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| SI3812DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.125 @ VGS = 4.5 V 0.200 @ VGS = 2.5 V ID (A) "2.4 "1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.48 V @ 0.5 A IF (A) 0.5 D K TSOP-6 Top View A 1 6 K G 3 mm S 2 5 N/C G 3 4 D 2.85 mm S N-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a _ Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71069 S-03510--Rev. D, 16-Apr-01 www.vishay.com TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg PD TA = 25_C TA = 85_C Symbol VDS VKA VGS ID IDM IS IF IFM 5 sec 20 20 "12 "2.4 "1.7 "8 1.05 0.5 8 1.15 0.59 1.0 0.52 Steady State Unit V "12 "2.0 "1.4 A 0.75 0.5 8 0.83 0.53 0.76 0.48 -55 to 150 _C W 1 SI3812DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta t v 5 sec Device MOSFET Schottky MOSFET Symbol Typical 93 103 Maximum 110 125 150 165 90 95 Unit RthJA 130 140 75 Junction-to-Ambienta Steady State Schottky MOSFET RthJF _C/W _ Junction-to-Foot (MOSFET Drain, Schottky Kathode) Steady State Schottky 80 Notes a. Surface Mounted on 1" x1" FR4 Board. MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current (MOSFET + Schottky) On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 2.4 A VGS = 2.5 V, ID = 1.0 A VDS = 5 V, ID = 2.4 A IS = 1.5 A, VGS = 0 V 5 0.100 0.160 5 0.79 1.1 0.125 0.200 W S V 0.6 "100 1 10 V nA mA m A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 3.0 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 2.4 A 2.1 0.3 0.4 10 30 14 6 30 17 50 25 12 50 ns 4.0 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 0.5 IF = 0.5, TJ = 125_C Vr = 20 Min Typ 0.42 0.33 0.002 0.06 1.5 31 Max 0.48 Unit V 0.4 0.100 1 10 pF mA Maximum Reverse Leakage Current Irm Vr = 20, TJ = 75_C Vr = 20, TJ = 125_C Junction Capacitance CT Vr = 10 V www.vishay.com 2 Document Number: 71069 S-03510--Rev. D, 16-Apr-01 SI3812DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 4.5 thru 3.5 V 8 I D - Drain Current (A) 3V I D - Drain Current (A) 8 25_C 6 2.5 V 4 6 125_C 10 TC = -55_C MOSFET Transfer Characteristics 4 2 2V 2 1.5 V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.5 300 Capacitance r DS(on) - On-Resistance ( W ) 0.4 C - Capacitance (pF) 250 Ciss 200 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 0.1 150 100 Coss 50 Crss 0.0 0 1 2 3 4 5 6 7 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 4.5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 2.4 A 1.8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.4 A r DS(on) - On-Resistance (W) (Normalized) 1.0 1.5 2.0 2.5 3.6 1.6 1.4 2.7 1.2 1.8 1.0 0.9 0.8 0.0 0.0 0.5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71069 S-03510--Rev. D, 16-Apr-01 www.vishay.com 3 SI3812DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.40 ID = 2.4 A r DS(on)- On-Resistance ( W ) 0.32 ID = 1 A 0.24 MOSFET On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 1 0.16 TJ = 25_C 0.08 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0.00 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 0.2 V GS(th) Variance (V) 6 8 Single Pulse Power, Junction-to-Ambient -0.0 Power (W) 4 -0.2 2 -0.4 -0.6 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71069 S-03510--Rev. D, 16-Apr-01 SI3812DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 MOSFET Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 10 I R - Reverse Current (mA) 5 SCHOTTKY Forward Voltage Drop I F - Forward Current (A) 1 TJ = 150_C 1 0.1 20 V 0.01 10 V TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 0.1 0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (_C) VF - Forward Voltage Drop (V) 150 Capacitance CT - Junction Capacitance (pF) 120 90 60 30 0 0 4 8 12 16 20 VKA - Reverse Voltage (V Document Number: 71069 S-03510--Rev. D, 16-Apr-01 www.vishay.com 5 SI3812DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 140_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 6 Document Number: 71069 S-03510--Rev. D, 16-Apr-01 |
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