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MICROWAVE CORPORATION
HMC278MS8G
V01.1200
100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz
FEBRUARY 2001
Features
P1dB OUTPUT POWER: + 20 dBm
General Description
The HMC278MS8G is a 100mW GaAs MMIC medium power amplifier covering 1.7 to 3 GHz. The device is packaged in a low cost, surface mount 8 lead MSOP plastic package with an exposed base paddle for improved RF ground and thermal dissipation. The self-biased amplifier provides 21 dB of gain and +20 dBm P1dB output power while operating from a single positive supply of Vdd= +5V @ 130 mA. At Vdd = +3V the gain is 19 dB with a P1dB of +16dBm. With RF I/Os matched to 50, external component requirements are minimal. At a height of 0.040" (1.0mm), the MSOP8 package is ideal for low profile portable wireless devices. Use the HMC278MS8G with the HMC309MS8 integrated LNA/TxRx switch front-end for BLUETOOTH Class I, HomeRF, 802.11 WLAN, and ISM 2.4 GHz radios.
1
AMPLIFIERS SMT
SINGLE SUPPLY: +3V to +5V ULTRA SMALL 8 LEAD MSOP PACKAGE IDEAL FOR PCS/3G, MMDS, HomeRF, & BLUETOOTH
Guaranteed Performance,
Parameter Min. Frequency Range Gain Gain Flatness ( Over Any 200 MHz BW) Input Return Loss Output Return Loss Reverse Isolation Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Voltage (Vdd) Supply Current (Idd) 4.75 5 6 46 14 16 26 15
As a Function of Vdd, -40 to +85 deg C
Vdd= +5V Max. Min. Typ. 2.3 - 2.5 25 16 21 0.5 7 7 48 17 19 29 10 10 52 20 22 32 6 5.25 165 4.75 5.0 130 5.25 165 2.75 7 7 48 13 15 28 25 15 Max. Min. Vdd= +3V Units Typ. Typ. 2.3 - 2.5 19 0.5 10 10 52 16 18 32 6 3.0 125 3.25 140 23 Max. GHz dB dB dB dB dB dBm dBm dBm dB Vdc mA
Vdd= +5V
1.7 - 3.0 20 0.7 10 10 52 19 21 32 6 5.0 130
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 36
HMC278MS8G
MICROWAVE CORPORATION
100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz
V01.1200
FEBRUARY 2001
Broadband Gain & Return Loss @ Vdd = +5V
25 20 15 RESPONSE (dB)
S11 S21 S22
P1dB vs. Vdd Bias
25 23 21 19 P1dB (dBm)
1
AMPLIFIERS
2.5 FREQUENCY (GHz) 3 3.5 2.5 FREQUENCY (GHz) 3 3.5
@ Vdd= +3V @ Vdd= +5V
10 5 0 -5 -10 -15 -20 1 1.5 2 2.5
17 15 13 11 9 7 5 1.5 2
Vdd=+5V Vdd=+3V
3
3.5
4
4.5
5
FREQUENCY (GHz)
Gain vs. Temperature @ Vdd= +5V
24 22 20 Gain (dB) 18 16 14 12 10 1.5
+25C +85C -40C
Gain vs. Temperature @ Vdd= +3V
24 22 20 Gain (dB) 18 16 14 12 10 1.5
+25C +85C -40C
2
2.5 FREQUENCY (GHz)
3
3.5
2
Input & Output Return Loss vs Vdd Bias
0
Reverse Isolation vs Vdd Bias
0 -10
RETURN LOSS (dB)
-5 ISOLATION (dB)
-20 -30 -40 -50 -60 -70 1.5
-10
-15
S11 @ Vdd=+5V S22 @ Vdd=+5V S11 @ Vdd=+3V S22 @ Vdd=+3V
-20 1.5
2
2.5 FREQUENCY (GHz)
3
3.5
2
2.5 FREQUENCY (GHz)
3
3.5
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 37
SMT
HMC278MS8G
MICROWAVE CORPORATION
100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz
FEBRUARY 2001
V01.1200
Power Compression @ 2.0 GHz Vdd= +5V
24 Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 2.5 GHz Vdd= +5V
24 Pout (dBm), GAIN (dB), PAE (%) 22 20 18 16 14 12 10 8 6 4 2 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2
Pout (dBm) Gain (dB) PAE (%)
1
AMPLIFIERS
22 20 18 16 14 12 10 8 6 4 2 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2
Pout (dBm) Gain (dB) PAE (%)
SMT
4
6
8 10
4
6
8 10
INPUT POWER (dBm)
INPUT POWER (dBm)
