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FDH45N50F 500V N-Channel MOSFET, FRFET
May 2006
FDH45N50F
500V N-Channel MOSFET, FRFET Features
* 45A, 500V, RDS(on) = 0.12 @VGS = 10 V * Low gate charge ( typical 105 nC) * Low Crss ( typical 62 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GD S
TO-247
FDH Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDH45N50F
500 45 28.4 180 30 1868 45 62.5 50 625 5 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min.
-0.24 --
Max.
0.2 -40
Unit
C/W C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
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FDH45N50F Rev. B
FDH45N50F 500V N-Channel MOSFET, FRFET
Package Marking and Ordering Information
Device Marking
FDH45N50F
Device
FDH45N50F
Package
TO-247
TC = 25C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 500V, VGS = 0V VDS = 400V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 22.5A VDS = 40V, ID = 22.5A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
500 -----3.0 ----------(Note 4, 5)
Typ.
-0.5 -----0.105 49.0 5100 790 62 161 342 140 500 215 245 105 33 45
Max Units
--25 250 100 -100 5.0 0.12 -6630 1030 ---290 1010 440 500 137 --V V/C A A nA nA V S pF pF pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
VDS = 400V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 250V, ID = 48A RG = 25
Switching Characteristics
-----
VDS = 400V, ID = 48A VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 45A VGS = 0V, IS = 45A dIF/dt =100A/s
(Note 4)
------
---188 0.64
45 180 1.4 ---
A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.46mH, IAS = 48A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 45A, di/dt 1,200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDH45N50F Rev. B
2
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FDH45N50F 500V N-Channel MOSFET, FRFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS
Figure 2. Transfer Characteristics
10
2
10
2
ID, Drain Current [A]
ID, Drain Current [A]
15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
Top :
10
1
150 C
10
1
o
25 C
o
-55 C
o
10
0
Notes : 1. 250s Pulse Test o 2. TC = 25 C
-1
Notes : 1. VDS = 40V 2. 250s Pulse Test
10
10
0
10
1
10
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
0.30 10
2
RDS(ON) [], Drain-Source On-Resistance
0.20
VGS = 10V
0.15
IDR, Reverse Drain Current [A]
0.25
10
1
150 C
o
25 C
o
0.10
VGS = 20V
0.05
Note : TJ = 25 C
o
Notes : 1. VGS = 0V 2. 250s Pulse Test
0.00
0
20
40
60
80
100
120
140
160
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
12000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd
Figure 6. Gate Charge Characteristics
12
VDS = 100V
VGS, Gate-Source Voltage [V]
10000
Coss Ciss
Crss = Cgd
10
VDS = 250V VDS = 400V
Capacitances [pF]
8000
8
6000
6
4000
2000
Crss
Note : 1. VGS = 0 V 2. f = 1 MHz
4
2
Note : ID = 48A
0 -1 10
0
10
0
10
1
0
20
40
60
80
100
120
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDH45N50F Rev. B
3
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FDH45N50F 500V N-Channel MOSFET, FRFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
2.5
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
2.0
1.1
1.5
1.0
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
Notes : 1. VGS = 10 V 2. ID = 22.5 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
50
10 s
10
2
100 s
40
ID, Drain Current [A]
10
1
Operation in This Area is Limited by R DS(on)
10 ms 100 ms DC
ID, Drain Current [A]
10
3
1 ms
30
20
10
0
Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
10
-1
10
0
10
1
10
2
0 25
50
75
100
o
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Figure 11. Typical Drain Current Slope vs. Gate Resistance
4,000 3,500 3,000 2,500
Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C
o
Figure 12. Typical Drain-Source Voltage Slope vs. Gate Resistance
45 40 35 30
Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C
o
di/dt [A/S]
dv/dt [V/nS]
di/dt(on)
2,000 1,500 1,000 500 0
25 20 15 10 5 0
dv/dt(on)
dv/dt(off)
di/dt(off)
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
40
45
50
RG, Gate resistance []
RG, Gate resistance []
FDH45N50F Rev. B
4
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FDH45N50F 500V N-Channel MOSFET, FRFET
Typical Performance Characteristics (Continued)
Figure 13. Typical Switching Losses vs. Gate Resistance
1,000
Figure 14. Unclamped Inductive Switching Capability
100
Notes : 1. If R = 0 tAV = (L)(IAS)/(1.3 Rated BVDSS - VDD) 2. If R 0 tAV = (L/R)In[(IAS x R)/(1.3 Rated BVDSS - VDD)+1]
800
Eoff
600
IAS, Avalanche Current [A]
Energy [J]
Eon
400
Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C
o
10
Starting TJ = 150 C
o
Starting TJ = 25 C
o
200
0
0
5
10
15
20
25
30
35
40
45
50
1 0.01
0.1
1
10
100
RG, Gate resistance []
tAV, Time In Avalanche [ms]
Figure 15. Transient Thermal Resistance Curve
10
-1
D=0.5 0.2 0.1 0.05
ZJC(t), Thermal Response
Notes : 1. Z JC (t) = 0.2 C/W Max. 2. Duty Factor, D=t1 /t2 3. T JM - T C = P DM * Z JC(t)
o
10
-2
0.02 0.01 single pulse
PDM t1 t2
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1, Square W ave Pulse Duration [sec]
FDH45N50F Rev. B
5
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FDH45N50F 500V N-Channel MOSFET, FRFET
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
FDH45N50F Rev. B
6
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FDH45N50F 500V N-Channel MOSFET, FRFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
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Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER
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PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM
SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I19
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
7 FDH45N50F Rev. B
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