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| DTA114EM3T5G Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT-723 package which is designed for low power surface mount applications. http://onsemi.com PNP SILICON DIGITAL TRANSISTORS * * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-723 Package can be Soldered using Wave or Reflow. Available in 4 mm, 8000 Unit Tape & Reel These are Pb-Free Devices PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc 3 MARKING DIAGRAM XX M 2 1 SOT-723 CASE 631AA Style 1 xx M = Specific Device Code (See Marking Table on page 2) = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2004 1 February, 2004 - Rev. 0 Publication Order Number: DTA114EM3/D DTA114EM3T5G Series ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES Device DTA114EM3T5G DTA124EM3T5G* DTA144EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G* DTA123EM3T5G* DTA143EM3T5G* DTA143ZM3T5G* DTA124XM3T5G DTA123JM3T5G* DTA115EM3T5G DTA144WM3T5G* Marking 6A 6B 6C 6D 6E 6F 6H 6J 6K 6L 6M 6N 6P R1 (K) 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 R2 (K) 10 22 47 47 2.2 4.7 47 47 47 100 22 Package Shipping SOT-723 (Pb-Free) 8000/Tape & Reel *Available upon request For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (Note 1.) @ TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation, FR-4 Board (Note 2.) @ TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 Inch Pad Symbol PD 260 2.0 RqJA PD 600 4.8 RqJA TJ, Tstg 205 -55 to +150 mW mW/C C/W C 480 mW mW/C C/W Max Unit http://onsemi.com 2 DTA114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) DTA114EM3T5G DTA124EM3T5G DTA144EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA115EM3T5G DTA144WM3T5G ICBO ICEO IEBO - - - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 - - nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3.) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS (Note 3.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTA114EM3T5G DTA124EM3T5G DTA144EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA115EM3T5G DTA144WM3T5G hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 - 60 100 140 140 250 250 15 27 140 130 140 150 140 - - - - - - - - - - - - - - 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) DTA123EM3T5G (IC = 10 mA, IB = 1 mA) DTA114TM3T5G/DTA143TM3T5G/ DTA143ZM3T5G/DTA124XM3T5G/DTA143EM3T5G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) DTA114EM3T5G DTA124EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA144EM3T5G DTA115EM3T5G DTA144WM3T5G VCE(sat) VOL - - - - - - - - - - - - - VOH 4.9 - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) DTA114TM3T5G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% Vdc http://onsemi.com 3 DTA114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Input Resistor DTA114EM3T5G DTA124EM3T5G DTA144EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA115EM3T5G DTA144WM3T5G DTA114EM3T5G/DTA124EM3T5G/DTA144EM3T5G DTA115EM3T5G DTA114YM3T5G DTA114TM3T5G/DTA143TM3T5G DTA123EM3T5G/DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA144WM3T5G 300 250 200 150 100 50 0 -50 RqJA = 480C/W Symbol R1 Min 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 Typ 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 Max 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 Unit kW Resistor Ratio / R1/R2 PD , POWER DISSIPATION (MILLIWATTS) 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve http://onsemi.com 4 DTA114EM3T5G Series TYPICAL ELECTRICAL CHARACTERISTICS - DTA114EM3T5G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = -25C 0.1 75C 25C TA = 75C 100 25C -25C 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25C 100 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 0.001 0 1 2 VO = 5 V 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 DTA114EM3T5G Series TYPICAL ELECTRICAL CHARACTERISTICS - DTA124EM3T5G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V 1 TA = -25C 25C TA = 75C 100 25C -25C 75C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 75C 10 25C TA = -25C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 10 75C 25C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 DTA114EM3T5G Series TYPICAL ELECTRICAL CHARACTERISTICS - DTA144EM3T5G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) TA = 75C 25C 100 -25C TA = -25C 0.1 75C 25C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 f = 1 MHz lE = 0 V TA = 25C 100 10 1 0.1 0.01 VO = 5 V 0 1 2 TA = 75C 25C -25C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) 0.001 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 DTA114EM3T5G Series TYPICAL ELECTRICAL CHARACTERISTICS - DTA114YM3T5G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25C -25C TA = 75C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25C TA = -25C +12 V 75C 1 Typical Application for PNP BRTs LOAD 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 0.1 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 8 DTA114EM3T5G Series TYPICAL ELECTRICAL CHARACTERISTICS -- DTA115EM3T5G 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1000 75C TA = -25C 25C 100 0.1 -25C 25C 75C 10 IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.01 Figure 23. Maximum Collector Voltage versus Collector Current Figure 24. DC Current Gain 1.2 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 1.0 0.8 0.6 0.4 0.2 0 f = 1 MHz IE = 0 V TA = 25C 100 25C 10 TA = -25C 75C 1 VO = 5 V 0.1 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 Vin, INPUT VOLTAGE (VOLTS) Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) 25C 10 TA = -25C 1 75C 0 2 VO = 0.2 V 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 20 Figure 27. Input Voltage versus Output Current http://onsemi.com 9 DTA114EM3T5G Series TYPICAL ELECTRICAL CHARACTERISTICS -- DTA144WM3T5G 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1000 75C TA = -25C 25C TA = -25C 75C 0.1 100 25C IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0.01 Figure 28. Maximum Collector Voltage versus Collector Current Figure 29. DC Current Gain 1.4 Cob, CAPACITANCE (pF) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 25C TA = -25C 1 0.1 0.01 VO = 5 V 0.001 0 1 2 3 4 5 6 7 8 9 10 11 Vin, INPUT VOLTAGE (VOLTS) Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 TA = -25C 75C 1 25C 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 32. Input Voltage versus Output Current http://onsemi.com 10 DTA114EM3T5G Series PACKAGE DIMENSIONS SOT-723 CASE 631AA-01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. -X- D b1 -Y- 3 A E 1 2 L C HE e b 2X 0.08 (0.0032) X Y STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.20 0.27 0.25 0.3 0.35 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches SOT-723 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 DTA114EM3T5G Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 12 DTA114EM3/D |
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