Psat vs. Temperature @ Vdd= +5V
25 23 21 19 Psat (dBm) 17 15 13 11 9 7 5 1.5 2 2.5 FREQUENCY (GHz) 3 3.5
+25C +85C -40C
P1dB vs. Temperature @ Vdd= +5V
25 23 21 OUTPUT P1dB (dBm) 19 17 15 13 11 9 7 5 1.5 2 2.5 FREQUENCY (GHz) 3 3.5
+25C +85C -40C
Output IP3 vs. Temperature @ Vdd= +5V
Frequency (GHz) Temperature -40 C +25 C +85 C
All levels in dBm
o o o
2.0 32.7 32.5 32.7
2.5 32.4 31.9 31.4
3.0 29.4 29.1 28.5
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 38
HMC278MS8G
MICROWAVE CORPORATION
100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz
V01.1200
FEBRUARY 2001
Power Compression @ 2.0 GHz Vdd= +3V
24 Pout (dBm), GAIN (dB), PAE (%) 22 20 18 16 14 12 10 8 6 4 2 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0
Pout (dBm) Gain (dB) PAE (%)
Power Compression @ 2.5 GHz Vdd= +3V
24 Pout (dBm), GAIN (dB), PAE (%) 22 20 18 16 14 12 10 8 6 4 2 8 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0
Pout (dBm) Gain (dB) PAE (%)
1
AMPLIFIERS
3.5
INPUT POWER (dBm)
FREQUENCY (GHz)
Psat vs. Temperature @ Vdd= +3V
25 23 21 19 Psat (dBm) 17 15 13 11 9 7 5 1.5 2 2.5 FREQUENCY (GHz) 3 3.5
+25C +85C -40C
P1dB vs. Temperature @ Vdd= +3V
25 23 21 OUTPUT P1dB (dBm) 19 17 15 13 11 9 7 5 1.5 2 2.5 FREQUENCY (GHz) 3
+25C +85C -40C
Output IP3 vs. Temperature @ Vdd= +3V
Frequency (GHz) Temperature -40 C +25 C +85 C
All levels in dBm
o o o
2.0 27.8 27.7 27.3
2.5 27.8 27.5 26.9
3.0 25.7 25.5 24.6
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 39
SMT
2
4
6
2
4
6
8
HMC278MS8G
MICROWAVE CORPORATION
100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz
FEBRUARY 2001
V01.1200
Schematic
VDD GND OUT GND
Absolute Maximum Ratings
Supply Voltage (Vdd) Channel Temperature (Tc) +8 Vdc 175 oC 65 oC/W -65 to +150 oC -55 to +85 oC Input Power (RFin)(Vdd = +5V) +10 dBm Thermal Resistance ( jc) (Channel Backside) Storage Temperature Operating Temperature
1
AMPLIFIERS
EXPOSED PADDLE GROUND
PIN 1
SMT
GND
GND
IN
GND
Note: 100pF bypass capacitor to ground on Vdd line recommended.
Outline
1.
2. 3.
MATERIAL: A) PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC. B) LEADFRAME & PADDLE MATERIAL: COPPER ALLOY PLATING : LEAD & PADDLE- TIN SOLDER PLATE DIMENSIONS ARE IN INCHES (MILLIMETERS). UNLESS OTHERWISE SPECIFIED ALL TOL. ARE 0.005(0.13).
4. 5.
DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15 MM PER SIDE DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25 MM PER SIDE
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
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HMC278MS8G
MICROWAVE CORPORATION
100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz
V01.1200
FEBRUARY 2001
Recommended PCB Layout for HMC278MS8G 1
AMPLIFIERS
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown above. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board as shown is available from Hittite upon request.
Evaluation Circuit Board Layout Design Details
Layout Technique Material Dielectric Thickness 50 Ohm Line Width Gap to Ground Edge Ground VIA Hole Diameter Connectors Grounded Co-Planar Waveguide (GCPW) Rogers 4350 0.020" (0.51 mm) 0.034" (0.86 mm) 0.010" (0.25 mm) 0.014" (0.36 mm) SMA-F ( EF - Johnson P/N 142-0701-806)
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 41
SMT

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