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ISL9R1560S3S
Data Sheet May 2001
15A, 600V StealthTM Diode itle UF7 3P F76 D3 bA, V, 22 m, angic vel wer OSTs) tho yrds ermitor, angic vel raF wer OSThe ISL9R1560S3S is a StealthTM diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49410.
Features
* Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 * Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . . . trr < 30ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated
Applications
* Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Motor Drive FWD * SMPS FWD
Ordering Information
PART NUMBER ISL9R1560S3S PACKAGE TO-263AB BRAND R1560S3S
* Snubber Diode
Packaging
JEDEC TO-263AB
NOTE: When ordering, use the entire part number.
Symbol
K CATHODE (FLANGE)
N/C ANODE A
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
SYMBOL VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL Tpkg RJC RJA NOTES:
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
(c)2001 Fairchild Semiconductor Corporation
PARAMETER Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
ISL9R1560S3S 600 600 600 15 30 200 150 20 -55 to 175 300 260 1.0 62
UNITS V V V A A A W mJ
oC oC oC oC/W oC/W
THERMAL SPECIFICATIONS
ISL9R1560S3S REV A
ISL9R1560S3S
Electrical Specifications
SYMBOL VF IF = 15A IF = 15A, TC = 125oC IR VR = 600V VR = 600V, TC = 125oC trr IF = 1A, dIF/dt = 100A/s, VR = 30V IF = 15A, dIF/dt = 100A/s, VR = 30V trr IRRM QRR trr S IRRM QRR trr S IRRM QRR dIM/dt CJ DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%) pw = pulse width. D = Duty cycle IR = Instantaneous reverse current. trr = Reverse recovery time (ta + tb). S = Softness factor (tb / ta). IRRM = Maximum reverse recovery current. QRR = Reverse recovery charge. dIM/dt = Maximum di/dt during tb. CJ = Junction Capacitance. VR = 10V, IF = 0A IF = 15A, dIF/dt = 800A/s, VR =390V, TC = 125oC IF = 15A, dIF/dt = 200A/s, VR = 390V, TC = 125oC IF = 15A, dIF/dt = 200A/s, VR = 390V, TC = 25oC TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 1.8 1.65 25 35 29.4 3.5 57 90 2.0 5.0 275 52 1.36 13.5 390 800 62 MAX 2.2 2.0 100 1.0 30 40 A nC A/s pF A nC ns UNITS V V A mA ns ns ns A nC ns
(c)2001 Fairchild Semiconductor Corporation
ISL9R1560S3S REV A
ISL9R1560S3S Typical Performance Curves
30 IF, FORWARD CURRENT (A) 25 175oC 20 15 100oC 10 5 0 0.5 150oC 125oC 25oC IR, REVERSE CURRENT (A) 4000 1000 175oC 150oC 125oC 100oC 10 75oC
100
1 25oC
0.75
1.0
1.25
1.5
1.75
2.0
2.25
0.1 100
200
300
400
500
600
VF, FORWARD VOLTAGE (V)
VR , REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
100 VR = 390V, TJ = 125C t, RECOVERY TIMES (ns) tb AT dIF/dt = 200A/s, 500A/s, 800A/s t, RECOVERY TIMES (ns) 80
100 VR = 390V, TJ = 125C 80 tb AT IF = 30A, 15A, 7.5A
60
60
40
40
20 ta AT dIF/dt = 200A/s, 500A/s, 800A/s 0 5 10 15 20 IF, FORWARD CURRENT (A) 25 30
20 ta AT IF = 30A, 15A, 7.5A 0 0 200 400 600 800 1000 1200 1400 1600 dIF /dt, CURRENT RATE OF CHANGE (A/s)
0
FIGURE 3. ta AND tb CURVES vs FORWARD CURRENT
IRRM , MAX REVERSE RECOVERY CURRENT (A) IRRM , MAX REVERSE RECOVERY CURRENT (A)
FIGURE 4. ta AND tb CURVES vs dIF /dt
16 VR = 390V, TJ = 125C 14 12 10 8 6 4 2 0 5
dIF/dt = 800A/s
25 VR = 390V, TJ = 125C 20 IF = 15A 15 IF = 7.5A IF = 30A
dIF/dt = 500A/s
10
dIF/dt = 200A/s
5
10 15 20 IF, FORWARD CURRENT (A)
25
30
0
0
1000 1200 1400 200 400 600 800 dIF /dt, CURRENT RATE OF CHANGE (A/s)
1600
FIGURE 5. MAXIMUM REVERSE RECOVERY CURRENT vs FORWARD CURRENT
FIGURE 6. MAXIMUM REVERSE RECOVERY CURRENT vs
dIF /dt
