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| H V SC AV ER O M A I S IO P L L A N IA BL S N T E TISP4070L3AJ THRU TISP4395L3AJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS *R o TISP4xxxL3AJ Overvoltage Protector Series SMA (DO-214AC) Package 25% Smaller Placement Area than SMB Ion-Implanted Breakdown Region Precise and Stable Voltage R (B) 1 Device `4070 `4080 `4090 `4125 `4145 `4165 `4180 `4220 `4240 `4260 `4290 `4320 `4350 `4360 `4395 VDRM V 58 65 70 100 120 135 145 160 180 200 230 240 275 290 320 V(BO) V 70 80 90 125 145 165 180 220 240 260 290 320 350 360 395 SD4XAA MDXXCCE SMAJ Package (Top View) 2 T (A) Device Symbol T R Terminals T and R correspond to the alternative line designators of A and B ............................................ UL Recognized Components Rated for International Surge Wave Shapes Wave Shape 2/10 s 8/20 s 10/160 s 10/700 s 10/560 s 10/1000 s Standard GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K.20/21/45 FCC Part 68 GR-1089-CORE ITSP A 125 100 65 50 40 30 How To Order For Standard Termination Finish Order As TISP4xxxL3AJR For Lead Free Termination Finish Order As TISP4xxxL3AJR-S Device TISP 4xxxL3AJ Package SMA (DO-214AC) Carrier Embossed Tape Reel Pack Insert xxx value corresponding to protection voltages of 070, 080, 090, etc. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex JULY 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series Description These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. The TISP4xxxL3 range consists of fifteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are in an SMAJ (JEDEC DO-214AC with J-bend leads) plastic package. These devices are supplied in embossed tape reel carrier pack. For alternative voltage and holding current values, consult the factory. For higher rated impulse currents, the 50 A 10/1000 TISP4xxxM3AJ series in SMA and the 100 A 10/1000 TISP4xxxH3BJ series in SMB are available. Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted) Rating `4070 `4080 `4090 `4125 `4145 `4165 `4180 `4220 `4240 `4260 `4290 `4320 `4350 `4360 `4395 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 5/310 s (ITU-T K.20/21/45, K.44 10/700 s voltage wave shape) 5/310 s (FTZ R12, 10/700 s voltage wave shape) 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 4) 20 ms (50 Hz) full sine wave 1 s (50 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Symbol Value 58 65 70 100 120 135 145 160 180 200 230 240 275 290 320 125 100 65 50 50 40 30 18 7 1.6 Unit Repetitive peak off-state voltage, (see Note 1) VDRM V ITSP A ITSM A Junction temperature TJ -40 to +150 C Storage temperature range Tstg -65 to +150 C NOTES: 1. For voltage values at lower temperatures, derate at 0.13 %/C. 2. Initially, the TISP4xxxL3 must be in thermal equilibrium with TJ = 25 C. 3. The surge may be repeated after the TISP4xxxL3 returns to its initial conditions. 4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Derate current values at -0.61 %/C for ambient temperatures above 25 C. JULY 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series Recommended Operating Conditions Component series resistor for FCC Part 68, 10/560 type A surge survival series resistor for FCC Part 68, 9/720 type B surge survival RS series resistor for GR-1089-CORE first-level and second-level surge survival series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector Min 12 0 23 0 7 Typ Max Unit Electrical Characteristics, TA = 25 C (Unless Otherwise Noted) Parameter Repetitive peak offstate current Test Conditions VD = VDRM TA = 25 C TA = 85 C `4070 `4080 `4090 `4125 `4145 `4165 `4180 V(BO) Breakover voltage dv/dt = 250 V/ms, R SOURCE = 300 `4220 `4240 `4260 `4290 `4320 `4350 `4360 `4395 I(BO) IH dv/dt Breakover current Holding current Critical rate of rise of off-state voltage dv/dt = 250 V/ms, R SOURCE = 300 0.15 5 I T = 5 A, di/dt = +/-30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85V DRM `4070, VD = 52 V `4080, VD = 59 V `4090, VD = 63 V `4125, VD = 90 V `4145, VD = 108 V `4165, VD = 122 V `4180, VD = 131 V ID Off-state current `4220, VD = 144 V `4240, VD = 162 V `4260, VD = 180 V `4290, VD = 207 V `4320, VD = 216 V `4350, VD = 248 V `4360, VD = 261 V `4395, VD = 288 V ID Off-state current VD = 50 V 10 A 2 A Min Typ Max 5 10 70 80 90 125 145 165 180 220 240 260 290 320 350 360 395 0.8 0.60 A A kV/s V Unit A IDRM JULY 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series Electrical Characteristics, TA = 25 C (Unless Otherwise Noted) (Continued) Parameter Test Conditions f = 1 MHz, Vd = 1 V rms, VD = 1 V 4070 thru `4090 `4125 thru `4220 `4240 thru `4395 `4070 thru `4090 `4125 thru `4220 `4240 thru `4395 Min Typ 53 40 33 25 18 14 Max 64 48 40 30 22 17 Unit Coff Off-state capacitance f = 1 MHz, Vd = 1 V rms, VD = 50 V pF Thermal Characteristics Parameter Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 C, (see Note 75) 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 C 52 Min Typ Max 115 C/W Unit RJA Junction to free air thermal resistance NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. JULY 