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PD - 95316 IRFL1006PBF HEXFET(R) Power MOSFET Surface Mount Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. D VDSS = 60V RDS(on) = 0.22 G S ID = 1.6A SOT-223 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy * Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 2.3 1.6 1.3 6.4 2.1 1.0 8.3 20 54 1.6 0.1 5.0 -55 to + 150 Units A W W mW/C V mJ A mJ V/ns C Thermal Resistance Parameter RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)** Typ. 90 50 Max. 120 60 Units C/W * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 05/26/04 IRFL1006PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 60 --- --- V VGS = 0V, ID = 250A --- 0.057 --- V/C Reference to 25C, ID = 1mA --- --- 0.22 VGS = 10V, ID = 1.6A 2.0 --- 4.0 V VDS = VGS, ID = 250A 3.0 --- --- S VDS = 25V, ID = 1.6A --- --- 25 VDS = 60V, VGS = 0V A --- --- 250 VDS = 48V, VGS = 0V, TJ = 125C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V --- --- 8.0 ID = 1.6A --- --- 1.7 nC VDS = 48V --- --- 3.3 VGS = 10V, See Fig. 6 and 9 --- 7.4 --- VDD = 30V --- 18 --- ID = 1.6A ns --- 18 --- RG = 49 --- 17 --- RD = 19, See Fig. 10 --- 160 --- VGS = 0V --- 55 --- pF VDS = 25V --- 19 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol --- --- 1.6 showing the A integral reverse --- --- 6.4 p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 1.6A, VGS = 0V --- 31 47 ns TJ = 25C, I F = 1.6A --- 46 68 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 42 mH RG = 25, IAS = 1.6A. (See Figure 12) ISD 1.6A, di/dt 260A/s, VDD V (BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. 2 www.irf.com IRFL1006PBF 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 1 4.5V 4.5V 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.5 TJ = 25 C TJ = 150 C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 1.6A I D , Drain-to-Source Current (A) 2.0 1.5 1 1.0 0.5 0.1 4.0 V DS = 25V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFL1006PBF 300 VGS , Gate-to-Source Voltage (V) 240 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 1.6A VDS = 48V VDS = 30V VDS = 12V 16 C, Capacitance (pF) 180 Ciss 12 120 Coss 8 60 4 Crss 0 1 10 100 0 0 2 4 FOR TEST CIRCUIT SEE FIGURE 13 6 8 10 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) TJ = 150 C 10 1 100us TJ = 25 C 1 1ms 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 0.1 1 TC = 25 C TJ = 150 C Single Pulse 10 10ms 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFL1006PBF 2.0 VDS VGS RD ID , Drain Current (A) 1.5 D.U.T. + RG - VDD 1.0 10V Pulse Width 1 s Duty Factor 0.1 % 0.5 Fig 10a. Switching Time Test Circuit VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 PDM t1 t2 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFL1006PBF EAS , Single Pulse Avalanche Energy (mJ) 140 120 100 80 60 40 20 0 15V ID 0.72A 1.0A BOTTOM 1.6A TOP VDS L DRIVER RG 20V D.U.T IAS tp + V - DD A 0.01 Fig 12a. Unclamped Inductive Test Circuit 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFL1006PBF Peak Diode Recovery dv/dt Test Circuit D.U.T + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + + - RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFL1006PBF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING THIS IS AN IRFL014 PART NUMBER INTERNATIONAL RECTIFIER LOGO LOT CODE AXXXX FL014 314P A = ASSEMBLY SITE DATE CODE CODE (YYWW) YY = YEAR WW = WEEK P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) TOP BOTTOM 8 www.irf.com IRFL1006PBF SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 4.10 (.161) 3.90 (.154) 0.35 (.013) 0.25 (.010) 1.85 (.072) 1.65 (.065) TR 2.05 (.080) 1.95 (.077) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 16.30 (.641) 15.70 (.619) 2.30 (.090) 2.10 (.083) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4 330.00 (13.000) MAX. 50.00 (1.969) MIN. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 14.40 (.566) 12.40 (.488) 18.40 (.724) MAX. 4 3 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/04 www.irf.com 9 |
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