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| SI4854DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.026 @ VGS = 10 V 0.030 @ VGS = 4.5 V 0.041 @ VGS = 2.5 V ID (A) 6.9 6.4 5.5 FEATURES D LITTLE FOOT Plust--Dual TrenchFETr Power MOSFET Plus Integrated Schottky Diode D PWM Optimized for Faster Swtiching SCHOTTKY PRODUCT SUMMARY VDS (V) 30 APPLICATIONS IF (A) 2.0 VSD (V) Diode Forward Voltage 0.50 V @ 1.0 A D DC/DC Conversion for 3- to 6-A Output Current - Notebook - Desktop D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "12 6.9 Steady State Unit V 5.1 4.1 30 A 0.9 1.1 0.7 -55 to 150 W _C ID IDM IS PD TJ, Tstg 5.5 1.7 2.0 1.3 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS MOSFET Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71444 S-03476--Rev. A, 16-Apr-01 www.vishay.com Steady-State Steady-State RthJA RthJC Schottky Typ 53 93 35 Symbol Typ 52 93 35 Max 62.5 110 40 Max 62.5 110 40 Unit _C/W C/W 1 SI4854DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 85_C _ On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 6.9 A Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb rDS(on) gfs VSD VGS = 4.5 V, ID = 6.4 A VGS = 2.5 V, ID = 5.5 A VDS = 15 V, ID = 6.9 A IS = 1 A, VGS = 0 V Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 0.021 0.024 0.034 22 0.7 0.47 1.2 0.5 V 0.026 0.030 0.041 S W 0.6 "100 1 100 15 2000 A mA m V nA Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms m Ch-1 Ch-2 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 15 V, VGS = 4.5 V, ID = 6.9 A 9 2.1 2.6 20 20 35 10 40 32 30 30 55 20 80 70 ns 14 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 100_C Vr = -30 V, TJ = 125_C Vr = 10 V Min Typ 0.47 0.36 0.004 0.7 3.0 50 Max 0.50 0.42 0.100 10 20 Unit V Maximum Reverse Leakage Current Irm mA Junction Capacitance CT pF www.vishay.com 2 Document Number: 71444 S-03476--Rev. A, 16-Apr-01 SI4854DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 3 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Vishay Siliconix MOSFET Transfer Characteristics 18 18 12 2V 6 12 TC = 125_C 6 25_C -55_C 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.075 r DS(on) - On-Resistance ( W ) 1500 Capacitance C - Capacitance (pF) 0.060 1200 Ciss 900 0.045 VGS = 2.5 V VGS = 4.5 V 0.030 600 0.015 VGS = 10 V 300 Crss Coss 0.000 0 6 12 18 24 30 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 6.9 A 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 6.9 A r DS(on) - On-Resistance (W) (Normalized) 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 4 8 12 16 20 Qg - Total Gate Charge (nC) Document Number: 71444 S-03476--Rev. A, 16-Apr-01 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 SI4854DY Vishay Siliconix New Product MOSFET On-Resistance vs. Gate-to-Source Voltage 0.10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.08 ID = 6.9 A I S - Source Current (A) 0.06 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 50 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA -0.0 Power (W) 40 30 -0.2 20 -0.4 10 -0.6 -0.8 -50 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 93_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 4 Document Number: 71444 S-03476--Rev. A, 16-Apr-01 SI4854DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix MOSFET 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 20 10 I R - Reverse Current (mA) SCHOTTKY Forward Voltage Drop 10 TJ = 150_C Reverse Current vs. Junction Temperature 1 0.1 30 V 24 V I F - Forward Current (A) TJ = 25_C 0.01 0.001 0.0001 0 25 50 75 100 125 150 TJ - Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF - Forward Voltage Drop (V) Capacitance 200 160 C - Capacitance (pF) 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Document Number: 71444 S-03476--Rev. A, 16-Apr-01 www.vishay.com 5 |
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