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EDI8L32256C
256Kx32 SRAM Module
256Kx32, 5V Static Ram
Features
256Kx32 bit CMOS Static DSP Memory Solution * Texas Instruments TMS320C3x, TMS320C4x * Analog SHARCTM DSP * Motorola DSP96002 Random Access Memory Array * Fast Access Times: 15, 17, 20 and 25ns * Individual Byte Enables * User Configurable Organization with Minimal Additional Logic * Master Output Enable and Write Control * TTL Compatible Inputs and Outputs * Fully Static, No Clocks Surface Mount Package * 68 Lead PLCC, No. 99, JEDEC MO-47AE * Small Footprint, 0.990 Sq. In. * Multiple Ground Pins for Maximum Noise Immunity Single +5V (5%) Supply Operation The EDI8L32256C is a high speed, 5V, 8 megabit SRAM. The device is available with access times of 15, 17, 20 and 25ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to create a single chip external data memory solution for Texas Instruments' TMS320C30/31, TMS 320C32 or TMS320C4x, Motorola's DSP96002 and Analog Device's SHARCTM DSP. Alternatively the device's chip enables can be used to configure it as a 512Kx16. A 512Kx48 program memory array for Analog's SHARCTM DSP is created using three devices. If this memory is too deep, two 256Kx24s (EDI8L24256C) can be used to create a 256Kx48 array or two 128Kx24s (EDI8L24128C) can be used to create a 128Kx48 array. The device provides a 32% space savings when compared to two monolithic 256Kx16, 44 pin SOJs. The device provides a memory upgrade of the EDI8L32128C (128Kx32) and the EDI8L3265C (64Kx32). For more memory the device can be upgraded to the EDI8L32512C (512Kx32).
NOTE: Solder Reflow temperature should not exceed 260C for 10 seconds.
Pin Configurations and Block Diagram
DQ16 NC A17 BS3\ BS2\ BS1\ BSO\ E1\ VCC NC EO\ G\ W\ A16 A15 A14 DQ15
Pin Names
60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 DQ14 DQ13 DQ12 VSS DQ11 DQ10 DQ9 DQ8 VCC DQ7 DQ6 DQ5 DQ4 VSS DQ3 DQ2 DQ1
DQ17 DQ18 DQ19 VSS DQ20 DQ21 DQ22 DQ23 VCC DQ24 DQ25 DQ26 DQ27 VSS DQ28 DQ29 DQ30
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
AO-A17 EO-E1 BSO-BS3 W G DQO-DQ31 VCC VSS NC
AO-A17 G W EO E1 BSO BS1 BS2 BS3
Address Inputs Chip Enables (One per Word) Byte Selects (One per Byte) Master Write Enable Master Output Enable Common Data Input/Output Power (+5V5%) Ground No Connection
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
18
Note: For memory upgrade information refer to page 8, Figure 8 "EDI MCM-L upgrade path".
DQ31 A6 A5 A4 A3 A2 A1 AO VCC A13 A12 A11 A10 A9 A8 A7 DQO
256Kx32 Memory Ary ra
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
DQO-DQ7 DQ8-DQ15 DQ16-DQ23 DQ24-DQ31
Electronic Designs Incorporated * One Research Drive * Westborough, MA 01581USA * 508-366-5151 * FAX 508-836-4850 * http://www.electronic-designs.com 1 EDI8L32256C Rev. 4 3/98 ECO#9662
Absolute Maximum Ratings*
Voltage on any pin relative to VSS Operating Temperature TA (Ambient) Commercial Industrial Storage Temperature Power Dissipation Output Current. Junction Temperature, TJ -0.5V to 7.0V 0C to + 70C -40C to +85C -55C to +125C 3.1 Watts 20 mA 175C
Recommended DC Operating Conditions
Parameter Sym Supply Voltage VCC Supply Voltage VSS Input High Voltage VIH Input Low Voltage VIL Min 4.75 0 2.2 -0.3 Typ Max Units 5.0 5.25 V 0 0 V -- VCC+0.5 V -0.8 V
AC Test Conditions
Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels Output Load
(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)
Figure 1 VCC Figure 2 VCC
*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
VSS to 3.0V 5ns 1.5V Figure 1
480 Q 255 30 pF Q 255
480
5 pF
DC Electrical Characteristics