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series Parameter Measurement Information +i ITSP Quadrant I Switching Characteristic ITSM IT VT IH V(BO) I(BO) -v IDRM V DRM VD ID ID VD VDRM IDRM +v I(BO) IH V(BO) VT IT ITSM I Quadrant III Switching Characteristic ITSP -i PMXXAAB Figure 1. Voltage-Current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal JULY 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE 10 VD = 50 V Normalized Breakover Voltage 1.10 TC4LAG 1.15 NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4LAF |ID| - Off-State Current - A 1 1.05 0*1 1.00 0*01 0.95 0*001 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150 0.90 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C Figure 2. Figure 3. ON-STATE CURRENT vs ON-STATE VOLTAGE 50 40 30 20 15 10 7 5 4 3 2 1.5 1 0.7 0.5 0.7 '4070 THRU '4090 '4240 THRU '4395 1 '4125 THRU '4220 1.5 2 3 45 VT - On-State Voltage - V TA = 25 C tW = 100 s TC4MAM 2.0 NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4LAD 1.5 Normalized Holding Current IT - On-State Current - A 1.0 0.9 0.8 0.7 0.6 0.5 0.4 7 10 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150 Figure 4. Figure 5. JULY 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series Typical Characteristics NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE TC4LABC 1 0.9 0.8 Capacitance Normalized to VD = 0 0.7 0.6 0.5 0.4 '4070 THRU '4090 TJ = 25 C Vd = 1 Vrms DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE TCLAEB 30 C - Differential Off-State Capacitance - pF 25 C = Coff(-2 V) - Coff(-50 V) 20 '4125 THRU '4220 0.3 '4240 THRU '4395 15 0.2 0.5 1 2 3 5 10 20 30 VD - Off-state Voltage - V 50 100150 10 50 Figure 6. 60 70 80 90100 150 200 250 300 350 VDRM - Repetitive Peak Off-State Voltage - V Figure 7. |Coff(+VD) - C off(-VD) | -- Capacitance Asymmetry -- pF 1 TYPICAL CAPACITANCE ASYMMETRY vs TC4LBB OFF-STATE VOLTAGE Vd = 10 mV rms,1 MHz Vd = 1 Vrm s, 1 MHz 0 1 2 3 45 7 10 20 30 40 50 VD -- Off-state Voltage - V Figure JULY 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 6. TISP4xxxL3AJ Overvoltage Protector Series Rating and Thermal Information NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION ITSM(t) - Non-Repetitive Peak On-State Current - A 20 15 TI4LAI VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE 1.00 TI4LADB Derating Factor 10 9 8 7 6 5 4 3 VGEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB T = 25 C A 0.99 0.98 '4070 THRU '4090 0.97 0.96 '4125 THRU '4220 0.95 2 1.5 0.01 0.94 '4240 THRU '4395 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0.1 1 t - Current Duration - s 10 100 0 5 10 15 20 25 Figure 9. TAMIN - Minimum Ambient Temperature - C Figure 10. JULY 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series MECHANICAL DATA Recommended Printed Wiring Land Pattern Dimensions SMA Land Pattern 2.34 (. 092) 1.90 (.075) 2.16 (.085) MILLIMETERS DIMENSIONS ARE: (INCHES) MDXX BIC Device Symbolization Code Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified. Device TISP4070L3 TISP4080L3 TISP4090L3 TISP4125L3 TISP4145L3 TISP4165L3 TISP4180L3 TISP4220L3 TISP4240L3 TISP4260L3 TISP4290L3 TISP4320L3 TISP4350L3 TISP4360L3 TISP4395L3 Symbolization Code 4070L 4080L 4090L 4125L 4145L 4165L 4180L 4220L 4240L 4260L 4290L 4320L 4350L 4360L 4395L Carrier Information For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape. Carrier Embossed Tape Reel Pack Standard Quantity 5,000 JULY 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series MECHANICAL DATA SMAJ (DO-214AC) Plastic Surface Mount Diode Package This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SMA 4.06 - 4.57 (.160 - .180) 2.29 - 2.92 (.090 - .115) 2 Index Mark (if needed) 2.00 - 2.40 (.079 - .095) 0.76 - 1.52 (.030 - .060) 1.58 - 2.16 (.062 - .085) 4.83 - 5.59 (.190 - .220) 0.10 - 0.20 (.004 - .008) 1.27 - 1.63 (.050 - .064) DIMENSIONS ARE: MILLIMETERS (INCHES) MDXXCAA JULY 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxL3AJ Overvoltage Protector Series MECHANICAL DATA Tape Dimensions SMA Package Single-Sprocket Tape 3.90 - 4.10 (.154 - .161) 1.95 - 2.05 (.077 - .081) 1.55 - 1.65 (.061 - .065) 1.65 - 1.85 (.065 - .073) 0.40 MAX. (.016) 5.45 - 5.55 (.215 - .219) 11.70 - 12.30 (.461 - .484) 8.20 MAX. (.323) 3.90 - 4.10 (.154 - .161) Direction of Feed 1.5 MIN. (.059) Carrier Tape Embossment 20 0 MIN. Cover Tape 4.50 MAX. (.177) Maximum component rotation Index Mark (If needed) Typical component cavity center line Typical component center line DIMENSIONS ARE: MILLIMETERS (INCHES) NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in) MAX. so that the component cannot rotate more than 20 within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions: Reel diameter: 330 mm 3.0 mm (12.99 in .12 in) Reel hub diameter: 75 mm (2.95 in) MIN. Reel axial hole: 13.0 mm 0.5 mm (.51 in .02 in) C. 5000 devices per reel. MDXXCGA "TISP" is a trademark of Bourns, Ltd., a Bourns Company and Registered in U.S. Patent and Trademark Office. JULY 2000 - REVISED FEBRUARY 2005 "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. |
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