(c)2001 Fairchild Semiconductor Corporation
ISL9R1560S3S REV A
ISL9R1560S3S Typical Performance Curves
S, REVERSE RECOVERY SOFTNESS FACTOR 2.5 IF = 30A IF = 15A 2.0 VR = 390V, TJ = 125C
(Continued)
QRR, REVERSE RECOVERY CHARGE (nC) 700
VR = 390V, TJ = 125C IF = 30A
600
500 IF = 15A 400
1.5 IF = 7.5A 1.0
300
IF = 7.5A
0.5
200
0
200
400
600
800
1000
1200
1400
1600
0
200
400
600
800
1000
1200
1400
1600
dIF /dt, CURRENT RATE OF CHANGE (A/s)
dIF /dt, CURRENT RATE OF CHANGE (A/s)
FIGURE 7. REVERSE RECOVERY SOFTNESS FACTOR vs dIF /dt
1200 CJ , JUNCTION CAPACITANCE (pF) 1000 800 600
FIGURE 8. REVERSE RECOVERY CHARGE vs dIF/dt
400 200
0
0.1
1
10
100
VR , REVERSE VOLTAGE (V)
FIGURE 9. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
1.0 THERMAL IMPEDANCE ZJA, NORMALIZED
DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.1
t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z JA x RJA + TA 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101
0.01 10-5
10-4
FIGURE 10. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
(c)2001 Fairchild Semiconductor Corporation
ISL9R1560S3S REV A
ISL9R1560S3S Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L
DUT RG VGE t1 t2
CURRENT SENSE + VDD 0
IF
dIF dt ta
trr tb
MOS IRF840
-
0.25 IRM IRM
FIGURE 11. trr TEST CIRCUIT
I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD
FIGURE 12. trr WAVEFORMS AND DEFINITIONS
VAVL
IL IV
IL
-
t0
t1
t2
t
FIGURE 13. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 14. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
(c)2001 Fairchild Semiconductor Corporation
ISL9R1560S3S REV A
ISL9R1560S3S TO-263AB
H1 TERM. 4 D
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
E A A1
INCHES SYMBOL A A1 b b1 MIN 0.170 0.048 0.030 0.045 0.310 0.018 0.405 0.395 MAX 0.180 0.052 0.034 0.055 0.022 0.425 0.405
MILLIMETERS MIN 4.32 1.22 0.77 1.15 7.88 0.46 10.29 10.04 MAX 4.57 1.32 0.86 1.39 0.55 10.79 10.28 NOTES 4, 5 4, 5 4, 5 2 4, 5 7 7 4, 6 3 2
L2 L1 1 3
b2 c D E e c
J1 0.450 (11.43)
L
b e e1
TERM. 4
b1
0.100 TYP 0.200 BSC 0.045 0.095 0.175 0.090 0.050 0.315 0.055 0.105 0.195 0.110 0.070 -
2.54 TYP 5.08 BSC 1.15 2.42 4.45 2.29 1.27 8.01 1.39 2.66 4.95 2.79 1.77 -
e1 H1 J1 L L1
L3
b2
0.700 (17.78)
0.350 (8.89)
L2 L3
3
1 0.080 TYP (2.03) 0.062 TYP (1.58)
0.150 (3.81)
MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS
NOTES: 1. These dimensions are within allowable dimensions of Rev. C of JEDEC TO-263AB outline dated 2-92. 2. L3 and b2 dimensions established a minimum mounting surface for terminal 4. 3. Solder finish uncontrolled in this area. 4. Dimension (without solder). 5. Add typically 0.002 inches (0.05mm) for solder plating. 6. L1 is the terminal length for soldering. 7. Position of lead to be measured 0.120 inches (3.05mm) from bottom of dimension D. 8. Controlling dimension: Inch. 9. Revision 11 dated 5-99.
1.5mm DIA. HOLE
4.0mm USER DIRECTION OF FEED 2.0mm 1.75mm C L
TO-263AB
24mm TAPE AND REEL
24mm
16mm
COVER TAPE
40mm MIN. ACCESS HOLE 30.4mm
13mm 330mm 100mm
GENERAL INFORMATION 1. 800 PIECES PER REEL. 2. ORDER IN MULTIPLES OF FULL REELS ONLY. 3. MEETS EIA-481 REVISION "A" SPECIFICATIONS. 24.4mm
(c)2001 Fairchild Semiconductor Corporation
ISL9R1560S3S REV A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnsignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
OPTOPLANARTM PACMANTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER(R) SMART STARTTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H2

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