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APTGF90TA60P
Triple phase leg NPT IGBT Power Module
VBUS1 VBUS2 VBUS3
VCES = 600V IC = 90A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features
*
G1
G3
G5
E1
U
E3
V
E5
W
Non Punch Through (NPT) THUNDERBOLT IGBT (R)
G2
G4
G6
E2 0/VBUS1
E4 0/VBUS2
E6 0/VBUS3
* *
VBUS 1
VBUS 2
VBUS 3
G1 0/VBUS 1 E1 E2 G2 0/VBUS 2
G3 E3 E4 G4 0/VBUS 3
G5 E5 E6 G6
U
V
W
* Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Very low (12mm) profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a phase leg of three times the current capability * Module can be configured as a three phase bridge * Module can be configured as a boost followed by a full bridge Max ratings 600 110 90 315 20 416 315A @ 600V Unit V A V W
- Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTGF90TA60P - Rev 0 September, 2004
Parameter Collector - Emitter Breakdown Voltage
APTGF90TA60P
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, IC = 100A Tj = 25C VGE = 0V VCE = 600V Tj = 125C VGE =15V IC = 90A Tj = 25C Tj = 125C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V Min 600 Typ Max 100 1000 2.0 2.2 3 2.5 5 150 Unit V A V V nA
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 300V IC = 90A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 90A RG = 5
Min
Inductive Switching (125C) VGE = 15V VBus = 400V IC = 90A RG = 5
Typ 4300 470 400 330 290 200 26 25 150 30 3.35 2.85 26 25 170 40 4.3 3.5
Max
Unit pF
nC
ns
mJ
ns
mJ
Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1
APT website - http://www.advancedpower.com
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APTGF90TA60P - Rev 0 September, 2004
APTGF90TA60P
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 70C
Min 600
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage
VR=600V
50% duty cycle
IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
60 1.6 1.9 1.4 130 170 220 920
1.8 V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.3 0.9 150 125 100 5 250
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M6
2500 -40 -40 -40 3
Package outline
5 places (3:1)
APT website - http://www.advancedpower.com
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APTGF90TA60P - Rev 0 September, 2004
APTGF90TA60P
Typical Performance Curve
Output characteristics (VGE=15V) 350 300 Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle
Ic, Collector Current (A)
300 250 200 150 100 50 0 0
Ic, Collector Current (A)
Tc=-55C Tc=25C
250 200 150 100 50 0
250s Pulse Test < 0.5% Duty cycle
Tc=-55C
Tc=25C
Tc=125C
Tc=125C
1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics
4
0
VCE, Collector to Emitter Voltage (V)
1
2
3
4
300 VGE, Gate to Emitter Voltage (V)
Gate Charge 18 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) 300 350 VCE=480V IC = 90A TJ = 25C VCE=120V VCE=300V
Ic, Collector Current (A)
250 200 150 100 50 0 0
250s Pulse Test < 0.5% Duty cycle
TJ =25C T J=125C 1 T J =-55C 10
2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 10 12 14 VGE, Gate to Emitter Voltage (V) 8 16 Ic=45A Ic=90A
TJ = 25C 250s Pulse Test < 0.5% Duty cycle
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) DC Collector Current vs Case Temperature 160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Ic=45A
250s Pulse Test < 0.5% Duty cycle VGE = 15V
Ic=180A
Ic=180A
Ic=90A
Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) Ic, DC Collector Current (A)
APT website - http://www.advancedpower.com
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APTGF90TA60P - Rev 0 September, 2004
APTGF90TA60P
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 35 250 Turn-Off Delay Time vs Collector Current
30 VGE = 15V 25 Tj = 25C VCE = 400V RG = 5 25 50 75 100 125 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 80 VCE = 400V RG = 5 150
200
VGE=15V, TJ=125C
150 VGE=15V, TJ =25C
20
100
VCE = 400V RG = 5 25 50 75
15
50 100 125 150 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
80
VCE = 400V, VGE = 15V, RG = 5
tf, Fall Time (ns)
tr, Rise Time (ns)
60
60
T J = 125C
40
VGE=15V, T J=125C
40
20
20
TJ = 25C
0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ)
8
Eon, Turn-On Energy Loss (mJ)
6 5 4 3 2 1 0
Turn-Off Energy Loss vs Collector Current
6 4 2 0 0
VCE = 400V RG = 5 TJ=125C, VGE=15V
VCE = 400V VGE = 15V RG = 5
TJ = 125C
TJ =25C, VGE=15V
TJ = 25C
25
50
75
100
125
150
0
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance
VCE = 400V VGE = 15V TJ= 125C
25 50 75 100 125 ICE, Collector to Emitter Current (A)
150
Switching Energy Losses vs Junction Temp. Switching Energy Losses (mJ)
16
Switching Energy Losses (mJ)
10
VCE = 400V
Eon, 180A
Eoff, 180A
12
8 6 4 2
VGE = 15V RG = 5
Eon, 180A
Eoff, 90A
Eoff, 180A
8
Eon, 90A Eoff, 45A
Eon, 90A Eoff, 90A Eoff, 45A Eon, 45A
4
Eon, 45A
0 0 10 20 30 40 Gate Resistance (Ohms) 50
0 0 25 50 75 100 TJ, Junction Temperature (C) 125
APT website - http://www.advancedpower.com
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APTGF90TA60P - Rev 0 September, 2004
APTGF90TA60P
Capacitance vs Collector to Emitter Voltage 10000 IC , Collector Current (A) Cies C, Capacitance (pF) 350 300 250 200 150 100 50 0 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50 0 200 400 600 800 VCE, Collector to Emitter Voltage (V) Minimum Switching Safe Operating Area
1000 Coes Cres 100
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 Single Pulse 0.0001 0.001 0.01 Rectangular Pulse Duration (Seconds) 0.1 1 0.9 0.7
0.1 0.05 0 0.00001
Fmax, Operating Frequency (kHz)
200 160 120 80 40 0
Operating Frequency vs Collector Current
VCE = 400V D = 50% RG = 5 TJ = 125C TC = 75C
ZVS
ZCS
Hard switching
20
40 60 80 100 IC , Collector Current (A)
120
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTGF90TA60P - Rev 0 September, 2004

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