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BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS
Copyright (c) 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with BDW54, BDW54A, BDW54B, BDW54C and BDW54D 40 W at 25C Case Temperature
B
TO-220 PACKAGE (TOP VIEW)
q q q
1 2 3
4 A Continuous Collector Current Minimum hFE of 750 at 3 V, 1.5 A
C E
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25C case temperature (unless otherwise noted)
RATING BDW53 BDW53A Collector-base voltage (IE = 0) BDW53B BDW53C BDW53D BDW53 BDW53A Collector-emitter voltage (IB = 0) (see Note 1) BDW53B BDW53C BDW53D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V EBO IC IB Ptot Ptot 1/2LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 4 50 40 2 25 -65 to +150 -65 to +150 -65 to +150 V A mA W W mJ C C C V V UNIT
These values apply when the base-emitter diode is open circuited. Derate linearly to 150C case temperature at the rate of 0.32 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, R BE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
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BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS BDW53 V (BR)CEO Collector-emitter breakdown voltage BDW53A IC = 30 mA IB = 0 (see Note 5) BDW53B BDW53C BDW53D VCE = 30 V ICEO Collector-emitter cut-off current V CE = 30 V V CE = 40 V V CE = 50 V V CE = 60 V VCB = 45 V V CB = 60 V V CB = 80 V V CB = 100 V ICBO Collector cut-off current V CB = 120 V V CB = 45 V V CB = 60 V V CB = 80 V V CB = 100 V V CB = 120 V IEBO hFE VBE(on) VCE(sat) VEC Emitter cut-off current Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode forward voltage VEB = VCE = V CE = VCE = IB = IB = IE = 5V 3V 3V 3V 30 mA 40 mA 4A IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 1.5 A IC = 4A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 100 2.5 2.5 4 3.5 V V V TC = 150C TC = 150C TC = 150C TC = 150C TC = 150C BDW53 BDW53A BDW53B BDW53C BDW53D BDW53 BDW53A BDW53B BDW53C BDW53D BDW53 BDW53A BDW53B BDW53C BDW53D MIN 45 60 80 100 120 0.5 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 0.2 5 5 5 5 5 2 20000 mA mA mA V TYP MAX UNIT
IC = 1.5 A IC = 1.5 A IC = IB = 0 4A
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 3.125 62.5 UNIT C/W C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER ton toff
TEST CONDITIONS IC = 2 A V BE(off) = -5 V IB(on) = 8 mA RL = 15
MIN IB(off) = -8 mA tp = 20 s, dc 2%
TYP 1 4.5
MAX
UNIT s s
Turn-on time Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
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BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 20000 10000 hFE - Typical DC Current Gain
TCS110AD
COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
2*0 tp = 300 s, duty cycle < 2% IB = IC / 100 1*5
TCS110AB
TC = -40C TC = 25C TC = 100C
1*0
1000
0*5 TC = -40C TC = 25C TC = 100C 0 0*5 1*0 IC - Collector Current - A 5*0
VCE = 3 V t p = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 5*0
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C
TCS110AC
2*5
2*0
1*5
1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 IC - Collector Current - A 5*0
Figure 3.
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INFORMATION
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BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
10
SAS110AC
IC - Collector Current - A
1*0
0*1 BDW53 BDW53A BDW53B BDW53C BDW53D 0.01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
60 Ptot - Maximum Power Dissipation - W
TIS110AB
50
40
30
20
10
0 0 25 50 75 100 125 150 TC - Case Temperature - C
Figure 5.
PRODUCT
INFORMATION
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BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
o
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
PRODUCT
INFORMATION
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BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1997, Power Innovations Limited
PRODUCT
INFORMATION
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