Parameter Operating Power Supply Current Standby (TTL) Supply Current Full StandbySupply Current Sym ICC1 ICC2 ICC3 Conditions W= VIL, II/O = 0mA, Min Cycle E VIH, VIN VIL or VIN VIH, f=OMHz E VCC-0.2V VIN VCC-0.2V or VIN 0.2V VIN = 0V to VCC V I/O = 0V to VCC IOH = -4.0mA IOL = 8.0mA Min Max 15/17 575 120 20 Units 20/25 480 120 20 mA mA mA
Input Leakage Current Output Leakage Current Output High Volltage Output Low Voltage
ILI ILO VOH VOL
10 10 2.4 0.4
A A V V
Truth Table
EWG HXX LHH LXX LHL LLX
X Means Don't Care
Capacitance
BSO-3 Mode X Standby X Output Disable H Output Disable L Read L Write Output High Z High Z High Z DOUT DIN Power ICC2,ICC3, ICC1 ICC1 ICC1 ICC1
(f=1.0MHz, VIN=VCC or VSS)
Parameter Address Lines Data Lines Write & Output Enable Lines Chip Enable Lines/Byte Select Sym CA CD/Q W, G E, BS Max 20 10 6 9 Unit pF pF pF pF
EDI8L32256C
256Kx32 SRAM Module
2 EDI8L32256C Rev. 4 3/98 ECO#9662
EDI8L32256C
256Kx32 SRAM Module
AC Characteristics Read Cycle
Parameter Read Cycle Time Address Access Time Chip Enable Access Time Byte Select Access Time Chip Enable to Output in Low Z (1) Byte Select to Output in Low Z Chip Disable to Output in High Z (1) Byte Select to Output in High Z Output Hold from Address Change Output Enable to Output Valid Output Enable to Output in Low Z (1) Output Disable to Output in High Z(1) Symbol JEDEC Alt. TAVAV TRC TAVQV TAA TELQV TACS TBLQX TBLZ TELQX TCLZ TBLQX TBLZ TEHQZ TCHZ TBHQZ TBHZ TAVQX TOH TGLQV TOE TGLQX TOLZ TGHQZ TOHZ 15ns 17ns 20ns 25ns Min Max Min Max Min Max Min Max 15 17 20 25 15 17 20 25 15 17 20 25 15 17 20 25 3 3 3 3 3 3 3 3 8 8 10 10 8 8 10 10 3 3 3 3 6 8 10 10 2 2 2 2 5 6 8 10 Units ns ns ns ns ns ns ns ns ns ns ns ns
Read Cycle 1 - W High, G, E Low
TAVAV A ADDRESS 1 TAVQV Q ADDRESS 2 TAVQX DATA 1 DATA 2
Read Cycle 2 - W High
TAVAV A
TAVQV TELQV TELQX
BSx,E
TEHQZ
G TGLQV TGLQX Q TGHQZ
3 EDI8L32256C Rev. 4 3/98 ECO#9662
AC Characteristics Write Cycle
Symbol JEDEC Alt. TAVAV TWC TELWH TCW TELEH TCW TBLWH TBW TAVWL TAS TAVEL TAS TAVWH TAW TAVEH TAW TWLWH TWP TWLEH TWP TWHAX TWR TEHAX TWR TWHDX TDH TEHDX TDH TWLQZ TWHZ TDVWH TDW TDVEH TDW TWHQX TWLZ 15ns 17ns 20ns 25ns Min Max Min Max Min Max Min Max Units 15 17 20 25 ns 9 10 15 20 ns 9 10 15 20 ns 9 10 15 20 ns 0 0 0 0 ns 0 0 0 0 ns 10 12 15 15 ns 10 12 15 15 ns 10 12 15 15 ns 10 12 15 15 ns 0 0 0 0 ns 0 0 0 0 ns 0 0 0 0 ns 0 0 0 0 ns 0 6 0 7 0 7 0 10 ns 6 8 8 12 ns 6 8 8 12 ns 2 2 2 2 ns
Parameter Write Cycle Time Chip Enable to End of Write Byte Select to End of Write Address Setup Time Address Valid to End of Write Write Pulse Width Write Recovery Time Data Hold Time Write to Output in High Z (1) Data to Write Time Output Active from End of Write (1)
Note 1: Parameter guaranteed, but not tested.
Write Cycle 1 - W Controlled
TAVAV A
BSx,E
TELWH TAVWH W TAVWL D TWLQZ Q HIGH Z TWLWH TDVWH DATA VALID TWHQX TWHDX TWHAX
EDI8L32256C
256Kx32 SRAM Module
4 EDI8L32256C Rev. 4 3/98 ECO#9662
EDI8L32256C
256Kx32 SRAM Module
Write Cycle 2 - E Controlled
TAVAV A TAVEL TELEH TAVEH TWLEH W TDVEH D Q HIGH Z DATA VALID TEHDX TEHAX
BSx, E
Ordering Information
Commercial (0C to 70C) Part Number EDI8L32256C15AC EDI8L32256C17AC EDI8L32256C20AC EDI8L32256C25AC Speed (ns) 15 17 20 25 Package No. 99 99 99 99 Industrial (-40C to +85C) Part Number EDI8L32256C17AI EDI8L32256C20AI EDI8L32256C25AI Speed (ns) 17 20 25 Package No. 99 99 99
Package Description Package No. 99 68 Lead PLCC JEDEC MO-47AE
0.995 Max 0.956 Max
Weight = 4.2g Theta JA = 40C/W Theta JC = 15C/W
0.995 Max
0.956 Max
0.180 Max
0.040 Max
0.020 0.015
0.930 0.890
0.050 BSC
0.115 Max
Electronic Designs Incorporated * One Research Drive * Westborough, MA 01581USA * 508-366-5151 * FAX 508-836-4850 * http://www.electronic-designs.com Electronic Designs Inc. reserves the right to change specifications without notice. CAGE No. 66301 5 EDI8L32256C Rev. 4 3/98 ECO#9662

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