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| Preliminary Specification NPN SiGe RF POWER TRANSISTOR SOT223 THN6701B Unit in mm Applications - UHF and VHF wide band amplifier 6.5 3.0 4 Features - High power gain MAG = 15 dB @ VCE = 6 V, IC = 400 mA, f = 465 MHz - High power POUT = 35 dBm(3W) @ VCE = 6 V, ICQ = 50 mA, f = 465 MHz 1 2.3 0.7 4.6 3.5 7.0 2 3 PIN CONFIGURATION 1. Base 2. Emitter 3. Collector 4. Emitter Absolute Maximum Ratings (TA = 25 ) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 17 12 1.5 1 4.5 150 -65 ~ 150 Unit V V V A W http://www.tachyonics.co.kr Sept. 2005. Page 1 of 6 Rev. 1.0 Preliminary Specification Thermal Characteristics Symbol Rth j-a Parameter Thermal Resistance from Junction to Ambient THN6701B Value 27 Unit K/W Electrical Characteristics (TA = 25 ) Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance IEBO hFE Cre Test Conditions VCB = 15 V, IE = 0 mA VCE = 11 V, IB = 0 mA VEB = 1.0 V, IC = 0 mA VCE = 6 V, IC = 200 mA VCB = 6 V, IE = 0 mA, f = 1 MHz Min. 40 Typ. 6.2 Max. 1.0 5.0 1.0 300 pF Unit hFE Classification Marking hFE Value R6701 40 - 200 R6701* 170 - 300 http://www.tachyonics.co.kr Sept. 2005. Page 2 of 6 Rev. 1.0 Preliminary Specification Typical Characteristics ( TA = 25, unless otherwise specified) Collector Current vs. Base to Emitter Voltage Reverse Transfer Capacitance, Cre (pF) THN6701B Reverse Transfer Capacitance vs. Collector to Base Voltage 10.0 9.5 9.0 8.5 8.0 7.5 7.0 6.5 6.0 5.5 5.0 0 2 4 6 8 10 500 Collector Current, IC (mA) VCE = 6 V 400 300 200 100 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage, VBE (V) Collector to Base Voltage, VCB (V) DC Current Gain vs. Collector Current 150 VCE = 6 V Collector Current vs. Collector to Emitter Voltage 0.9 0.8 Collector Current, IC (A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 IB step = 2 mA 125 DC Current Gain, hFE 100 75 50 25 0 -3 10 10 -2 10 -1 10 0 0 1 2 3 4 5 6 7 8 Collector Current, IC (A) Collector to Emitter Voltage, V CE (V) http://www.tachyonics.co.kr Sept. 2005. Page 3 of 6 Rev. 1.0 Preliminary Specification Application Information RF performance at TS 60 in common emitter configuration Operation Mode CW, class-AB f (MHz) 465 VCE (V) 6 POUT (dBm) 35 THN6701B GP (dB) 10 C (%) 60 Output Power or Power Gain vs. Input Power 40 f = 465 MHz, VCC = 6 V, ICQ = 50 mA Collector Current or Collector Efficiency vs. Input Power 18 16 Power Gain, GP (dB) 1.6 1.4 Collector Current, IC (A) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 15 20 25 IC C 80 f = 465 MHz, VCC = 6 V, ICQ = 50 mA Output Power, POUT (dBm) 30 25 20 15 10 GP POUT 60 50 40 30 20 10 0 30 14 12 10 8 6 30 0 5 10 15 20 25 Input Power, PIN (dBm) Input Power, PIN (dBm) http://www.tachyonics.co.kr Sept. 2005. Page 4 of 6 Rev. 1.0 Collector Efficiency, C (%) 35 70 Preliminary Specification Evaluation Board (for FRS at 465 MHz) THN6701B Part C8 C5 C4 L1 C1 C2 C3 C7 L2 C6 Value 100 pF (1608, Murata) 10 pF (1608, Murata) 18 pF (1608, Murata) 1 nF (1608, Murata) 15pF (1608, Murata) 100 nH (1608, Murata) 0.4 X 1.5 X 6T (Air Coil) C1, C4 C7, C9 C2 C3 C9 C5,C8 C6 L1 L2 FR4 glass epoxy: dielectric constant = 4.5, thickness = 0.8 mm Evaluation board dimension = 119 50 mm2 Test condition: CW test, VCC = 6.0 V, ICQ = 50 mA, f = 465 MHz Test Circuit Schematic Diagram VBB 100 pF 1 nF VCC 1 nF 100 pF 1 nH L2 0.5 X 1.5 X 6T W=1.3 mm L=11 mm W=1.3 mm 100 pF L=39 mm OUTPUT INPUT 100 pF W=1.3 mm L=36 mm W=1.3 mm L=2.8 mm W=1.3 mm L=1.8 mm 15 pF 10 pF 18 pF http://www.tachyonics.co.kr Sept. 2005. Page 5 of 6 Rev. 1.0 Preliminary Specification Package Dimensions Unit : mm 0.95 0.85 THN6701B S seating plane 6.7 6.3 0.32 0.24 3.1 2.9 4 16 max 16 10 max 1.8 max 1 2.3 4.6 2 0.8 0.6 3 Sept. 2005. 3.7 3.3 7.3 6.7 http://www.tachyonics.co.kr 0.10 0.01 Page 6 of 6 Rev. 1.0 |
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