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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
L E B
BSS63
EPITAXIAL PLANAR PNP TRANSISTOR
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
A G
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg
RATING -110 -100 -6 -100 100 200 150 -65 150
UNIT V V V mA mA mW
2
3
1
P
P
DIM A B C D E G H J K L M N P
MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
C
N
H
M
1. EMITTER 2. BASE 3. COLLECTOR
K
SOT-23
Marking
J
D
Lot No.
Type Name
T6
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance
)
TEST CONDITION IC=-10mA, IB=0 IC=-10 A, IE=0 IE=-10 A, IC=0 VCB=-90V, IE=0 VCB=-90V, IE=0, Ta=150 VEB=-5V, IC=0 VCE=-1V, IC=-10mA VCE=-1V, IC=-25mA IC=-25mA, IB=-2.5mA IC=-25mA, IB=-2.5mA IC=-75mA, IB=-7.5mA IC=-25mA, VCE=-5V, f=100MHz VCB=-10V, IE=0, f=1MHz MIN. -100 -110 -6 30 30 50 TYP. 3 MAX. -100 -50 -200 -0.9 -0.25 -0.9 V V MHz pF UNIT V V V nA A nA
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE VBE(sat) VCE(sat) fT Cob
1998. 6. 15
Revision No : 1
1/1

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