watts) 0.0374 0.680 19.17 0.123
TC (C)
0.0358
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
ZEXT
T = 100C
C
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
20
30
052-6287
Rev A
4-2006
APT60GF120JRDQ3
APT60DQ120
10% td(on)
Gate Voltage
TJ = 125C
V CC
IC
V CE
tr 90% 10% 5%
Collector Current
Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
TJ = 125C
td(off) 90%
Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6287
Rev A
4-2006
TYPICAL PERFORMANCE CURVES
APT60GF120JRDQ3
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 85C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 60A Forward Voltage IF = 120A IF = 60A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT60GF120JRDQ3 UNIT Amps
60 73 540
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.5 3.07 1.82
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.60 ZJC, THERMAL IMPEDANCE (C/W) 0.50 0.40 0.30 0.20 0.10 0 D = 0.9
60 265 560 5 350 2890 13 150 4720 40 -
IF = 60A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 60A, diF/dt = -200A/s VR = 800V, TC = 125C
IF = 60A, diF/dt = -1000A/s VR = 800V, TC = 125C
-
0.7
0.5
Note:
PDM
0.3 0.1 0.05 10-5 10-4
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
0.148 Dissipated Power (Watts) 0.006 0.091 0.524 0.238
TC (C)
0.174
ZEXT
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6287
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Rev A
4-2006
200 trr, REVERSE RECOVERY TIME (ns) 180 IF, FORWARD CURRENT (A) 160 140 120 100 80 60 40 20 0 0 TJ = 175C TJ = 125C TJ = 25C TJ = -55C
400 350 300 250 200 150 100 50 120A
APT60GF120JRDQ3
T = 125C J V = 800V
R
60A 30A
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 7000 Qrr, REVERSE RECOVERY CHARGE (nC) 6000 5000 4000 3000 2000 1000 0 30A
T = 125C J V = 800V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 50 45 40 35 30 25 20 15 10 5 0
T = 125C J V = 800V
R
0
120A
120A
60A
60A
30A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 Qrr 0.2 0.0 trr IRRM Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 90 80 70 60 IF(AV) (A) 50 40 30 20 10
Duty cycle = 0.5 T = 175C
J
trr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 350 CJ, JUNCTION CAPACITANCE (pF) 300 250 200 150 100 50 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
052-6287
Rev A
4-2006
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10035LLL
APT60GF120JRDQ3
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
4-2006 052-6287 Rev A
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5 ,045,903 5 ,089,434 5 ,182,234 5 ,019,522
Dimensions in Millimeters and (Inches)
,503,786 5 ,256,583 4 ,748,103 5 ,283,202 5 ,231,474 5 ,434,095 5 ,528,058 and foreign patents. US and Foreign patents pending. A Rights Reserved. ll 5,262,336 6

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